Negative Differential Resistance of Strain-Free InGaAs/AlAsSb Resonant Tunneling Barrier Structures Lattice-Matched to InP
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概要
- 論文の詳細を見る
We grew AlAsSb/InGaAs(4.40nm) resonant tunneling barrier structures lattice-matched to InP substrates using molecular beam epitaxy. Peak-to-valley current ratios exceeding 10 at room temperature were achieved for the first time with fully lattice-matched resonant tunneling barrier structures (15 with a peak current density, J_P, of 2.37×10^3 A/cm^2 and 11 with J_P of 1.51×10^4 A/cm^2). These values are comparable to peak-to-valley current ratios in InGaAs/AlAs pseudomorphic resonant tunneling barrier structures with corresponding peak current densities.
- 社団法人応用物理学会の論文
- 1990-08-20
著者
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NAKATA Yoshiaki
Fujitsu Laboratories Ltd.
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Nakata Y
Fujitsu Ltd. Atsugi Jpn
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MUTO Shunichi
Fujitsu Laboratories Ltd.
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INATA Tsuguo
Fujitsu Laboratories Ltd.
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Ishikawa T
Riken Harima Institute
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FUJII Toshio
Fujitsu Laboratories Ltd.
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Nishikawa Y
Toshiba Corp. Kawasaki Jpn
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Nishikawa Y
Materials And Devices Research Laboratories Toshiba Corporation
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Muto S
Kek Ibaraki
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Fujii Toshio
Fujitsu Laboratories Lid.
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Ishikawa Takatoshi
Department Of Applied Physics Faculty Of Science Fukuoka University
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Nakata Yoshiaki
Fujitsu Laboratories Limited
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