OGAWA Arito | MIRAI-ASET
スポンサーリンク
概要
関連著者
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Nabatame Toshihide
Mirai Project Association Of Super-advanced Electronics Technology (aset)
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Ota Hiroyuki
Mirai-advanced Semiconductor Research Center (mirai-asrc) National Institute Of Advanced Industrial
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Toriumi Akira
Mirai Advanced Semiconductor Research Center (asrc) National Institute Of Advanced Industrial Scienc
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Kadoshima Masaru
Mirai Association Of Super-advanced Electronics Technologies (aset)
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OGAWA Arito
MIRAI-ASET
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Ota Hiroyuki
MIRAI Project, Nanoelectronics Research Institute (NeRI), National Institute of Advanced Industrial Sciences and Technology (AIST), Tsukuba West, Tsukuba, Ibaraki 305-8569, Japan
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Ogawa Arito
MIRAI, Association of Super-Advanced Electronics Technologies (ASET), Tsukuba, Ibaraki 305-8569, Japan
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Nabatame Toshihide
Mirai-association Of Super-advanced Electronics Technologies (mirai-aset) National Institute Of Adva
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Nabatame T
Aist Tsukuba Jpn
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Nabatame Toshihide
Mirai-aset Advanced Industrial Science And Technology (aist)
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Toriumi Akira
Mirai-advanced Semiconductor Research Center (mirai-asrc) National Institute Of Advanced Industrial
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Toriumi A
Univ. Tokyo Tokyo Jpn
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Toriumi Akira
The Authors Are With Advanced Lsi Technology Laboratory Toshiba Corporation:presently With The Depar
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KADOSHIMA Masaru
MIRAI, Association of Super-Advanced Electronics Technologies (ASET)
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IWAMOTO Kunihiko
MIRAI, Association of Super-Advanced Electronics Technologies (ASET)
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Toriumi Akira
Advanced Lsi Technology Laboratory Research & Development Center Toshiba Co.
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Satake Hideki
Mirai Association Of Super-advanced Electronics Technologies (aset)
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Ota Hiroyuki
Mirai-advanced Semiconductor Research Center (mirai-asrc) National Institute Of Advanced Industrial
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岡田 健治
半導体MIRAI-ASET
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Okada K
Yamaguchi Univ. Yamaguchi Jpn
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岡田 健治
松下電器産業(株)
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OKADA Kenji
MIRAI-ASET, AIST
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SATAKE Hideki
MIRAI, Association of Super-Advanced Electronics Technologies (ASET)
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TAKAHASHI Masashi
MIRAI-ASET
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Satake Hideki
Mirai-aset Aist
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Iwamoto Kunihiko
Mirai-aset
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Toriumi Akira
Mirai-asrc Aist
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Toriumi Akira
Mirai-advanced Semiconductor Research Center (mirai-asrc) National Institute Of Advanced Industrial
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Toriumi Akira
Department Of Materials Engineering School Of Engineering The University Of Tokyo
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Toriumi Akira
Advanced Lsi Technology Toshiba Corporation
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MIZUBAYASHI Wataru
MIRAI-ASRC
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IKEDA Minoru
MIRAI-ASET
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HORIKAWA Tsuyoshi
MIRAI-ASRC, AIST
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MISE Nobuyuki
MIRAI, Association of Super-Advanced Electronics Technologies (ASET)
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Toriumi Akira
Department Of Materials Engineering The University Of Tokyo
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Hayashi T
Mirai-asrc-aist
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Horikawa Tsuyoshi
Mirai Project Association Of Super-advanced Electronics Technology (aset)
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Horikawa Tsuyoshi
Mirai-asrc Aist
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Mise Nobuyuki
MIRAI, Association of Super-Advanced Electronics Technologies (ASET), Tsukuba, Ibaraki 305-8569, Japan
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Satake Hideki
MIRAI, Association of Super-Advanced Electronics Technologies (ASET), Tsukuba, Ibaraki 305-8569, Japan
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Nabatame Toshihide
MIRAI, Association of Super-Advanced Electronics Technologies (ASET), Tsukuba, Ibaraki 305-8569, Japan
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Kadoshima Masaru
MIRAI, Association of Super-Advanced Electronics Technologies (ASET), Tsukuba, Ibaraki 305-8569, Japan
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Toriumi Akira
MIRAI, Advanced Semiconductor Research Center (ASRC), National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, Ibaraki 305-0046, Japan
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Mizubayashi Wataru
MIRAI Project, Nanoelectronics Research Institute (NeRI), National Institute of Advanced Industrial Sciences and Technology (AIST), Tsukuba West, Tsukuba, Ibaraki 305-8569, Japan
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Ikeda Minoru
MIRAI, Association of Super-Advanced Electronics Technologies (ASET), Tsukuba, Ibaraki 305-8569, Japan
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Ota Hiroyuki
MIRAI, Advanced Semiconductor Research Center (ASRC), National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, Ibaraki 305-0046, Japan
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Iwamoto Kunihiko
MIRAI, Association of Super-Advanced Electronics Technologies (ASET), Tsukuba, Ibaraki 305-8569, Japan
著作論文
- Impact of Initial Traps on TDDB and NBTI Reliabilities in High-k Gate Dielectrics
- Si-Capped Annealing of HfO_2-based Dielectrics for Suppressing Interface Layer Growth and Oxygen Out-Diffusion
- Effects of Aluminum and Nitrogen Profile Control on Electrical Properties of HfAlON Gate Dielectric MOSFETs
- Low-Threshold-Voltage HfOxN p-Channel Metal–Oxide–Semiconductor Field-Effect Transistors with Partially Silicided Platinum Gate Electrode