Monolithic, Defect-Free III-V on Si using Self-Assembled AlSb Quantum Dot Nucleation
スポンサーリンク
概要
- 論文の詳細を見る
- 2004-09-15
著者
-
HUANG S.
Center for Intelligent Structures of Chongqing University
-
DAWSON L.
Center for High Technology Materials, University of New Mexico
-
Dawson L.
Center For High Technology Materials University Of New Mexico
-
Xin Y.-c.
Center For High Technology Materials University Of New Mexico
-
HUFFAKER D.
Center for High Technology Materials, University of New Mexico
-
BALAKRISHNAN G.
Center for High Technology Materials, University of New Mexico
-
CONLIN P.
Center for High Technology Materials, University of New Mexico
-
Conlin P.
Center For High Technology Materials University Of New Mexico
-
Balakrishnan G.
Center For High Technology Materials University Of New Mexico
-
Huffaker D.
Center For High Technology Materials University Of New Mexico
関連論文
- Study on design methodology of magneto-rheological fluid Shock absorbers employing Eyring constitutive model
- Continuous-Wave, Room-Temperature Operation of 2-μm Sb-Based Optically-Pumped Vertical-External-Cavity Surface-Emitting Laser Monolithically Grown on GaAs Substrates
- High Temperature Operation (>100℃) of InGaAs/GaAs All-Active Monolithic Passively-Mode-Locked Single Quantum Well Lasers
- Novel Quantum Dot 3-section Super-luminescent Diode
- Monolithic, Defect-Free III-V on Si using Self-Assembled AlSb Quantum Dot Nucleation