Thermal Stability of a Thin HfO_2/Ultrathin SiO_2/Si Structure : Interfacial Si Oxidation and Silicidation

スポンサーリンク

概要

• 論文の詳細を見る
• Publication Office, Japanese Journal of Applied Physics, Faculty of Science, University of Tokyoの論文
• 2003-02-15

著者

• Nabatame Toshihide

  Mirai-association Of Super-advanced Electronics Technologies (mirai-aset) National Institute Of Adva

• Nabatame Toshihide

  Hitachi Research Laboratory Hitachi Ltd.

• Nabatame Toshihide

  Mirai Project Association Of Super-advanced Electronics Technology (aset)

• Toriumi Akira

  Mirai-advanced Semiconductor Research Center (mirai-asrc) National Institute Of Advanced Industrial

• Toriumi A

  Mirai Project Advanced Semiconductor Research Center (asrc)

• HORIKAWA Tsuyoshi

  MIRAI-ASRC, AIST

• Toriumi Akira

  Mirai Advanced Semiconductor Research Center (asrc) National Institute Of Advanced Industrial Scienc

• MIYATA Noriyuki

  MIRAI, Advanced Semiconductor Research Center, National Institute of Advanced Industrial Science and

• Ichikawa Masakazu

  Mirai Project Advanced Semiconductor Research Center (asrc)

• Horikawa Tsuyoshi

  Mirai Project Association Of Super-advanced Electronics Technology (aset)

• Miyata Noriyuki

  Mirai Project Advanced Semiconductor Research Center (asrc)

• Nabatame Toshihide

  Superconductivity Research Laboratory International Superconductivity Technology Center

