Effect of Silicon Doping Profile on I-V Characteristics of an AlGaAs/GaAs Resonant Tunneling Barrier Structure Grown by MBE

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概要

• 論文の詳細を見る

• The effect of Si doping profile on I-V characteristics of an AlGaAs/GaAs resonant tunneling barrier (RTB) structure was studied by changing the thickness of an undoped GaAs "spacer" layer placed adjacent to the RTB. We found that the peak and the valley current density in the negative differential resistance region at 77 K depends strongly on the thickness of the spacer layer. By using a spacer layer of 50 A, we achieved a resonant tunneling diode with the highest peak current density of 2×10^4 A/cm^2 with a good peak-to-valley ratio of 3.5 at 77 K.

• 社団法人応用物理学会の論文
• 1986-07-20

著者

• YOKOYAMA Naoki

  Fujitsu Laboratories Ltd.

• MUTO Shunichi

  Fujitsu Laboratories Ltd.

• INATA Tsuguo

  Fujitsu Laboratories Ltd.

• Ishikawa T

  Riken Harima Institute

• HIYAMIZU Satoshi

  Graduate School of Engineering Science, Osaka University

• Hiyamizu Satoshi

  Fujitsu Limited

• Ishikawa T

  National Space Dev. Agency Of Japan Ibaraki Jpn

• Hiyamizu Satoshi

  Fujitsu Laboratories Limited

• Muto S

  Kek Ibaraki

• Yokoyama Naoki

  Department of Pediatrics, Kobe University Graduate School of Medicine

• Ohnishi Hiroaki

  Fujitsu Laboratories Ltd.

• Ohnishi H

  Taihei Kogyo Co. Ltd. Himeji Jpn

• Ohnishi Hiroaki

  Division Of Hematology Faculty Of Medicine Kagawa University

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