AlGaN-Based 355nm UV Light-Emitting Diodes with High Power Efficiency
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概要
- 論文の詳細を見る
- Japan Society of Applied Physicsの論文
- 2012-03-25
著者
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Kohler Klaus
Fraunhofe-institut Fur Angewandte Festkorperphysik
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WAGNER Joachim
Fraunhofer-Institut fur Angewandte Festkorperphysik
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Scholz Ferdinand
Institute Of Optoelectronics Ulm University
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Gutt Richard
Fraunhofer-institut Fur Angewandte Festkorperphysik
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PASSOW Thorsten
Fraunhofer-Institut fur Angewandte Festkorperphysik
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KUNZER Michael
Fraunhofer-Institut fur Angewandte Festkorperphysik
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PLETSCHEN Wilfried
Fraunhofer-Institut fur Angewandte Festkorperphysik
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KIRSTE Lutz
Fraunhofer-Institut fur Angewandte Festkorperphysik
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FORGHANI Kamran
Institut fur Optoelektronik, Universitat Ulm
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Forghani Kamran
Institut Fur Optoelektronik Universitat Ulm
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Scholz Ferdinand
Institut Fur Optoelektronik Universitat Ulm
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Pletschen Wilfried
Fraunhofer Institute for Applied Solid-State Physics (IAF), Tullastrasse 72, 79108 Freiburg, Germany
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Scholz Ferdinand
Institut für Optoelektronik, Universität Ulm, 89069 Ulm, Germany
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Wagner Joachim
Fraunhofer Institute for Applied Solid State Physics IAF, Tullastrasse 72, D-79108 Freiburg, Germany
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Forghani Kamran
Institut für Optoelektronik, Universität Ulm, 89069 Ulm, Germany
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Kirste Lutz
Fraunhofer-Institut für Angewandte Festkörperphysik, 79108 Freiburg, Germany
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