Mizubayashi Wataru | MIRAI Project, Nanoelectronics Research Institute (NeRI), National Institute of Advanced Industrial Sciences and Technology (AIST), Tsukuba West, Tsukuba, Ibaraki 305-8569, Japan

スポンサーリンク

概要

関連著者

もっと見る

著作論文

Anomalous positive V_ shift in HfAlO_x MOS gate stacks
Degradation Mechanism of HfAlO_x/SiO_2 Stacked Gate Dielectric Films through Transient and Steady State Leakage Current Analysis
Effects of Aluminum and Nitrogen Profile Control on Electrical Properties of HfAlON Gate Dielectric MOSFETs
Effect of Ge Metal–Insulator–Semiconductor Interfacial Layers on Interface Trap Density near the Conduction Band Edge
Fabrication of Direct-Contact Higher-k HfO2 Gate Stacks by Oxygen-Controlled Cap Post-Deposition Annealing
Extremely Scaled ({\sim}0.2 nm) Equivalent Oxide Thickness of Higher-k (k = 40) HfO2 Gate Stacks Prepared by Atomic Layer Deposition and Oxygen-Controlled Cap Post-Deposition Annealing
Weak Temperature Dependence of Non-Coulomb Scattering Component of HfAlOx-Limited Inversion Layer Mobility in n+-Polysilicon/HfAlOx/SiO2 N-Channel Metal–Oxide–Semiconductor Field-Effect Transistors

スポンサーリンク