Low-Threshold-Voltage HfOxN p-Channel Metal–Oxide–Semiconductor Field-Effect Transistors with Partially Silicided Platinum Gate Electrode

概要

論文の詳細を見る
HfOxN p-channel metal–oxide–semiconductor field-effect transistors (MOSFETs) with a low threshold voltage ($|V_{\text{th}}|$) were successfully fabricated using a partially silicided (PASI) platinum gate electrode for scaled complementary MOS (CMOS). The PASI platinum (PASI-PtSi) gate electrode is composed of a monoclinic-Pt3Si phase in the vicinity of a HfOxN dielectric. The reduced silicon content of the PASI gate electrodes is effective in suppressing the Fermi-level pinning on the Hf-based gate dielectrics which induces a significant $|V_{\text{th}}|$ shift in p-channel MOSFETs. It is shown that the $|V_{\text{th}}|$ of HfOxN p-channel MOSFETs with the PASI-PtSi gate electrode is sufficiently low and applicable to low-standby-power devices. The mobility of the holes at 0.8 MV/cm is as high as about 90% of the universal mobility. It is concluded that the PASI technology in which the gate electrode has a reduced silicon content is useful for scaled CMOSs.
Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
2006-08-15