Highly Reliable Operation of InGaP/InGaAlP Multi-Quantum-Well Visible Laser Diodes

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概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 1992-10-01

著者

• Nakata Y

  Fujitsu Ltd. Atsugi Jpn

• Okajima M

  Toshiba Corporation Advanced Semiconductor Devices Research Laboratories

• HATAKOSHI Gen-ichi

  Toshiba Corporation, Advanced Semiconductor Devices Research Laboratories

• ITAYA Kazuhiko

  Toshiba Corporation, Advanced Semiconductor Devices Research Laboratories

• NISHIKAWA Yukie

  Toshiba Corporation, Materials and Devices Research Laboratories

• WATANABE Minoru

  Toshiba Research and Development Center

• OKAJIMA Masaki

  Toshiba Research and Development Center

• NITTA Koichi

  Toshiba Research and Development Center

• Onomura M

  Toshiba Corporation Advanced Semiconductor Devices Research Laboratories

• Okajima M

  Toshiba Corp. Kawasaki

• Okajima Masaki

  Toshiba Research & Development Center

• Itaya K

  Toshiba Corporation Advanced Semiconductor Devices Research Laboratories

• Nishikawa Y

  Toshiba Corp. Kawasaki Jpn

• Nishikawa Y

  Materials And Devices Research Laboratories Toshiba Corporation

• Itaya Kazuhiko

  Materials And Devices Research Laboratories Research And Development Center Toshiba Corporation

