Effect of Ultra-thin Al_2O_3 Insertion on Fermi-level Pinning at Metal/Ge Interface

スポンサーリンク

概要

• 論文の詳細を見る
• 2007-09-19

著者

• KITA Koji

  Department of Materials Science, Graduate School of Engineering, The University of Tokyo

• TORIUMI Akira

  Department of Materials Science, Graduate School of Engineering, The University of Tokyo

• Kita Koji

  Department Of Materials Engineering School Of Engineering The University Of Tokyo

• Toriumi Akira

  Department Of Materials Engineering School Of Engineering The University Of Tokyo

• Toriumi Akira

  Mirai-advanced Semiconductor Research Center (mirai-asrc) National Institute Of Advanced Industrial

• Toriumi A

  Univ. Tokyo Tokyo Jpn

• Toriumi Akira

  The Authors Are With Advanced Lsi Technology Laboratory Toshiba Corporation:presently With The Depar

• Toriumi Akira

  Advanced Lsi Technology Toshiba Corporation

• Toriumi Akira

  Department Of Applied Physics University Of Tokyo

• NISHIMURA Tomonori

  Department of Materials Engineering, School of Engineering, The University of Tokyo

• Toriumi Akira

  Advanced Lsi Technology Laboratory Research & Development Center Toshiba Co.

• Toriumi Akira

  Department Of Materials Engineering The University Of Tokyo

• Kita Koji

  Department Of Materials Engineering The University Of Tokyo

• Toriumi Akira

  Mirai-asrc Aist

• Nishimura Tomonori

  Department Of Chemistry Faculty Of Science Okayama University

• Kita Koji

  Department of Material Engineering, The University of Tokyo, Bunkyo, Tokyo 113-8656, Japan

