Effect of H_2 on the Quality of Si-Doped Al_xGa_<1-x>As Grown by MBE
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1983-02-20
著者
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MUTO Shunichi
Fujitsu Laboratories Ltd.
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Ishikawa T
Riken Harima Institute
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Hashimoto Hisao
Fujitsu Limited
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NANBU Kazuo
Fujitsu Laboratories Ltd.
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ISHIKAWA Tomonori
Fujitsu Laboratories LTD.
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Nanbu Kazuo
Fujitsu Laboratories Limited
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HIYAMIZU Satoshi
Graduate School of Engineering Science, Osaka University
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Hiyamizu Satoshi
Fujitsu Limited
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KONDO Kazuhiro
Fujitsu Limited
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Komeya Katutoshi
Graduate School Of Environment And Information Science Yokohama National University
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Ishikawa T
National Space Dev. Agency Of Japan Ibaraki Jpn
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Hiyamizu Satoshi
Fujitsu Laboratories Limited
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Muto S
Kek Ibaraki
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Kondo Kazuhiro
Fujitsu Laboratories Ltd.
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Kondo K
Fujitsu Laboratories Ltd.
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Ishikawa Tomonori
Fujitsu Limited
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Ishikawa Tomonori
Fujitsu Laboratories Limited
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Ishikawa Takatoshi
Department Of Applied Physics Faculty Of Science Fukuoka University
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Nanbu K
Fujitsu Laboratories Ltd.
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Hashimoto Hisao
Fujitsu Laboratories Limited
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