Temperature Dependence of Photoluminescence Decay Time in Tunneling Bi-Quantum-Well Structures
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概要
- 論文の詳細を見る
We studied the nonresonant electron tunneling time in tunneling bi-quantum-well structures with a pump-probe photoluminescence (PL) system using optical mixing. The PL decay time of narrow wells for an Al_xGa_<1-x>As (x=0.51) barrier of 4.0 nm, determined by tunneling, decreases from 40 ps to 24 ps as the temperature increases from 6 K to 132 K. We attribute this to electrons in an exciton state thermalizing into free electrons having a faster tunneling rate.
- 社団法人応用物理学会の論文
- 1991-08-15
著者
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TACKEUCHI Atsushi
Fujitsu Laboratories Ltd.
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INATA Tsuguo
Fujitsu Laboratories Ltd.
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Muto Sunichi
Fujitsu Laboratories Ltd.
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SUGlYAMA Yoshihiro
Fujitsu Laboratories Ltd.
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