関連論文

• Anomalous positive V_ shift in HfAlO_x MOS gate stacks
• Study of La Concentration Dependent V_ Shift in Metal/HfLaOx/Si Capacitors
• Performance and Degradation in Single Grain-size Pentacene Thin-Film Transistors
• Field-Dependent Mobility of Highly Oriented Pentacene Thin-Film Transistors
• Ge/GeO_2 Interface Control with High-Pressure Oxidation for Improving Electrical Characteristics
• Mobility Variations in Mono- and Multi-Layer Graphene Films
• Low Temperature Phosphorus Activation in Germanium through Nickel Germanidation for Shallow n^+/p Junction
• A Significant Shift of Schottky Barrier Heights at Strongly Pinned Metal/Germanium Interface by Inserting an Ultra-Thin Insulating Film
• Grain Size Increase and Field-Effect Mobility Enhancement of Pentacene Thin Films Prepared in a Low-Pressure H_2 Ambient
• Evidence of Electron Trapping Center at Pentacene/SiO_2 Interface
• Origin of Structural Phase Transformation of SiO_2-doped HfO_2
• Advanced Characterization of High-k Gate Stack by Internal Photo Emission (IPE) : Interfacial Dipole and Band Diagram in Al/Hf(Si)O_2/Si MOS Structure
• Effect of Ultra-thin Al_2O_3 Insertion on Fermi-level Pinning at Metal/Ge Interface
• Thermally Robust Germanium MIS Gate Stacks with LaYO_3 Dielectric Film
• Direct Evidence of GeO Volatilization from GeO_2 Films and Impact of Its Suppression on GeO_2/Ge MIS Characteristics
• Reduction of Bias-Induced Threshold Voltage Shift in Pentacene Field Effect Transistors by Interface Modification and Molecular Ordering
• Suppression of Leakage Current and Moisture Absorption of La_2O_3 films with Ultraviolet Ozone Post Treatment
• Excellent Leakage Current of Crystallized Silicon-Doped HfO_2 Films Down to Sub-nm EOT
• Thermally Robust Y_2O_3/Ge MOS Capacitors
• Moisture Absorption-Induced Permittivity Deterioration and Surface Roughness Enhancement of Lanthanum Oxide Films on Silicon
• Experimental Evidence for Invalidity of Matthiessen's Rule for MOS Inversion Layer Mobility Analysis through Hall Factor Measurement
• Design Methodology for La_2O_3-Based Ternally Higher-κ Dielectrics
• A New Hf-based Dielectric Member, HfLaOx, for Amorphous High-k Gate Insulators in Advanced CMOS
• Generalized Model of Oxidation Mechanism at HfO_2/Si Interface with Post-Deposition Annealing
• Dielectric Constant Increase of Yttrium-Doped HfO_2 by Structural Phase Modification
• Far Infrared Study of Structural Distortion and Transformation of HfO_2 by Introducing a Slight Amount of Si
• Stable Observation of the Evolution of Leakage Spots in HfO_2/SiO_2 stacked structures by UHV-C-AFM
• Difference between O_2 and N_2 Annealing Effects on CVD-SiO_2 Film Quality Studied by the Time-Dependent OCP Measurement
• Advantages of Ge (111) Surface for High Quality HfO_2/Ge Interface
• New Method for Characterizing Dielectric Properties of High-k Films with Time-Dependent Open-Circuit Potential Measurement
• A Guideline for Accurate Two-Frequency Capacitance Measurement for Ultra-Thin Gate Oxides
• Two Correlated Mechanisms in Thin SiO_2 Breakdown
• Reliability of Structurally Modified Ultra-Thin Gate Oxides
• Analytical Single-Electron Transistor(SET)Model for Design and Analysis of Realistic SET Circuits
• New Approach to Negative Differential Conductance with High Peak-to-Valley Ratio in Silicon
• Mobility Enhancement of SOI MOSFETs due to Subband Modulation in Ultrathin SOI Films
• Mobility Enhancement of SOI MOSFETs Due to Subband Modulation in Ultra-Thin SOI Films
• Observation of Oxide Thickness Dependent Interface Roughness in Si MOS Structure
• Comparative Studies on Oxygen Diffusion Coefficients for Amorphous and γ-Al_2O_3 Films using ^O Isotope
• Importance of Leakage Current Noise Analysis for Accurate Lifetime Prediction of High-k Gate Dielectrics
• Weak Temperature Dependence of Non-Coulomb Scattering Component of HfAlO_x-Limited Inversion Layer Mobility in n^+-Polysilicon/HfAlO_x/SiO_2 N-Channel Metal-Oxide-Semiconductor Field-Effect Transistors
• Silicon-Atom Induced Fermi-Level Pinning of Fully Silicided Platinum Gates on HfO_2 Dielectrics
• Study on Oxynitride Buffer Layers in HfO_2 Metal-Insulator-Semiconductor Structures for Improving Metal-Insulator-Semiconductor Field-Effect Transistor Performance
• Degradation Mechanism of HfAlO_x/SiO_2 Stacked Gate Dielectric Films through Transient and Steady State Leakage Current Analysis
• Impact of Surface Hydrophilicization prior to Atomic Layer Deposition for HfO_2/Si Direct-Contact Gate Stacks
• Impact of Initial Traps on TDDB and NBTI Reliabilities in High-k Gate Dielectrics
• Si-Capped Annealing of HfO_2-based Dielectrics for Suppressing Interface Layer Growth and Oxygen Out-Diffusion
• The first principles calculations of Fermi level pinning in FUSI/PtSi/HfO_2/Si system induced by local distortion of HfO_2
• Theoretical analysis of the Fermi level pinning in HfO_2/Si system induced by the interface defect states
• Gate Depletion Effect Reduction and Flat-band Voltage Control in Poly-Si/HfAlO_x MOSFETs with Nanometer TaN Dots at the Top Interface