• Itaya Kazuhiko

  Toshiba Corporation Advanced Semiconductor Devices Research Laboratories

• Hatakoshi Gen-ichi

  Toshiba Corporation Advanced Semiconductor Devices Research Laboratories

• Nitta K

  Kobe Univ. Kobe Jpn

• Onomura M

  Univ. Tsukuba

関連論文

• Optical Polarization Properties of InAs/GaAs Quantum Dot Semiconductor Optical Amplifier
• Size, density, and shape of InAs quantum dots in closely stacked multilayers grown by the Stranski-Krastanow mode
• Polarization-Independent Photoluminescence from Columnar InAs/GaAs Self-Assembled Quantum Dots : Semiconductors
• Lattice Deformation and Ga Diffusion Concerning InAs Self-Assembled Quantum Dots on GaAs(100) as a Function of Growth Interruption Time
• Quantum-Dot Semiconductor Optical Amplifiers for High Bit-Rate Signal Processing over 40Gbit/s
• A Model of Carrier Capturing and Recombination Process in Quantum-Dot System : Influence of Excitation Power on Spontaneous Emission Intensity and Lifetime
• InAs Self-Assembled Quantum Dots Coupled with GaSb Monolayer Quantum Well
• Lasing Characteristics and Carrier Dynamics of 1.3-μm InGaAs/GaAs Quantum Dot Lasers
• Quantum Dot Infrared Photodetector Using Modulation Doped InAs Self-Assembled Quantum Dots
• Effect of Size Fluctuations on the Photoluminescence Spectral Linewidth of Closely Stacked InAs Self-Assembled Quantum Dot Structures
• Crystallographic Properties of Closely Stacked InAs Quantum Dots Investigated by Ion Channeling
• Threading Dislocations in Multilayer Structure of InAs Self-Assembled Quantum Dots
• Dynamic Properties of InAs Self-Assembled Quantum Dots Evaluated by Capacitance-Voltage Measurements
• Interdiffusion between InAs Quantum Dots and GaAs Matrices
• Narrow Photoluminescemce Line Width of Closely Stacked InAs Self-Assembled Quantum Dot Structures
• Self-Formed InGaAs Quantum Dot Lasers with Multi-Stacked Dot Layer
• New Optical Memory Structure Using Self-Assembled InAs Quantum Dots
• Time-Resolved Study of Carrier Transfer among InAs/GaAs Multi-Coupled Quantum Dots
• Stacked InAs Self-Assembled Quantum Dots on (001) GaAs Grown by Molecular Beam Epitaxy
• InAs/GaAs Multi-Coupled Quantum Dots Structure Enabling High-Intensity, Near-1.3-μm Emission due to Cascade Carrier Tunneling
• Electron Spin-relaxation Dynamics in GaAs/AlGaAs Quantum Wells and InGaAs/InP Quantum Wells
• Performance of All-Optical Switch Utilizing the Spin-Dependent Transient Rotation in a Multiple-Quantum-Well Etalon
• Large Lateral Modulation in InAs/GaAs In-Plane Strained Superlattice on Slightly Misoriented (110) InP Substrate
• Stacked InAs Self-Assembled Quantum Dots on (001) GaAs Grown by Molecular Beam Epitaxy
• Quantum Dots Infrared Photodetector Using Modulation Doped InAs Self-Assembled Quantum Dots
• Thermal Analysis for GaN Laser Diodes
• Analysis of Device Characteristics for InGaN Semiconductor Lasers
• Reactive Ion Beam Etching and Overgrowth Process in the Fabrication of InGaN Inner Stripe Laser Diodes
• Reactive Ion Beam Etching and Overgrowth Process for Fabrication of InGaN Inner Stripe Laser Diodes
• Room Temperature Pulsed Operation of Nitride Based Multi-Quantum-Well Laser Diodes with Cleaved Facets on Conventional C-Face Sapphire Substrates
• The Influence of Surface Treatment on the Quality of Pd/Au Contacts to p-type ZnSe
• Schottky Barrier Height Reduction for p-ZnSe Contacts by Sulfur Treatment
• Surface Preparation Effects for Molecular Beam Epitaxial Growth of ZnSe Layers on InGaP Layers
• Highly Reliable Operation of InGaP/InGaAlP Multi-Quantum-Well Visible Laser Diodes
• High-Power InGaAIP Laser Diodes for High-Density Optical Recording : Visible Lasers
• High-Power InGaAlP Laser Diodes for High-Density Optical Recording
• Reliable High-Power Operation of InGaAlP Visible Light Laser Diodes with Strained Active Layer
• Highly Reliable Transverse-Mode Stabilized InGaAlP Visible Light Laser Diodes at High-Power Operation
• Buried Facet BMH AlGaAs Laser : B-4: LD AND LED-2
• Solid Phase Crystallization in Initial Growth Region of Polycrystalline Silicon Layer During Deposition at 180℃ by Plasma Chemical Vapor Deposition
• Dependence of photodarkening on alloy composition of CdSxSe_＜1-x＞ nanocrystals in glasses
• Laser-induced reversion of photodarkening in CdS-doped glass
• Effect of hydrogenation on photodarkening in CdS-doped glass
• Structure of Ultrathin Epitaxial CeO_2 Films Grown on Si(111)
• Electrical Properties of Single Crystalline CeO_2 High-k Gate Dielectrics Directly Grown on Si(111)
• Direct Growth of Single Crystalline CeO_2 High-k Gate Dielectrics
• Effects of Growth Parameters on Oxygen Incorporation into InGaAlP Grown by Metalorganic Chemical Vapor Deposition
• Hybrid-Type InGaAlP/GaAs Distributed Bragg Reflectors for InGaAlP Light-Emitting Diodes
• Emission Properties of InGaAlP Visible Light-Emitting Diodes Employing a Multiquantum-Well Active Layer
• Near-1.3-μm High-Intensity Photoluminescence at Room Temperature by InAs/GaAs Multi-Coupled Quantum Dots
• Fast Recovery from Excitonic Absorption Bleaching in Type-II : GaAs/AlGaAs/AlAs Tunneling Biquantum Well
• Quantum Well Width Dependence of Negative Differential Resistance of In_Al_As/In_Ga_As Resonant Tunneling Barriers Grown by MBE
• Extremely High 2DEG Concentration in Selectively Doped In_Ga_As/N-In_Al_As Heterostructures Grown by MBE
• Conduction Band Edge Discontinuity of In_Ga_As/In_(Ga_1 _xAl_x)_As(0≦x≦1) Heterostructures
• MBE Growth of InGaAlAs Lattice-Matched to InP by Pulsed Molecular Beam Method
• Characteristics of Mg-Doped GaN and AlGaN Grown by H_2-Ambient and N_2-Ambient Metalorganic Chemical Vapor Deposition
• Enhancement of Nitrogen Incorporation in ZnSe Grown on Misoriented GaAs Substrates by Molecular Beam Epitaxy
• High quality La aluminates/Si (100) interface realized by passivation of Si dangling bonds with one monolayer epitaxial SrSi_2
• A Pseudomorphic In_Ga_As/AlAs Resonant Tunneling Barrier with a Peak-to-Valley Current Ratio of 14 at Room Temperature
• Current-Voltage Characteristics of p-p Isotype InGaAlP/GaAs Heterojunction with a Large Valence-Band Discontinuity
• High-Efficiency InGaAlP Visible Light-Emitting Diodes
• Astigmatism in Ridge-Stripe InGaAlP Laser Diodes (SOLID STATE DEVICES AND MATERIALS 1)
• A New Transverse-Mode Stabilized InGaAlP Visible Light Laser Diode Using p-p Isotype Heterobarrier Blocking : Special Section : Solid State Devices and Materials 2 : III-V Compound Semiconductors Devices and Materials
• Low-Voltage Operated Piezoelectric Tunable Capacitor for Reconfigurable RF Systems
• Enhancement of Dielectric Constant due to Expansion of Lattice Spacing in CeO_2 Directly Grown on Si(111)
• Terahertz Wave Enhanced Transmission through a Single Subwavelength Aperture with Periodic Surface Structures
• Excellent Negative Differential Resistance of InAlAs/InGaAs Resonant Tunneling Barrier Structures Grown by MBE
• Negative Differential Resistance of Strain-Free InGaAs/AlAsSb Resonant Tunneling Barrier Structures Lattice-Matched to InP
• Fabrication of Sub-100 nm Wires and Dots in GaAs/AlGaAs Multiquantum Well Using Focused Ion Beam Lithography
• InGaAlAs /InGaAs and InAlAs/InGaAlAs Quantum-Well Structures Grown by MBE Using Pulsed Molecular Beam Method
• Analysis of Auger Recombination for Wurtzite InGaN
• Analysis of Auger Recombination for Wurtzite InGaN
• Terahertz Wave Enhanced Transmission through a Single Subwavelength Aperture with Periodic Surface Structures
• Analysis of Auger Recombination in Wurtzite InGaN

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