Weak Temperature Dependence of Non-Coulomb Scattering Component of HfAlOx-Limited Inversion Layer Mobility in n+-Polysilicon/HfAlOx/SiO2 N-Channel Metal–Oxide–Semiconductor Field-Effect Transistors
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概要
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We propose a new extraction method for mobility limited by high-$k$ dielectrics, and discuss the scattering mechanism for halfnium aluminate (HfAlOx) in the strong inversion region. In our method, mobility degradation properties are evaluated as a function of interfacial SiO2 thickness. The temperature dependence of the mobility in the strong inversion region is analyzed with the expression $1/\mu=1/\mu_{\text{R}}\exp(-2k_{\text{F}}T_{\text{int}})+1/\mu_{\text{SiO$_{2}$/Si}}$, where $\mu$ is the measured mobility, $\mu_{\text{R}}$ is the prefactor mobility limited by a high-$k$ dielectric, $k_{\text{F}}$ is the Fermi wavenumber of the channel carriers, $T_{\text{int}}$ is the thickness of the interfacial SiO2 layer, and $\mu_{\text{SiO$_{2}$/Si}}$ is the mobility for n+poly-Si/SiO2 n-channel metal–oxide–semiconductor field-effect transistors (MOSFETs). This analysis method is applied to n+poly-Si/HfAlOx [$\text{Hf/(Hf+Al)}=60$ at. %]/SiO2/p-Si n-channel MOSFETs. It is found that the mobility limited by the HfAlOx film, $\mu_{\text{R}}$, decreases with a temperature increase in the range of 77–297 K. This temperature dependence indicates the predominance of non-Coulomb scattering for the mobility limited by HfAlOx in the strong inversion region. The mobility due to the non-Coulomb scattering shows a weak temperature dependence that is explainable by surface optical phonons (i.e., those appearing at the Si-surface channel region due to the longitudinal-optical (LO) modes of HfAlOx) with the corresponding transverse-optical (TO) phonon energy in the range of 10–20 meV.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2005-11-15
著者
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Yasuda Naoki
Mirai-aset Aist
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Ota Hiroyuki
Mirai-advanced Semiconductor Research Center (mirai-asrc) National Institute Of Advanced Industrial
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Toriumi Akira
Mirai Advanced Semiconductor Research Center (asrc) National Institute Of Advanced Industrial Scienc
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HISAMATSU Hirokazu
MIRAI, Association of Super-Advanced Electronics Technologies (ASET)
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Mizubayashi Wataru
MIRAI, Advanced Semiconductor Research Center (ASRC), National Institute of Advanced Industrial Science and Technology (AIST), AIST Tsukuba SCR Building, Tsukuba, Ibaraki 305-8569, Japan
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Mizubayashi Wataru
MIRAI Project, Nanoelectronics Research Institute (NeRI), National Institute of Advanced Industrial Sciences and Technology (AIST), Tsukuba West, Tsukuba, Ibaraki 305-8569, Japan
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Hisamatsu Hirokazu
MIRAI, Association of Super-Advanced Electronics Technologies (ASET), AIST Tsukuba SCR Building, Tsukuba, Ibaraki 305-8569, Japan
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Yasuda Naoki
MIRAI, Association of Super-Advanced Electronics Technologies (ASET), AIST Tsukuba SCR Building, Tsukuba, Ibaraki 305-8569, Japan
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Ota Hiroyuki
MIRAI, Advanced Semiconductor Research Center (ASRC), National Institute of Advanced Industrial Science and Technology (AIST), AIST Tsukuba SCR Building, Tsukuba, Ibaraki 305-8569, Japan
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Ota Hiroyuki
MIRAI Project, Nanoelectronics Research Institute (NeRI), National Institute of Advanced Industrial Sciences and Technology (AIST), Tsukuba West, Tsukuba, Ibaraki 305-8569, Japan
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Toriumi Akira
MIRAI, Advanced Semiconductor Research Center (ASRC), National Institute of Advanced Industrial Science and Technology (AIST), AIST Tsukuba SCR Building, Tsukuba, Ibaraki 305-8569, Japan
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