Silicon-Atom Induced Fermi-Level Pinning of Fully Silicided Platinum Gates on HfO2 Dielectrics
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概要
- 論文の詳細を見る
Fully silicided platinum gates have been proposed as metal gate electrodes for scaled complementary metal oxide semiconductor field-effect transistors (CMOSFETs). The Pt monosilicide (PtSi) phase was formed on gate dielectrics by a full silicidation reaction at 400°C. PtSi gate electrodes on SiO2 possess a high effective work function of 4.9 eV, which could be used as a possible metal gate electrode for p-MOSFETs, while at the PtSi/HfO2 interface, Fermi-level pinning is observed independent of the PtSi fabrication process. The Fermi-level pinning at the PtSi/HfO2 interface is comparable to that at the poly-Si/HfO2 interface, and Fermi-level pinning does not occur at the Pt/HfO2 interface. These results show that Fermi-level pinning is induced by the presence of silicon atoms at the HfO2 upper interface.
- 2005-04-15
著者
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Yasuda Naoki
Mirai-aset Aist
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Nabatame Toshihide
Mirai Project Association Of Super-advanced Electronics Technology (aset)
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Tominaga Koji
Mirai-aset Aist
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AKIYAMA Koji
MIRAI-ASET
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IKEDA Minoru
MIRAI-ASET
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Toriumi Akira
Mirai Advanced Semiconductor Research Center (asrc) National Institute Of Advanced Industrial Scienc
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MISE Nobuyuki
MIRAI, Association of Super-Advanced Electronics Technologies (ASET)
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MIGITA Shinji
MIRAI, Advanced Semiconductor Research Center (ASRC), National Institute of Advanced Industrial Scie
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IWAMOTO Kunihiko
MIRAI, Association of Super-Advanced Electronics Technologies (ASET)
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Kadoshima Masaru
Mirai Association Of Super-advanced Electronics Technologies (aset)
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Satake Hideki
Mirai Association Of Super-advanced Electronics Technologies (aset)
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Toriumi Akira
MIRAI, Advanced Semiconductor Research Center (ASRC), National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, Ibaraki 305-0046, Japan
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Migita Shinji
MIRAI, Advanced Semiconductor Research Center (ASRC), National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, Ibaraki 305-0046, Japan
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Migita Shinji
MIRAI Project, Nanoelectronics Research Institute (NeRI), National Institute of Advanced Industrial Sciences and Technology (AIST), Tsukuba West, Tsukuba, Ibaraki 305-8569, Japan
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Akiyama Koji
MIRAI, Association of Super-Advanced Electronics Technologies (ASET), Tsukuba, Ibaraki 305-8569, Japan
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Ikeda Minoru
MIRAI, Association of Super-Advanced Electronics Technologies (ASET), Tsukuba, Ibaraki 305-8569, Japan
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Tominaga Koji
MIRAI, Association of Super-Advanced Electronics Technologies (ASET), AIST Tsukuba SCR Building, Tsukuba, Ibaraki 305-8569, Japan
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Yasuda Naoki
MIRAI, Association of Super-Advanced Electronics Technologies (ASET), Tsukuba, Ibaraki 305-8569, Japan
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Yasuda Naoki
MIRAI, Association of Super-Advanced Electronics Technologies (ASET), AIST Tsukuba SCR Building, Tsukuba, Ibaraki 305-8569, Japan
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