Differences in Tunneling Time between 77 K and Room Temperature for Tunneling Biquantum Wells
スポンサーリンク
概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1992-12-15
著者
-
SUGIYAMA Yoshihiro
Fujitsu Limited
-
TACKEUCHI Atsushi
Fujitsu Laboratories Ltd.
-
MUTO Shunichi
Fujitsu Laboratories Ltd.
-
INATA Tsuguo
Fujitsu Laboratories Ltd.
-
Sugiyama Y
Fujitsu Laboratories Ltd.
-
Muto Shigeki
Department Of Physics School Of Science Tokai University
-
Muto S
Kek Ibaraki
-
Ishikawa Takatoshi
Department Of Applied Physics Faculty Of Science Fukuoka University
-
Sugiyama Yoshinobu
Fujitsu Laboratories Ltd.
-
Sugiyama Yoshihiro
Fujitsu Laboratories Ltd.
-
Tackeuchi A
Department Of Applied Physics Waseda University
関連論文
- 特集「顕微鏡法による材料開発のための微細構造研究最前線(8)-照射効果の解明と耐照射材料および新素材開発をめざして-」の企画にあたって
- 非等方PIXON法によるリチウムイオン二次電池材料の微量添加元素のEELS分析
- 可視光応答型チタニア光触媒における窒素状態解析
- 窒素イオン注入によるチタニア光触媒の可視光応答化
- Phonon Assisted Tunneling and P/V-Ratio in a Magnetic Confined Quasi 0D InGaAs/InAlAs Resonant Tunneling Diode
- Size, density, and shape of InAs quantum dots in closely stacked multilayers grown by the Stranski-Krastanow mode
- Lattice Deformation and Ga Diffusion Concerning InAs Self-Assembled Quantum Dots on GaAs(100) as a Function of Growth Interruption Time
- InAs Self-Assembled Quantum Dots Coupled with GaSb Monolayer Quantum Well
- Effect of Size Fluctuations on the Photoluminescence Spectral Linewidth of Closely Stacked InAs Self-Assembled Quantum Dot Structures
- Crystallographic Properties of Closely Stacked InAs Quantum Dots Investigated by Ion Channeling
- Threading Dislocations in Multilayer Structure of InAs Self-Assembled Quantum Dots
- Interdiffusion between InAs Quantum Dots and GaAs Matrices
- Narrow Photoluminescemce Line Width of Closely Stacked InAs Self-Assembled Quantum Dot Structures
- Self-Formed InGaAs Quantum Dot Lasers with Multi-Stacked Dot Layer
- New Optical Memory Structure Using Self-Assembled InAs Quantum Dots
- Time-Resolved Study of Carrier Transfer among InAs/GaAs Multi-Coupled Quantum Dots
- Stacked InAs Self-Assembled Quantum Dots on (001) GaAs Grown by Molecular Beam Epitaxy
- InAs/GaAs Multi-Coupled Quantum Dots Structure Enabling High-Intensity, Near-1.3-μm Emission due to Cascade Carrier Tunneling
- Electron Spin-relaxation Dynamics in GaAs/AlGaAs Quantum Wells and InGaAs/InP Quantum Wells
- Performance of All-Optical Switch Utilizing the Spin-Dependent Transient Rotation in a Multiple-Quantum-Well Etalon
- Large Lateral Modulation in InAs/GaAs In-Plane Strained Superlattice on Slightly Misoriented (110) InP Substrate
- Band-Gap Renormalization and Excitonic Effects in Tunneling in Asymmetric Double Quantum Wells
- Phonon Assisted Tunneling and Peak-to-Valley Ratio in a Magnetically Confined Quasi Zero Dimensional InGaAs/InAlAs Resonant Tunneling Diode
- InGaAs/GaAs Tetrahedral-Shaped Recess Quantum Dot (TSR-QD)Technology (Special Issue on Quantum Effect Devices and Their Fabrication Technologies)
- Stacked InAs Self-Assembled Quantum Dots on (001) GaAs Grown by Molecular Beam Epitaxy
- Novel InGaAs/GaAs Quantum Dot Structures Formed in Tetrahedral-Shaped Recesses on (111) B GaAs Substrate Using Metalorganic Vapor Phase Epitaxy
- All-Solid-State, THz Radiation Source Using a Saturable Bragg Reflector in a Femtosecond Mode-Locked Laser