関連論文

• Anomalous positive V_ shift in HfAlO_x MOS gate stacks
• Study of La Concentration Dependent V_ Shift in Metal/HfLaOx/Si Capacitors
• Field-Dependent Mobility of Highly Oriented Pentacene Thin-Film Transistors
• Ge/GeO_2 Interface Control with High-Pressure Oxidation for Improving Electrical Characteristics
• Mobility Variations in Mono- and Multi-Layer Graphene Films
• Low Temperature Phosphorus Activation in Germanium through Nickel Germanidation for Shallow n^+/p Junction
• A Significant Shift of Schottky Barrier Heights at Strongly Pinned Metal/Germanium Interface by Inserting an Ultra-Thin Insulating Film
• Grain Size Increase and Field-Effect Mobility Enhancement of Pentacene Thin Films Prepared in a Low-Pressure H_2 Ambient
• Evidence of Electron Trapping Center at Pentacene/SiO_2 Interface
• Origin of Structural Phase Transformation of SiO_2-doped HfO_2
• Advanced Characterization of High-k Gate Stack by Internal Photo Emission (IPE) : Interfacial Dipole and Band Diagram in Al/Hf(Si)O_2/Si MOS Structure
• Effect of Ultra-thin Al_2O_3 Insertion on Fermi-level Pinning at Metal/Ge Interface
• Thermally Robust Germanium MIS Gate Stacks with LaYO_3 Dielectric Film
• Direct Evidence of GeO Volatilization from GeO_2 Films and Impact of Its Suppression on GeO_2/Ge MIS Characteristics
• Reduction of Bias-Induced Threshold Voltage Shift in Pentacene Field Effect Transistors by Interface Modification and Molecular Ordering
• Suppression of Leakage Current and Moisture Absorption of La_2O_3 films with Ultraviolet Ozone Post Treatment
• Excellent Leakage Current of Crystallized Silicon-Doped HfO_2 Films Down to Sub-nm EOT
• Thermally Robust Y_2O_3/Ge MOS Capacitors
• Moisture Absorption-Induced Permittivity Deterioration and Surface Roughness Enhancement of Lanthanum Oxide Films on Silicon
• Comparison of Transport Properties between Tl-(1223) and Tl-(2223) Phases of Tl-Ba-Ca-Cu-O Systems
• The Anisotropy of Transport Critical Current Densities in Tl_2Ba_2Ca_2Cu_3O_x Thin Films under Magnetic Fields up to 20 T
• Properties of Tl_2Ba_2Ca_2Cu_3O_x Thin Films with a Critical Temperature of 122 K Prepared by Excimer Laser Ablation
• Design Methodology for La_2O_3-Based Ternally Higher-κ Dielectrics
• A New Hf-based Dielectric Member, HfLaOx, for Amorphous High-k Gate Insulators in Advanced CMOS
• Generalized Model of Oxidation Mechanism at HfO_2/Si Interface with Post-Deposition Annealing
• Dielectric Constant Increase of Yttrium-Doped HfO_2 by Structural Phase Modification
• Far Infrared Study of Structural Distortion and Transformation of HfO_2 by Introducing a Slight Amount of Si
• Stable Observation of the Evolution of Leakage Spots in HfO_2/SiO_2 stacked structures by UHV-C-AFM
• Difference between O_2 and N_2 Annealing Effects on CVD-SiO_2 Film Quality Studied by the Time-Dependent OCP Measurement
• Advantages of Ge (111) Surface for High Quality HfO_2/Ge Interface
• A Guideline for Accurate Two-Frequency Capacitance Measurement for Ultra-Thin Gate Oxides
• Two Correlated Mechanisms in Thin SiO_2 Breakdown
• Reliability of Structurally Modified Ultra-Thin Gate Oxides
• Analytical Single-Electron Transistor(SET)Model for Design and Analysis of Realistic SET Circuits
• New Approach to Negative Differential Conductance with High Peak-to-Valley Ratio in Silicon
• Mobility Enhancement of SOI MOSFETs due to Subband Modulation in Ultrathin SOI Films
• Mobility Enhancement of SOI MOSFETs Due to Subband Modulation in Ultra-Thin SOI Films
• Observation of Oxide Thickness Dependent Interface Roughness in Si MOS Structure
• Comparative Studies on Oxygen Diffusion Coefficients for Amorphous and γ-Al_2O_3 Films using ^O Isotope
• Comparative Studies on Oxygen Diffusion Coefficients for Amorphous and γ-Al2O3 Films using 18O Isotope
• Importance of Leakage Current Noise Analysis for Accurate Lifetime Prediction of High-k Gate Dielectrics
• Weak Temperature Dependence of Non-Coulomb Scattering Component of HfAlO_x-Limited Inversion Layer Mobility in n^+-Polysilicon/HfAlO_x/SiO_2 N-Channel Metal-Oxide-Semiconductor Field-Effect Transistors
• Silicon-Atom Induced Fermi-Level Pinning of Fully Silicided Platinum Gates on HfO_2 Dielectrics
• Study on Oxynitride Buffer Layers in HfO_2 Metal-Insulator-Semiconductor Structures for Improving Metal-Insulator-Semiconductor Field-Effect Transistor Performance
• Degradation Mechanism of HfAlO_x/SiO_2 Stacked Gate Dielectric Films through Transient and Steady State Leakage Current Analysis
• Properties of Ruthenium Films Prepared by Liquid Source Metalorganic Chemical Vapor Deposition Using Ru(EtCp)_2 with Tetrahydrofuran Solvent
• Conformal Platinum Electrodes Prepared by Chemical Vapor Deposition Using a Liquid MeCpPtMe_3 Precursor in an Oxidizing Atmosphere
• Magnetic Field Dependence of Critical Current Density of Polycrystalline Tl-2223 Wire
