INATA Tsuguo | Fujitsu Laboratories Ltd.
スポンサーリンク
概要
関連著者
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INATA Tsuguo
Fujitsu Laboratories Ltd.
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MUTO Shunichi
Fujitsu Laboratories Ltd.
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Ishikawa T
Riken Harima Institute
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Muto S
Kek Ibaraki
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NAKATA Yoshiaki
Fujitsu Laboratories Ltd.
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Nakata Y
Fujitsu Ltd. Atsugi Jpn
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TACKEUCHI Atsushi
Fujitsu Laboratories Ltd.
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Nishikawa Y
Toshiba Corp. Kawasaki Jpn
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Nishikawa Y
Materials And Devices Research Laboratories Toshiba Corporation
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Ishikawa Takatoshi
Department Of Applied Physics Faculty Of Science Fukuoka University
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Nakata Yoshiaki
Fujitsu Laboratories Limited
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FUJII Toshio
Fujitsu Laboratories Ltd.
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Hiyamizu Satoshi
Fujitsu Limited
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Hiyamizu Satoshi
Fujitsu Laboratories Limited
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Fujii Toshio
Fujitsu Laboratories Lid.
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Tackeuchi A
Department Of Applied Physics Waseda University
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SUGIYAMA Yoshihiro
Fujitsu Limited
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Sugiyama Y
Fujitsu Laboratories Ltd.
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HIYAMIZU Satoshi
Graduate School of Engineering Science, Osaka University
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Sugiyama Yoshinobu
Fujitsu Laboratories Ltd.
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Sugiyama Yoshihiro
Fujitsu Laboratories Ltd.
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YOKOYAMA Naoki
Fujitsu Laboratories Ltd.
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Muto Shigeki
Department Of Physics School Of Science Tokai University
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Ishikawa T
National Space Dev. Agency Of Japan Ibaraki Jpn
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Yokoyama Naoki
Department of Pediatrics, Kobe University Graduate School of Medicine
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Ohnishi Hiroaki
Fujitsu Laboratories Ltd.
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Ohnishi H
Taihei Kogyo Co. Ltd. Himeji Jpn
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Ohnishi Hiroaki
Division Of Hematology Faculty Of Medicine Kagawa University
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武藤 真三
山梨大学
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Ishikawa T
Kyushu Univ. Fukuoka Jpn
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SASA Shigehiko
Fujitsu Laboratories Ltd.
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Ishikawa Tetsuya
Riken Harima Institute
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Sasa S
Fujitsu Laboratories Ltd.
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Yokoyama N
Fujitsu Laboratories Ltd.
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Sasa Shigehiko
Nanomaterials Microdevices Research Center Osaka Institute Of Technology
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Yokoyama Naoki
Institute For Nano Quantum Information Electronics The University Of Tokyo
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USUKI Tatsuya
Fujitsu Laboratories Ltd.
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Wada Osamu
Materials & Electronic Device Laboratory Mitsubishi Electric Corporation
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WADA Osamu
Fujitsu Laboratories Ltd.
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Usuki Tatsuya
Department Of Applied Physics Osaka University
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Usuki Tatsuya
Fujitsu Lab. Ltd. Atsugi Jpn
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Inata Tsuguo
Fujitsu Ltd.
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Wada Osamu
FESTA Laboratories
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Wada O
The Department Of Electrical And Electronics Engineering Kobe University
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Wada Osamu
Fujitsu Laboratories Limited
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Wada Osamu
Fujitsu Laboratories
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Wada O
The Femtosecond Technology Research Association:the Kobe University.
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Nishikawa Yukie
Corporate Research & Development Center Toshiba Corporation
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KONDO Kazuhiro
Fujitsu Limited
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Komeya Katutoshi
Graduate School Of Environment And Information Science Yokohama National University
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TATSUTA Shigeru
Fujitsu Ltd.
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OKAMURA Shigeru
Fujitsu Ltd.
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Hiyamizu Satoshi
Fujitsu Ltd.
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Kondo Kazuhiro
Fujitsu Laboratories Ltd.
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Kondo K
Fujitsu Laboratories Ltd.
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ANDO Hideyasu
Fujitsu Laboratories Ltd.
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ISHIKAWA Hideaki
Fujitsu Laboratories Ltd.
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Fujii Toshio
Fujitsu Laboratories Limited
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NAKAMURA Satoshi
Fujitsu Laboratories Ltd.
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Ishikawa T
Fujitsu Laboratories Ltd.
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Wada Osamu
The Femtosecond Technology Research Association:the Kobe University.
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Fujii T
Central Research Institute Of Electric Power Industry
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Miyauchi Eizo
Fujitsu Laboratories Ltd.
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Usuki T
Fujitsu Lab. Ltd. Atsugi Jpn
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Muto Sunichi
Fujitsu Laboratories Ltd.
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SUGlYAMA Yoshihiro
Fujitsu Laboratories Ltd.
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Tatsuta Shigeru
Fujitsu Laboratories Ltd.
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Okamura Shigeru
Fujitsu Laboratories Limited
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Nakamura Satoshi
Fujitsu Laboratories Limited
著作論文
- InAs/GaAs Multi-Coupled Quantum Dots Structure Enabling High-Intensity, Near-1.3-μm Emission due to Cascade Carrier Tunneling
- The Effects of Tungsten-Halogen Lamp Annealing on a Selectively Doped GaAs/N-AlGaAs Heterostructure Grown by MBE
- Near-1.3-μm High-Intensity Photoluminescence at Room Temperature by InAs/GaAs Multi-Coupled Quantum Dots
- Differences in Tunneling Time between 77 K and Room Temperature for Tunneling Biquantum Wells
- Fast Recovery from Excitonic Absorption Bleaching in Type-II : GaAs/AlGaAs/AlAs Tunneling Biquantum Well
- Quantum Well Width Dependence of Negative Differential Resistance of In_Al_As/In_Ga_As Resonant Tunneling Barriers Grown by MBE
- Conduction Band Edge Discontinuity of In_Ga_As/In_(Ga_1 _xAl_x)_As(0≦x≦1) Heterostructures
- Selectively Doped GaAs/ N-Al_Ga_As Heterostructures Grown by Gas-Source MBE : Semiconductors and Semiconductor Devices
- A Pseudomorphic In_Ga_As/AlAs Resonant Tunneling Barrier with a Peak-to-Valley Current Ratio of 14 at Room Temperature
- Excellent Negative Differential Resistance of InAlAs/InGaAs Resonant Tunneling Barrier Structures Grown by MBE
- Effect of Silicon Doping Profile on I-V Characteristics of an AlGaAs/GaAs Resonant Tunneling Barrier Structure Grown by MBE
- Temperature Dependence of Photoluminescence Decay Time in Tunneling Bi-Quantum-Well Structures
- Time Evolution of Excitonic Absorption Bleaching of Resonant Tunneling Bi-Quantum-Well Structures
- Negative Differential Resistance of Strain-Free InGaAs/AlAsSb Resonant Tunneling Barrier Structures Lattice-Matched to InP
- Fast Recovery of Excitonic Absorption Peaks in Tunneling Bi-Quantum-Well Structures
- Picosecond Characterization of InGaAs/InAlAs Resonant Tunneling Barrier Diode by Electro-Optic Sampling