Fabrication of High Breakdown Pseudomorphic Modulation Doped Field Effect Transistors Using Double Dry Etched Gate Recess Technology in Combination with E-Beam T-Gate Lithography

スポンサーリンク

概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 1994-12-30

著者

• KOHLER Klaus

  Fraunhofer-Institut fur Angewandte Festkorperphysik

• Hulsmann Axel

  Fraunhofer Institut Fur Angewandte Festkorperphysik

• Kohler Klaus

  Fraunhofe-institut Fur Angewandte Festkorperphysik

• Kohler Klaus

  Fraunhofer Institut Fur Angewandte Festkorperphysik

• Braunstein Jurgen

  Fraunhofer Institut Fur Angewandte Festkorperphysik

• BRONNER Wolfgang

  Fraunhofer Institut fur Angewandte Festkorperphysik

• TASKER Paul

  Fraunhofer Institut fur Angewandte Festkorperphysik

関連論文

• Band-Gap Renormalization and Excitonic Effects in Tunneling in Asymmetric Double Quantum Wells
• Bloch Oscillations in Semiconductor Superlattices
• E-Beam Ditrct-Write in a Dry-Etched Recess Gate HEMT Process for GaAs/AlGaAs Circuits : Microfabrication and Physics
• E-Beam Direct-Write in a Dry-Etched Recess Gate HEMT Process for GaAs/AlGaAs Circuits
• Fabrication of High Breakdown Pseudomorphic Modulation Doped Field Effect Transistors Using Double Dry Etched Gate Recess Technology in Combination with E-Beam T-Gate Lithography
• AlGaN-Based 355nm UV Light-Emitting Diodes with High Power Efficiency
• High Power Efficiency AlGaN-Based Ultraviolet Light-Emitting Diodes
• AlGaN Ultraviolet A and Ultraviolet C Photodetectors with Very High Specific Detectivity D^{*}
• Impact of Band Structure and Absorber Dynamics on Self-Q-Switching in GaN-Based Multisection Laser Diodes at High Reverse Bias
• Impact of Band Structure and Absorber Dynamics on Self-Q-Switching in GaN-Based Multisection Laser Diodes at High Reverse Bias

スポンサーリンク