Toriumi Akira | Advanced Lsi Technology Laboratory Toshiba Corporation

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概要

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著作論文

A Guideline for Accurate Two-Frequency Capacitance Measurement for Ultra-Thin Gate Oxides
Analytical Single-Electron Transistor(SET)Model for Design and Analysis of Realistic SET Circuits
New Approach to Negative Differential Conductance with High Peak-to-Valley Ratio in Silicon
Mobility Enhancement of SOI MOSFETs due to Subband Modulation in Ultrathin SOI Films
Mobility Enhancement of SOI MOSFETs Due to Subband Modulation in Ultra-Thin SOI Films
Novel Si Quantum Memory Structure with Self-Aligned Stacked Nanocrystalline Dots
Influence of Channel Depletion on the Carrier Charging Characteristics in Si Nanocrystal Floating Gate Memory
Experimental Analysis of Carrier Charging Characteristics in Si Nanocrystal Floating Gate Memory
Deuterium Effect on Both Interface-State Generation and Stress-Induced-Leakage-Current under Fowler-Nordheim Electron Injection
A Study of the Effect of Deuterium on Stress-Induced Leakage Current
Time Evolution of Mean and Dispersion in Si/SiO_2 Interface States Generation Statistics
Merits and Demerits of Single Electron Effects in Ultrasmall Semiconductor Devices
SET/CMOS Hybrid for Future Low-Power LSI : Experimental Demonstration, Power Estimation, and Strategy for Its Reduction
Study on Zr-Silicate Interfacial Layer of ZrO_2-MIS Structure Fabricated by Pulsed Laser Ablation Deposition Method

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