A Guideline for Accurate Two-Frequency Capacitance Measurement for Ultra-Thin Gate Oxides
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概要
- 論文の詳細を見る
- 2000-08-28
著者
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Yasuda Naoki
Mirai-aset Aist
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Toriumi Akira
Mirai-advanced Semiconductor Research Center (mirai-asrc) National Institute Of Advanced Industrial
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Toriumi Akira
Advanced Lsi Technology Laboratory Toshiba Corporation
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Yasuda Naoki
Advanced Lsi Technology Laboratory Research & Development Center Toshiba Co.
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NARA Akiko
Advanced LSI Technology Laboratory Research & Development Center, Toshiba Co.
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SATAKE Hideki
Advanced LSI Technology Laboratory Research & Development Center, Toshiba Co.
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Toriumi Akira
Mirai Advanced Semiconductor Research Center (asrc) National Institute Of Advanced Industrial Scienc
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SATAKE Hideki
MIRAI, Association of Super-Advanced Electronics Technologies (ASET)
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Nara Akiko
Advanced Lsi Technology Laboratory Research & Development Center Toshiba Co.
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Toriumi Akira
Advanced Lsi Technology Laboratory Research & Development Center Toshiba Co.
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Satake Hideki
Mirai Association Of Super-advanced Electronics Technologies (aset)
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Satake Hideki
Advanced Lsi Technology Laboratory Corporate R&d Center Toshiba Corporation
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Satake Hideki
Mirai-aset Aist
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Toriumi Akira
Advanced Lsi Technology Laboratory Corporate R&d Center Toshiba Corporation
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Toriumi Akira
Mirai-advanced Semiconductor Research Center (mirai-asrc) National Institute Of Advanced Industrial
関連論文
- Anomalous positive V_ shift in HfAlO_x MOS gate stacks
- Study of La Concentration Dependent V_ Shift in Metal/HfLaOx/Si Capacitors
- Field-Dependent Mobility of Highly Oriented Pentacene Thin-Film Transistors
- Ge/GeO_2 Interface Control with High-Pressure Oxidation for Improving Electrical Characteristics
- Mobility Variations in Mono- and Multi-Layer Graphene Films
- Low Temperature Phosphorus Activation in Germanium through Nickel Germanidation for Shallow n^+/p Junction
- A Significant Shift of Schottky Barrier Heights at Strongly Pinned Metal/Germanium Interface by Inserting an Ultra-Thin Insulating Film
- Grain Size Increase and Field-Effect Mobility Enhancement of Pentacene Thin Films Prepared in a Low-Pressure H_2 Ambient
- Evidence of Electron Trapping Center at Pentacene/SiO_2 Interface
- Origin of Structural Phase Transformation of SiO_2-doped HfO_2
- Advanced Characterization of High-k Gate Stack by Internal Photo Emission (IPE) : Interfacial Dipole and Band Diagram in Al/Hf(Si)O_2/Si MOS Structure
- Effect of Ultra-thin Al_2O_3 Insertion on Fermi-level Pinning at Metal/Ge Interface
- Thermally Robust Germanium MIS Gate Stacks with LaYO_3 Dielectric Film
- Direct Evidence of GeO Volatilization from GeO_2 Films and Impact of Its Suppression on GeO_2/Ge MIS Characteristics
- Reduction of Bias-Induced Threshold Voltage Shift in Pentacene Field Effect Transistors by Interface Modification and Molecular Ordering
- Suppression of Leakage Current and Moisture Absorption of La_2O_3 films with Ultraviolet Ozone Post Treatment
- Excellent Leakage Current of Crystallized Silicon-Doped HfO_2 Films Down to Sub-nm EOT
- Thermally Robust Y_2O_3/Ge MOS Capacitors
- Moisture Absorption-Induced Permittivity Deterioration and Surface Roughness Enhancement of Lanthanum Oxide Films on Silicon
- Design Methodology for La_2O_3-Based Ternally Higher-κ Dielectrics
- A New Hf-based Dielectric Member, HfLaOx, for Amorphous High-k Gate Insulators in Advanced CMOS
