Band-Gap Renormalization and Excitonic Effects in Tunneling in Asymmetric Double Quantum Wells

スポンサーリンク

概要

著者

関連論文

Time-Resolved Study of Carrier Transfer among InAs/GaAs Multi-Coupled Quantum Dots
Stacked InAs Self-Assembled Quantum Dots on (001) GaAs Grown by Molecular Beam Epitaxy
InAs/GaAs Multi-Coupled Quantum Dots Structure Enabling High-Intensity, Near-1.3-μm Emission due to Cascade Carrier Tunneling
Performance of All-Optical Switch Utilizing the Spin-Dependent Transient Rotation in a Multiple-Quantum-Well Etalon
Large Lateral Modulation in InAs/GaAs In-Plane Strained Superlattice on Slightly Misoriented (110) InP Substrate
Band-Gap Renormalization and Excitonic Effects in Tunneling in Asymmetric Double Quantum Wells
Novel InGaAs/GaAs Quantum Dot Structures Formed in Tetrahedral-Shaped Recesses on (111) B GaAs Substrate Using Metalorganic Vapor Phase Epitaxy
A Resonant-Tunneling Bipolar Transistor (RBT) : A New Functional Device with High Current Gain
A New Functional, Resonant-Tunneling Hot Electron Transistor (RHET)
Tunneling Hot Electron Transistor Using GaAs/AlGaAs Heterojunctions
Structure Analysis of GaAs-AlAs Superlattice Grown by Molecular Beam Epitaxy
Effect of H_2 on the Quality of Si-Doped Al_xGa_As Grown by MBE
Bloch Oscillations in Semiconductor Superlattices
Near-1.3-μm High-Intensity Photoluminescence at Room Temperature by InAs/GaAs Multi-Coupled Quantum Dots
Differences in Tunneling Time between 77 K and Room Temperature for Tunneling Biquantum Wells
Fast Recovery from Excitonic Absorption Bleaching in Type-II : GaAs/AlGaAs/AlAs Tunneling Biquantum Well
Quantum Well Width Dependence of Negative Differential Resistance of In_Al_As/In_Ga_As Resonant Tunneling Barriers Grown by MBE
Conduction Band Edge Discontinuity of In_Ga_As/In_(Ga_1 _xAl_x)_As(0≦x≦1) Heterostructures
Determination of the GaAs/AlAs Superlattice Period from the First-Order Superlattice Bragg Reflection
Fabrication of High Breakdown Pseudomorphic Modulation Doped Field Effect Transistors Using Double Dry Etched Gate Recess Technology in Combination with E-Beam T-Gate Lithography
A Pseudomorphic In_Ga_As/AlAs Resonant Tunneling Barrier with a Peak-to-Valley Current Ratio of 14 at Room Temperature
Back-Gated Field Effect in a Double Two-Dimensional Electron Gas Structure
Si Atomic-Planar-Doping in GaAs Made by Molecular Beam Epitaxy
Surface Polaritons Due to the Folded Optical Phonons in GaAs/AlAs Superlattices
Wannier-Stark Localization in Superlattices
Photoreflectance Spectra from GaAs Buffer Layer of GaAs/AlAs Multiple Quantum Well/GaAs Buffer/GaAs Substrate
A Static Random Access Memory Cell Using a Double-Emitter Resonant-Tunneling Hot Electron Transistor for Gigabit-Plus Memory Applications
Direct Observation of Al_xGa_As/GaAs Superlattices by REM
Excellent Negative Differential Resistance of InAlAs/InGaAs Resonant Tunneling Barrier Structures Grown by MBE
Effect of Silicon Doping Profile on I-V Characteristics of an AlGaAs/GaAs Resonant Tunneling Barrier Structure Grown by MBE
On a Possibility of Wavelength-Domain-Multiplication Memory Using Quantum Boxes
Schottky Barrier Height of Al n-In_Ga_As and Nb/n-In_Ga_As Diodes
Time Evolution of Excitonic Absorption Bleaching of Resonant Tunneling Bi-Quantum-Well Structures
Negative Differential Resistance of Strain-Free InGaAs/AlAsSb Resonant Tunneling Barrier Structures Lattice-Matched to InP
Fast Recovery of Excitonic Absorption Peaks in Tunneling Bi-Quantum-Well Structures
Picosecond Characterization of InGaAs/InAlAs Resonant Tunneling Barrier Diode by Electro-Optic Sampling
Numerical Study of Effect of Fabrication Damage on Carrier Dynamics in MQW Narrow Wires
Fabrication of Sub-100 nm Wires and Dots in GaAs/AlGaAs Multiquantum Well Using Focused Ion Beam Lithography
InGaAlAs /InGaAs and InAlAs/InGaAlAs Quantum-Well Structures Grown by MBE Using Pulsed Molecular Beam Method
AlGaN-Based 355nm UV Light-Emitting Diodes with High Power Efficiency
High Power Efficiency AlGaN-Based Ultraviolet Light-Emitting Diodes
AlGaN Ultraviolet A and Ultraviolet C Photodetectors with Very High Specific Detectivity D^{*}
Impact of Band Structure and Absorber Dynamics on Self-Q-Switching in GaN-Based Multisection Laser Diodes at High Reverse Bias
Impact of Band Structure and Absorber Dynamics on Self-Q-Switching in GaN-Based Multisection Laser Diodes at High Reverse Bias

もっと見る

スポンサーリンク