High-Electron-Mobility Ge n-Channel Metal-Oxide-Semiconductor Field-Effect Transistors with High-Pressure Oxidized Y_2O_3

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概要

• 論文の詳細を見る
• 2011-06-25

著者

• Lee Choong

  Department Of Anatomy And Cell Biology College Of Veterinary Medicine And Bk21 Program For Veterinar

• Kita Koji

  Department Of Materials Engineering School Of Engineering The University Of Tokyo

• Toriumi Akira

  Department Of Materials Engineering School Of Engineering The University Of Tokyo

• Toriumi Akira

  Mirai-advanced Semiconductor Research Center (mirai-asrc) National Institute Of Advanced Industrial

• Toriumi A

  Univ. Tokyo Tokyo Jpn

• Toriumi Akira

  The Authors Are With Advanced Lsi Technology Laboratory Toshiba Corporation:presently With The Depar

• Toriumi Akira

  Advanced Lsi Technology Toshiba Corporation

• Toriumi Akira

  Department Of Applied Physics University Of Tokyo

• TABATA Toshiyuki

  Department of Materials Engineering, School of Engineering, The University of Tokyo

• NISHIMURA Tomonori

  Department of Materials Engineering, School of Engineering, The University of Tokyo

• Lee Choong

  Department Of Materials Engineering School Of Engineering The University Of Tokyo

• Toriumi Akira

  Advanced Lsi Technology Laboratory Research & Development Center Toshiba Co.

• Nagashio Kosuke

  Department Of Materials Engineering The University Of Tokyo

• Wang Sheng

  Department Of Materials Engineering The University Of Tokyo

• Takahashi Toshitake

  Department Of Materials Engineering School Of Engineering The University Of Tokyo

• Toriumi Akira

  Department Of Materials Engineering The University Of Tokyo

• Toriumi Akira

  Mirai-asrc Aist

• Nishimura Tomonori

  Department Of Chemistry Faculty Of Science Okayama University

• Wang Sheng

  Department Of Applied Chemistry & Biotechnology Fukui University

• Kita Koji

  Department of Material Engineering, The University of Tokyo, Bunkyo, Tokyo 113-8656, Japan

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