- Generalized Model of Oxidation Mechanism at HfO_2/Si Interface with Post-Deposition Annealing
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- Far Infrared Study of Structural Distortion and Transformation of HfO_2 by Introducing a Slight Amount of Si
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- Study on Oxynitride Buffer Layers in HfO_2 Metal-Insulator-Semiconductor Structures for Improving Metal-Insulator-Semiconductor Field-Effect Transistor Performance
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- Impact of Surface Hydrophilicization prior to Atomic Layer Deposition for HfO_2/Si Direct-Contact Gate Stacks
- Impact of Initial Traps on TDDB and NBTI Reliabilities in High-k Gate Dielectrics
- Si-Capped Annealing of HfO_2-based Dielectrics for Suppressing Interface Layer Growth and Oxygen Out-Diffusion
- The first principles calculations of Fermi level pinning in FUSI/PtSi/HfO_2/Si system induced by local distortion of HfO_2
- Theoretical analysis of the Fermi level pinning in HfO_2/Si system induced by the interface defect states
- Gate Depletion Effect Reduction and Flat-band Voltage Control in Poly-Si/HfAlO_x MOSFETs with Nanometer TaN Dots at the Top Interface
- Effects of Aluminum and Nitrogen Profile Control on Electrical Properties of HfAlON Gate Dielectric MOSFETs
- Theoretical Analysis of Interstitial Boron Diffusion and Its Suppression Mechanism with Nitrogen in Amorphous HfO_2
- Flat-band Voltage Tunability and No Depletion Effect of Poly-Si Gate CMOS with Nanometer-size Metal Dots at the Poly-Si/Dielectric Interface
- Impact of Captured-Carrier Distribution on Recovery Characteristics of Positive- and Negative-Bias Temperature Instability in HfSiON/SiO_2 Gate Stack
- Observation of Dipole Layer Formed at High-k Dielectrics/SiO_2 Interface with X-ray Photoelectron Spectroscopy
- Novel Si Quantum Memory Structure with Self-Aligned Stacked Nanocrystalline Dots
- Influence of Channel Depletion on the Carrier Charging Characteristics in Si Nanocrystal Floating Gate Memory
- Experimental Analysis of Carrier Charging Characteristics in Si Nanocrystal Floating Gate Memory
- Permittivity Enhancement of Hf_Si_xO_2 Film with High Temperature Annealing
- Suppression of Stress-Induced Leakage Current of Wet and Dry SiO_2 by SiD_4 Poly-Si Gate Electrode
- Thermal Stability of a Thin HfO_2/Ultrathin SiO_2/Si Structure : Interfacial Si Oxidation and Silicidation
- Enhancement of Dielectric Constant due to Expansion of Lattice Spacing in CeO_2 Directly Grown on Si(111)
- Deuterium Effect on Both Interface-State Generation and Stress-Induced-Leakage-Current under Fowler-Nordheim Electron Injection
- A Study of the Effect of Deuterium on Stress-Induced Leakage Current
- Time Evolution of Mean and Dispersion in Si/SiO_2 Interface States Generation Statistics
- Merits and Demerits of Single Electron Effects in Ultrasmall Semiconductor Devices
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- Merits and Demerits of Single Electron Effects in Ultra-Small Semiconductor Devices
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- Silicon-Atom Induced Fermi-Level Pinning of Fully Silicided Platinum Gates on HfO2 Dielectrics
- Study on Oxynitride Buffer Layers in HfO2 Metal–Insulator–Semiconductor Structures for Improving Metal–Insulator–Semiconductor Field-Effect Transistor Performance
- Direct Measurement of Back-Tunneling Current during Program/Erase Operation of Metal–Oxide–Nitride–Oxide–Semiconductor Memories and Its Dependence on Gate Work Function
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- Advanced Micro-Lithography Process with Chemical Shrink Technology
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- Weak Temperature Dependence of Non-Coulomb Scattering Component of HfAlOx-Limited Inversion Layer Mobility in n+-Polysilicon/HfAlOx/SiO2 N-Channel Metal–Oxide–Semiconductor Field-Effect Transistors
- Suppression of Stress-Induced Leakage Current of Wet and Dry SiO2 by SiD4 Poly-Si Gate Electrode
- Reconsideration of Hydrogen Release at Ultra Thin Gate Oxide Interface
- Thermal Stability of a Thin HfO2/Ultrathin SiO2/Si Structure: Interfacial Si Oxidation and Silicidation