Merits and Demerits of Single Electron Effects in Ultrasmall Semiconductor Devices
スポンサーリンク
概要
- 論文の詳細を見る
Anomalous telegraphic noise with four-level current fluctuations due to two interactive random telegraph signals (RTSs) in small-area metal-oxide-semiconductor field-effect transistors (MOSFETs) is reported. From the noise pattern and discussions on the charging energy of a trap, the existence of interactive traps is demonstrated. Furthermore, the problem of a floating-dot-gate memory cell is discussed from the viewpoint of the existence of interaction between traps, which implies that the threshold voltage could be affected by the spatial distribution of dots in a multi-dot floating-gate memory cell.
- 社団法人応用物理学会の論文
- 1999-04-30
著者
-
Toriumi Akira
Advanced Lsi Technology Laboratory Toshiba Corporation
-
Toriumi Akira
Advanced Semiconductor Devices Research Laboratories Toshiba Corporation
-
Ohata Akiko
Frontier Research Program The Institute Of Physics And Chemical Research
-
Ohata Akiko
Frontier Research Program Institute Of Physical And Chemical Research
-
Toriumi Akira
Advanced Lsi Technology Laboratory Research & Development Center Toshiba Co.
-
Toriumi Akira
Advanced Lsi Technology Laboratory Corporate R&d Center Toshiba Corporation
関連論文
- Anomalous positive V_ shift in HfAlO_x MOS gate stacks
- Ge/GeO_2 Interface Control with High-Pressure Oxidation for Improving Electrical Characteristics
- Mobility Variations in Mono- and Multi-Layer Graphene Films
- Low Temperature Phosphorus Activation in Germanium through Nickel Germanidation for Shallow n^+/p Junction
- A Significant Shift of Schottky Barrier Heights at Strongly Pinned Metal/Germanium Interface by Inserting an Ultra-Thin Insulating Film
- Grain Size Increase and Field-Effect Mobility Enhancement of Pentacene Thin Films Prepared in a Low-Pressure H_2 Ambient
- Evidence of Electron Trapping Center at Pentacene/SiO_2 Interface
- Origin of Structural Phase Transformation of SiO_2-doped HfO_2
- Advanced Characterization of High-k Gate Stack by Internal Photo Emission (IPE) : Interfacial Dipole and Band Diagram in Al/Hf(Si)O_2/Si MOS Structure
- Effect of Ultra-thin Al_2O_3 Insertion on Fermi-level Pinning at Metal/Ge Interface
- Thermally Robust Germanium MIS Gate Stacks with LaYO_3 Dielectric Film
- Direct Evidence of GeO Volatilization from GeO_2 Films and Impact of Its Suppression on GeO_2/Ge MIS Characteristics
- Reduction of Bias-Induced Threshold Voltage Shift in Pentacene Field Effect Transistors by Interface Modification and Molecular Ordering
- Suppression of Leakage Current and Moisture Absorption of La_2O_3 films with Ultraviolet Ozone Post Treatment
- Excellent Leakage Current of Crystallized Silicon-Doped HfO_2 Films Down to Sub-nm EOT
- A Guideline for Accurate Two-Frequency Capacitance Measurement for Ultra-Thin Gate Oxides
- Two Correlated Mechanisms in Thin SiO_2 Breakdown
- Reliability of Structurally Modified Ultra-Thin Gate Oxides
- Analytical Single-Electron Transistor(SET)Model for Design and Analysis of Realistic SET Circuits
- New Approach to Negative Differential Conductance with High Peak-to-Valley Ratio in Silicon
- Mobility Enhancement of SOI MOSFETs due to Subband Modulation in Ultrathin SOI Films
- Mobility Enhancement of SOI MOSFETs Due to Subband Modulation in Ultra-Thin SOI Films
- Comparative Studies on Oxygen Diffusion Coefficients for Amorphous and γ-Al_2O_3 Films using ^O Isotope
- Importance of Leakage Current Noise Analysis for Accurate Lifetime Prediction of High-k Gate Dielectrics
- Weak Temperature Dependence of Non-Coulomb Scattering Component of HfAlO_x-Limited Inversion Layer Mobility in n^+-Polysilicon/HfAlO_x/SiO_2 N-Channel Metal-Oxide-Semiconductor Field-Effect Transistors
- Silicon-Atom Induced Fermi-Level Pinning of Fully Silicided Platinum Gates on HfO_2 Dielectrics
- Study on Oxynitride Buffer Layers in HfO_2 Metal-Insulator-Semiconductor Structures for Improving Metal-Insulator-Semiconductor Field-Effect Transistor Performance
- Degradation Mechanism of HfAlO_x/SiO_2 Stacked Gate Dielectric Films through Transient and Steady State Leakage Current Analysis
- Impact of Surface Hydrophilicization prior to Atomic Layer Deposition for HfO_2/Si Direct-Contact Gate Stacks
- Impact of Initial Traps on TDDB and NBTI Reliabilities in High-k Gate Dielectrics
- Si-Capped Annealing of HfO_2-based Dielectrics for Suppressing Interface Layer Growth and Oxygen Out-Diffusion
- The first principles calculations of Fermi level pinning in FUSI/PtSi/HfO_2/Si system induced by local distortion of HfO_2
- Theoretical analysis of the Fermi level pinning in HfO_2/Si system induced by the interface defect states
- Gate Depletion Effect Reduction and Flat-band Voltage Control in Poly-Si/HfAlO_x MOSFETs with Nanometer TaN Dots at the Top Interface
- Effects of Aluminum and Nitrogen Profile Control on Electrical Properties of HfAlON Gate Dielectric MOSFETs
- Theoretical Analysis of Interstitial Boron Diffusion and Its Suppression Mechanism with Nitrogen in Amorphous HfO_2
- Flat-band Voltage Tunability and No Depletion Effect of Poly-Si Gate CMOS with Nanometer-size Metal Dots at the Poly-Si/Dielectric Interface
- Observation of Dipole Layer Formed at High-k Dielectrics/SiO_2 Interface with X-ray Photoelectron Spectroscopy
- Novel Si Quantum Memory Structure with Self-Aligned Stacked Nanocrystalline Dots
- Influence of Channel Depletion on the Carrier Charging Characteristics in Si Nanocrystal Floating Gate Memory
- Experimental Analysis of Carrier Charging Characteristics in Si Nanocrystal Floating Gate Memory
- Deuterium Effect on Both Interface-State Generation and Stress-Induced-Leakage-Current under Fowler-Nordheim Electron Injection
- A Study of the Effect of Deuterium on Stress-Induced Leakage Current
- Time Evolution of Mean and Dispersion in Si/SiO_2 Interface States Generation Statistics
- Merits and Demerits of Single Electron Effects in Ultrasmall Semiconductor Devices
- SET/CMOS Hybrid for Future Low-Power LSI : Experimental Demonstration, Power Estimation, and Strategy for Its Reduction
- A New Design Scheme for Logic Circuits with Single Electron Transistors
- Study on Zr-Silicate Interfacial Layer of ZrO_2-MIS Structure Fabricated by Pulsed Laser Ablation Deposition Method
- Impact of TDDB Distribution Function on Lifetime Estimation in Ultra-Thin Gate Oxides
- Reliability Concern of Ultra-Thin Gate Oxides
- High-Electron-Mobility Ge n-Channel Metal-Oxide-Semiconductor Field-Effect Transistors with High-Pressure Oxidized Y_2O_3
- Merits and Demerits of Single Electron Effects in Ultra-Small Semiconductor Devices
- Higher-k Scalability and Leakage Current Reduction of SiO-Doped HfO in Direct Tunneling Regime