• Effects of Aluminum and Nitrogen Profile Control on Electrical Properties of HfAlON Gate Dielectric MOSFETs
• Theoretical Analysis of Interstitial Boron Diffusion and Its Suppression Mechanism with Nitrogen in Amorphous HfO_2
• Flat-band Voltage Tunability and No Depletion Effect of Poly-Si Gate CMOS with Nanometer-size Metal Dots at the Poly-Si/Dielectric Interface
• Observation of Dipole Layer Formed at High-k Dielectrics/SiO_2 Interface with X-ray Photoelectron Spectroscopy
• Novel Si Quantum Memory Structure with Self-Aligned Stacked Nanocrystalline Dots
• Experimental Analysis of Carrier Charging Characteristics in Si Nanocrystal Floating Gate Memory
• Permittivity Enhancement of Hf_Si_xO_2 Film with High Temperature Annealing
• Thermal Stability of a Thin HfO_2/Ultrathin SiO_2/Si Structure : Interfacial Si Oxidation and Silicidation
• Interfacial Dipole at High-$k$ Dielectric/SiO2 Interface: X-ray Photoelectron Spectroscopy Characteristics
• Deuterium Effect on Both Interface-State Generation and Stress-Induced-Leakage-Current under Fowler-Nordheim Electron Injection
• A Study of the Effect of Deuterium on Stress-Induced Leakage Current
• Time Evolution of Mean and Dispersion in Si/SiO_2 Interface States Generation Statistics
• From Ballistic to Coulomb Blockade Transport in Si Metal Oxide Semiconductor Field Effect Transisters
• Merits and Demerits of Single Electron Effects in Ultrasmall Semiconductor Devices
• Power Consumption of Hybrid Circuits of Single-Electron Transistors and Complementary Metal-Oxide-Semiconductor Field-Effect Transistors
• Silicon Planar Esaki Diode Operating at Room Temperature
• SET/CMOS Hybrid for Future Low-Power LSI : Experimental Demonstration, Power Estimation, and Strategy for Its Reduction
• Challenge to new silicon devices
• Isotope Tracing Study of GeO Desorption Mechanism from GeO2/Ge Stack Using 73Ge and 18O
• Junctionless Ge p-Channel Metal--Oxide--Semiconductor Field-Effect Transistors Fabricated on Ultrathin Ge-on-Insulator Substrate
• A New Design Scheme for Logic Circuits with Single Electron Transistors
• Study on Zr-Silicate Interfacial Layer of ZrO_2-MIS Structure Fabricated by Pulsed Laser Ablation Deposition Method
• Impact of TDDB Distribution Function on Lifetime Estimation in Ultra-Thin Gate Oxides
• Reliability Concern of Ultra-Thin Gate Oxides
• Incommensurate Periodic Lattice Distortion Perpendicular to the Layer in 1T-VSe_2
• High-Electron-Mobility Ge n-Channel Metal-Oxide-Semiconductor Field-Effect Transistors with High-Pressure Oxidized Y_2O_3
• Density-of-states limited contact resistance in graphene field-effect transistors (Selected topics in applied physics: Technology, physics, and modeling of graphene devices)
• A Method of Evaluating the Rate Constant of the Thermal Isomerization of 6-SO_3^--spiropyran by Using β-Cyclodextrin
• Higher-k Scalability and Leakage Current Reduction of SiO-Doped HfO in Direct Tunneling Regime
• Variation of Surface Roughness on Ge Substrate by Cleaning in Deionized Water and its Influence on Electrical Properties in Ge MetalOxideSemiconductor Field-Effect Transistors
• Internal Photoemission over HfO2 and Hf(1-x)SixO2 High-$k$ Insulating Barriers: Band Offset and Interfacial Dipole Characterization
• Higher-k Scalability and Leakage Current Reduction of SiO2-Doped HfO2 in Direct Tunneling Regime
• Experimental and Analytical Characterization of Dual-Gated Germanium Junctionless p-Channel Metal--Oxide--Semiconductor Field-Effect Transistors
• Comprehensive Study of the X-Ray Photoelectron Spectroscopy Peak Shift of La-Incorporated Hf Oxide for Gate Dielectrics
• Counter Dipole Layer Formation in Multilayer High-k Gate Stacks
• Effect of High-Pressure Inert Gas Annealing on AlON/Ge Gate Stacks
• Kinetic Effects of O-Vacancy Generated by GeO2/Ge Interfacial Reaction
• Oxygen-Related Degradation Mechanisms for On- and Off-States of Perfluoropentacene Thin-Film Transistors
• Direct Evidence of GeO Volatilization from GeO2/Ge and Impact of Its Suppression on GeO2/Ge Metal–Insulator–Semiconductor Characteristics
• Study of La-Induced Flat Band Voltage Shift in Metal/HfLaOx/SiO2/Si Capacitors
• Suppression of Leakage Current and Moisture Absorption of La2O3 Films with Ultraviolet Ozone Post Treatment
• Threshold-Voltage-Shift Mechanism in Pentacene Field Effect Transistors Caused by Photoirradiation
• Systematic Investigation of the Intrinsic Channel Properties and Contact Resistance of Monolayer and Multilayer Graphene Field-Effect Transistor
• Oxidation Rate Reduction of Ge with O_2 Pressure Increase
• Observation of the Creation and Annihilation of Local Current Paths in HfO2 Thin Films on Pt by Ultrahigh-Vacuum Conductive Atomic Force Microscopy: Evidence of Oxygen Spill Over during the Forming Process
• Kinetic Model of Si Oxidation at HfO2/Si Interface with Post Deposition Annealing
• Step and Terrace Formation on Ge(111) Surface in H_2 Annealing

もっと見る 閉じる

スポンサーリンク