• Impact of Surface Hydrophilicization prior to Atomic Layer Deposition for HfO_2/Si Direct-Contact Gate Stacks
• Impact of Initial Traps on TDDB and NBTI Reliabilities in High-k Gate Dielectrics
• Si-Capped Annealing of HfO_2-based Dielectrics for Suppressing Interface Layer Growth and Oxygen Out-Diffusion
• The first principles calculations of Fermi level pinning in FUSI/PtSi/HfO_2/Si system induced by local distortion of HfO_2
• Theoretical analysis of the Fermi level pinning in HfO_2/Si system induced by the interface defect states
• Gate Depletion Effect Reduction and Flat-band Voltage Control in Poly-Si/HfAlO_x MOSFETs with Nanometer TaN Dots at the Top Interface
• Effects of Aluminum and Nitrogen Profile Control on Electrical Properties of HfAlON Gate Dielectric MOSFETs
• Theoretical Analysis of Interstitial Boron Diffusion and Its Suppression Mechanism with Nitrogen in Amorphous HfO_2
• Flat-band Voltage Tunability and No Depletion Effect of Poly-Si Gate CMOS with Nanometer-size Metal Dots at the Poly-Si/Dielectric Interface
• Observation of Dipole Layer Formed at High-k Dielectrics/SiO_2 Interface with X-ray Photoelectron Spectroscopy
• Ruthenium Films Prepared by Liquid Source Metalorganic Chemical Vapor Deposition Using Ru(dpm)_3 Dissolved with Tetrahydrofuran Solvent : Surfaces, Interfaoes, and Films
• Novel Si Quantum Memory Structure with Self-Aligned Stacked Nanocrystalline Dots
• Experimental Analysis of Carrier Charging Characteristics in Si Nanocrystal Floating Gate Memory
• Permittivity Enhancement of Hf_Si_xO_2 Film with High Temperature Annealing
• Electrical and Thermal Stability Characteristics of HfCN Films as Metal Gate-Electrode Synthesized by Metalorganic Chemical Vapor Deposition
• High Temperature Annealing-Induced Phase Transformation Characteristic of Nitrogen-Rich Hafnium Nitride Films
• Physical and Electrical Characteristics of HfN Metal Gate Electrode Synthesized by Post-Rapid Thermal Annealing-assisted MOCVD
• Fabrication of Hf(C)N Films on SiO_2 by Metal Organic Chemical Vapor Deposition (MOCVD) Using TDEAHf Precursor
• The Fabrication of Hafnium Nitride by Metal Organic Chemical Vapor Deposition (MOCVD) Using TDEAHf Precursor for Gate-Electrode Application
• Thermal Stability of a Thin HfO_2/Ultrathin SiO_2/Si Structure : Interfacial Si Oxidation and Silicidation
• Power Consumption of Hybrid Circuits of Single-Electron Transistors and Complementary Metal-Oxide-Semiconductor Field-Effect Transistors
• Silicon Planar Esaki Diode Operating at Room Temperature
• SET/CMOS Hybrid for Future Low-Power LSI : Experimental Demonstration, Power Estimation, and Strategy for Its Reduction
• Challenge to new silicon devices
• Abrupt Lateral-Source Heterostructures with Relaxed/Strained Layers for Ballistic Complementary Metal Oxide Semiconductor Transistors Fabricated by Local O+ Ion-Induced Relaxation Technique of Strained Substrates
• A New Design Scheme for Logic Circuits with Single Electron Transistors
• High-Electron-Mobility Ge n-Channel Metal-Oxide-Semiconductor Field-Effect Transistors with High-Pressure Oxidized Y_2O_3
• Preparation and Transport Properties of TlBa_2Ca_2Cu_3O_y Thin Films by Metalorganic Deposition
• Effect of Y content in (TaC)1-xYx gate electrodes on flatband voltage control for Hf-based high-k gate stacks (Special issue: Dielectric thin films for future electron devices: science and technology)
• Properties of Tl_2Ba_2Ca_1Cu_2O_x Thin Films Prepared on Polycrystalline Yttria-Stabilized Zirconia Substrate with a T_c of 106 K and a J_c of 1.7×10^4 A/cm^2 by Dual-Magnetron Sputtering and Post Annealing
• Silicon-Atom Induced Fermi-Level Pinning of Fully Silicided Platinum Gates on HfO2 Dielectrics
• Study on Oxynitride Buffer Layers in HfO2 Metal–Insulator–Semiconductor Structures for Improving Metal–Insulator–Semiconductor Field-Effect Transistor Performance
• The Fabrication of Hafnium Nitride by Metal Organic Chemical Vapor Deposition (MOCVD) Using TDEAHf Precursor for Gate-Electrode Application
• Low-Threshold-Voltage HfOxN p-Channel Metal–Oxide–Semiconductor Field-Effect Transistors with Partially Silicided Platinum Gate Electrode
• Performance Improvement of HfAlOxN n-Channel Metal–Oxide–Semiconductor Field-Effect Transistors by Controlling the Bonding Configuration of Nitrogen Atoms Coordinated to Hf Atoms
• Weak Temperature Dependence of Non-Coulomb Scattering Component of HfAlOx-Limited Inversion Layer Mobility in n+-Polysilicon/HfAlOx/SiO2 N-Channel Metal–Oxide–Semiconductor Field-Effect Transistors
• Fabrication of Hf(C)N Films on SiO2 by Metal Organic Chemical Vapor Deposition (MOCVD) Using TDEAHf Precursor
• Thermal Stability of a Thin HfO2/Ultrathin SiO2/Si Structure: Interfacial Si Oxidation and Silicidation
• Electrical and Thermal Stability Characteristics of HfCN Films as Metal Gate-Electrode Synthesized by Metalorganic Chemical Vapor Deposition

もっと見る 閉じる

スポンサーリンク