Theoretical Analysis of Interstitial Boron Diffusion and Its Suppression Mechanism with Nitrogen in Amorphous HfO_2

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概要

• 論文の詳細を見る
• 2004-09-15

著者

• Nabatame Toshihide

  Mirai-association Of Super-advanced Electronics Technologies (mirai-aset) National Institute Of Adva

• Nabatame T

  Aist Tsukuba Jpn

• Nabatame Toshihide

  Mirai-aset Advanced Industrial Science And Technology (aist)

• Nabatame Toshihide

  Mirai Project Association Of Super-advanced Electronics Technology (aset)

• Toriumi Akira

  Mirai-advanced Semiconductor Research Center (mirai-asrc) National Institute Of Advanced Industrial

• Toriumi A

  Univ. Tokyo Tokyo Jpn

• Toriumi Akira

  The Authors Are With Advanced Lsi Technology Laboratory Toshiba Corporation:presently With The Depar

• Toriumi Akira

  Advanced Lsi Technology Toshiba Corporation

• IKEDA Minoru

  MIRAI-ASET

• Toriumi Akira

  Mirai Advanced Semiconductor Research Center (asrc) National Institute Of Advanced Industrial Scienc

• Kresse Georg

  Institut Fur Materialphysik Univeisitat Wien

• Toriumi Akira

  Advanced Lsi Technology Laboratory Research & Development Center Toshiba Co.

• Toriumi Akira

  Department Of Materials Engineering The University Of Tokyo

• Toriumi Akira

  Mirai-asrc Aist

• Ikeda Minoru

  MIRAI, Association of Super-Advanced Electronics Technologies (ASET), Tsukuba, Ibaraki 305-8569, Japan

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