- Ultraviolet picosecond pulses from an all-solid-state Ce : LiSAF master oscillator and Ce : LiCAF power amplifier system
- Critical cluster size of InAs quantum dots formed by Stranski-Krastanow mode
- Indium Adatom Migration in InAs/GaAs Quantum-Dot Growth
- Triggered single-photon emission and cross-correlation properties in InAlAs quantum dot
- Photon Antibunching Observed from an InAlAs Single Quantum Dot
- A Resonant-Tunneling Bipolar Transistor (RBT) : A New Functional Device with High Current Gain
- A New Functional, Resonant-Tunneling Hot Electron Transistor (RHET)
- Tunneling Hot Electron Transistor Using GaAs/AlGaAs Heterojunctions
- Core Absorption Magnetic Circular Dichroism, Photoemission and Inverse Photoemission of MnAlGa and Mn_2Sb
- The Effects of Tungsten-Halogen Lamp Annealing on a Selectively Doped GaAs/N-AlGaAs Heterostructure Grown by MBE
- On extended energy-loss fine structure data analysis for obtaining reliable structural parameters
- The Influence of X-Ray Irradiation on Structural Relaxation and Crystallization of Amorphous Silicon Films
- Structure Analysis of GaAs-AlAs Superlattice Grown by Molecular Beam Epitaxy
- Effect of H_2 on the Quality of Si-Doped Al_xGa_As Grown by MBE
- Magnetic Circular Dichroism of Ni-Pd Alloys in Ni 2p, 3p, Pd 3p, and 4p Core Excitation Regions : Enhancement of Ni 3d Orbital Moment
- シンクロトロン放射光照射による非晶質シリコンの局所構造緩和
- Removal of Water Vapor in a Mist Singlet Oxygen Generator for Chemical Oxygen Iodine Laser
- Development of a Mist Singlet Oxygen Generator
- 霧化型励起酸素発生器の基礎研究III
- Numerical Simulation of a Mist Singlet Oxygen Generator(Optics and Quantum Electronics)
- 霧化型励起酸素発生器の基礎研究II
- 霧化型励起酸素発生器の基礎研究
- Deterministic Single-Photon and Polarization-Correlated Photon Pair Generations From a Single InAlAs Quantum Dot
- Spin Depolarization via Tunneling Effects in Asymmetric Double Quantum Dot Structure
- Quantum Gates Based on Electron Spins of Triple Quantum Dot
- Near-1.3-μm High-Intensity Photoluminescence at Room Temperature by InAs/GaAs Multi-Coupled Quantum Dots
- Differences in Tunneling Time between 77 K and Room Temperature for Tunneling Biquantum Wells
- Fast Recovery from Excitonic Absorption Bleaching in Type-II : GaAs/AlGaAs/AlAs Tunneling Biquantum Well
- Quantum Well Width Dependence of Negative Differential Resistance of In_Al_As/In_Ga_As Resonant Tunneling Barriers Grown by MBE
- Extremely High 2DEG Concentration in Selectively Doped In_Ga_As/N-In_Al_As Heterostructures Grown by MBE
- Conduction Band Edge Discontinuity of In_Ga_As/In_(Ga_1 _xAl_x)_As(0≦x≦1) Heterostructures
- MBE Growth of InGaAlAs Lattice-Matched to InP by Pulsed Molecular Beam Method
- MBE Growth of High-Quality GaAs Using Triethylgallium as a Gallium Source
- Magnetic Circular Dichroism of Eu, Gd, Tb, Dy, and Ho in the 4d-4f Excitation Region
- Selectively Doped GaAs/ N-Al_Ga_As Heterostructures Grown by Gas-Source MBE : Semiconductors and Semiconductor Devices
- Effects of As_2 Flux and Atomic Hydrogen Irradiation for Growth of InGaAs Quantum Wires by Molecular Beam Epitaxy
- THz-radiation Generation from an Intracavity Saturable Bragg Reflector in a Magnetic Field
- Effects of As_2 Flux and Atomic Hydrogen Irradiation for Growth of InGaAs Quantum Wires by Molecular Beam Epitaxy
- Difference in Diffusion Length of Ga Atoms under As_2 and As_4 Flux in Molecular Beam Epitaxy
- Ultrafast Photoconductive Switches with a 43 nm Gap Fabricated Using an Atomic Force Microscope
