Enhancement of Dielectric Constant due to Expansion of Lattice Spacing in CeO_2 Directly Grown on Si(111)

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概要

• 論文の詳細を見る
• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
• 2004-04-30

著者

• Matsushita Daisuke

  Department Of Crystalline Materials Science Graduate School Of Engineering Nagoya University

• Matsushita Daisuke

  Advanced Lsi Technology Laboratory Corporate Research & Development Center Toshiba Corporation

• Nakata Y

  Fujitsu Ltd. Atsugi Jpn

• Nishikawa Y

  Materials And Devices Research Laboratories Toshiba Corporation

• Nishikawa Yukie

  Advanced Lsi Technology Laboratory Corporate Research & Development Center Toshiba Corporation

• FUKUSHIMA Noburu

  Advanced LSI Technology Laboratory, Corporate Research & Development Center, Toshiba Corporation

• SATAKE Hideki

  Advanced LSI Technology Laboratory Research & Development Center, Toshiba Co.

• YAMAGUCHI Takeshi

  Advanced LSI Technology Laboratory, Toshiba Corporation

• SATOU Nobutaka

  Toshiba Nanoanalysis Corporation

• Yoshiki Masahiko

  Toshiba Nanoanalysis Corporation

• Satake Hideki

  Advanced Lsi Technology Laboratory Corporate R&d Center Toshiba Corporation

• SCHIMIZU Tatsuo

  Advanced LSI Technology Laboratory, Corporate Research & Development Center, Toshiba Corporation

• Schimizu T

  Advanced Lsi Technology Laboratory Corporate Research & Development Center Toshiba Corporation

• Schimizu Tatsuo

  Advanced Lsi Technology Laboratory Corporate Research & Development Center Toshiba Corporation

• Yamaguchi Takeshi

  Advanced Lsi Technology Laboratory Corporate Research & Development Center Toshiba Corporation

• Yamaguchi Takeshi

  Advanced Lsi Technology Laboratory Corporate R&d Center Toshiba Corporation

• Fukushima N

  Advanced Lsi Technology Laboratory Corporate Research & Development Center Toshiba Corporation

• Fukushima Noburu

  Advanced Lsi Technology Laboratory Corporate R&d Center Toshiba Corporation

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