Structure Analysis of GaAs-AlAs Superlattice Grown by Molecular Beam Epitaxy
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1987-03-20
著者
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MUTO Shunichi
Fujitsu Laboratories Ltd.
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OSAMURA Kozo
Department of Metallurgy,Kyoto University
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Osamura Kozo
Department Of Metallurgy Kyoto University
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Muto Shunichi
Fujitsu Limited
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Hiyamizu Satoshi
Fujitsu Limited
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Hiyamizu Satoshi
Fujitsu Laboratories Limited
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MATSUSHIMA Wataru
Department of Metallurgy, Kyoto University
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OSAMURA Kozo
Research Institute for Applied Sciences
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Matsushima Wataru
Department Of Metallurgy Kyoto University
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Osamura K
Department Of Materials Science And Engineering Kyoto University
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Osamura Kozo
Department Of Materials Science And Engineering Kyoto University
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- Performance of All-Optical Switch Utilizing the Spin-Dependent Transient Rotation in a Multiple-Quantum-Well Etalon
- Large Lateral Modulation in InAs/GaAs In-Plane Strained Superlattice on Slightly Misoriented (110) InP Substrate
- Band-Gap Renormalization and Excitonic Effects in Tunneling in Asymmetric Double Quantum Wells
- Novel InGaAs/GaAs Quantum Dot Structures Formed in Tetrahedral-Shaped Recesses on (111) B GaAs Substrate Using Metalorganic Vapor Phase Epitaxy
- Heterogeneous Structure of Amorphous Materials
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- The Effect of Growth Temperature on the Mobility of Two-Dimensional Electron Gas in Selectively Doped GaAs/N-AlGaAs Heterostructures Grown by MBE
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- Direct Observation of Al_xGa_As/GaAs Superlattices by REM
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