- Fabrication of Quantum Wire Structures on Non-Planer InP Substrates by Molecular Beam Epitaxy (Special Issue on Quantum Effect Devices and Their Fabrication Technologies)
- Ultrafast Photoconductive Switches with a 43nm Gap Fabricated by an Atomic Force Microscope
- Electrooptic Vector Sampling : Measurement of Vector Components of Electric Field by the Polarization Control of Probe Light
- High Speed Resistive Switching in Pt/TiO_2/TiN Resistor for Multiple-Valued Memory Device
- Electronic NO_2 Sensor Using Merocyanine-Doped Langmuir Blodgett Films
- Exchange Interaction of Optically Created Electrons in Coupled Quantum Dots
- Comparative Studies on Sensitivity and Stability of Fiber-optic Oxygen Sensor Using Several Cladding Polymers
- Preliminary Experiment for Polymer Waveguide-Type Optical Isolator : A Pulsed Optical Isolator Operation in Poly(l-Menthylmethacrylate/Benzylmethacrylate)Copolymer Slab Waveguide
- A New Plastic Optical Fiber Sensor for Oxygen Based on Fluorescence Enhancement
- TE-TM Mode Converter Using Optically Active Polymer
- Determination of the GaAs/AlAs Superlattice Period from the First-Order Superlattice Bragg Reflection
- A Pseudomorphic In_Ga_As/AlAs Resonant Tunneling Barrier with a Peak-to-Valley Current Ratio of 14 at Room Temperature
- Back-Gated Field Effect in a Double Two-Dimensional Electron Gas Structure
- Si Atomic-Planar-Doping in GaAs Made by Molecular Beam Epitaxy
- Surface Polaritons Due to the Folded Optical Phonons in GaAs/AlAs Superlattices
- Wannier-Stark Localization in Superlattices
- Photoreflectance Spectra from GaAs Buffer Layer of GaAs/AlAs Multiple Quantum Well/GaAs Buffer/GaAs Substrate
- A Static Random Access Memory Cell Using a Double-Emitter Resonant-Tunneling Hot Electron Transistor for Gigabit-Plus Memory Applications
- Direct Observation of Al_xGa_As/GaAs Superlattices by REM
- Lowering the Switching Current of Resistance Random Access Memory Using a Hetero Junction Structure Consisting of Transition Metal Oxides
- Excellent Negative Differential Resistance of InAlAs/InGaAs Resonant Tunneling Barrier Structures Grown by MBE
- Effect of Silicon Doping Profile on I-V Characteristics of an AlGaAs/GaAs Resonant Tunneling Barrier Structure Grown by MBE
- On a Possibility of Wavelength-Domain-Multiplication Memory Using Quantum Boxes
- Schottky Barrier Height of Al n-In_Ga_As and Nb/n-In_Ga_As Diodes
- Temperature Dependence of Photoluminescence Decay Time in Tunneling Bi-Quantum-Well Structures
- Time Evolution of Excitonic Absorption Bleaching of Resonant Tunneling Bi-Quantum-Well Structures
- Negative Differential Resistance of Strain-Free InGaAs/AlAsSb Resonant Tunneling Barrier Structures Lattice-Matched to InP
- Fast Recovery of Excitonic Absorption Peaks in Tunneling Bi-Quantum-Well Structures
- Picosecond Characterization of InGaAs/InAlAs Resonant Tunneling Barrier Diode by Electro-Optic Sampling
- Numerical Study of Effect of Fabrication Damage on Carrier Dynamics in MQW Narrow Wires
- Fabrication of Sub-100 nm Wires and Dots in GaAs/AlGaAs Multiquantum Well Using Focused Ion Beam Lithography
- InGaAlAs /InGaAs and InAlAs/InGaAlAs Quantum-Well Structures Grown by MBE Using Pulsed Molecular Beam Method
- Removal of Water Vapor in a Mist Singlet Oxygen Generator for Chemical Oxygen Iodine Laser