Continuous-Wave, Room-Temperature Operation of 2-μm Sb-Based Optically-Pumped Vertical-External-Cavity Surface-Emitting Laser Monolithically Grown on GaAs Substrates
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概要
- 論文の詳細を見る
- Japan Society of Applied Physicsの論文
- 2009-11-25
著者
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Senanayake Pradeep
California Nanosystems Institute And Electrical Engineering Department University Of California Los
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Koch Stephan
アリゾナ大学 光科学カレッジ
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ROTTER Thomas
California NanoSystems Institute and Electrical Engineering Department, University of California, Lo
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TATEBAYASHI Jun
California NanoSystems Institute and Electrical Engineering Department, University of California, Lo
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BALAKRISHNAN Ganesh
Center for High Technology Materials, University of New Mexico
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RATTUNDE Marcel
Fraunhofer-Institut fur Angewandte Festkorperphysik
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WAGNER Joachim
Fraunhofer-Institut fur Angewandte Festkorperphysik
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HADER Jorg
College of Optical Sciences, University of Arizona
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MOLONEY Jerome
College of Optical Sciences, University of Arizona
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KOCH Stephan
Physics Department, University of Marburg
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DAWSON L.
Center for High Technology Materials, University of New Mexico
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HUFFAKER Diana
California NanoSystems Institute and Electrical Engineering Department, University of California, Lo
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HADER Jorg
アリゾナ大学 光科学カレッジ
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MOLONEY Jerome
アリゾナ大学 光科学カレッジ
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Balakrishnan Ganesh
Center For High Technology Materials University Of New Mexico
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Tatebayashi Jun
California Nanosystems Institute And Electrical Engineering Department University Of California Los
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Rotter Thomas
California Nanosystems Institute And Electrical Engineering Department University Of California Los
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Dawson L.
Center For High Technology Materials University Of New Mexico
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Huffaker Diana
California Nanosystems Institute And Electrical Engineering Department University Of California Los
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Wagner Joachim
Fraunhofer‐inst. Angewandte Festkoerperphysik Freiburg Deu
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Wagner Joachim
Fraunhofer Institute for Applied Solid State Physics IAF, Tullastrasse 72, D-79108 Freiburg, Germany
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WAGNER Joachim
Fraunhofer Institute for Applied Solid State Physics IAF
関連論文
- 外部共振器型面発光半導体レーザー : 光励起半導体レーザー
- Continuous-Wave, Room-Temperature Operation of 2-μm Sb-Based Optically-Pumped Vertical-External-Cavity Surface-Emitting Laser Monolithically Grown on GaAs Substrates
- Nucleation, Relaxation and Redistribution of Si Layers in GaAs
- Monolithic, Defect-Free III-V on Si using Self-Assembled AlSb Quantum Dot Nucleation
- AlGaN-Based 355nm UV Light-Emitting Diodes with High Power Efficiency
- High Power Efficiency AlGaN-Based Ultraviolet Light-Emitting Diodes
- Impact of Band Structure and Absorber Dynamics on Self-Q-Switching in GaN-Based Multisection Laser Diodes at High Reverse Bias
- Experimental Determination of the Dominant Type of Auger Recombination in InGaN Quantum Wells
- Experimental Determination of the Dominant Type of Auger Recombination in InGaN Quantum Wells
- Impact of Band Structure and Absorber Dynamics on Self-Q-Switching in GaN-Based Multisection Laser Diodes at High Reverse Bias