Experimental Clarification of Hydrogen-related Mechanism in NBT Degradation
スポンサーリンク
概要
- 論文の詳細を見る
- 2004-09-15
著者
-
Mitani Yuichiro
Advanced Lsi Technology Laboratory Corporate R&d Center Toshiba Corporation
-
Satake Hideki
Mirai Association Of Super-advanced Electronics Technologies (aset)
-
Satake Hideki
Mirai Project Association Of Super-advanced Electronics Technologies (aset) Aist
関連論文
- A Guideline for Accurate Two-Frequency Capacitance Measurement for Ultra-Thin Gate Oxides
- Two Correlated Mechanisms in Thin SiO_2 Breakdown
- Reliability of Structurally Modified Ultra-Thin Gate Oxides
- Degradation Mechanism of HfAlO_x/SiO_2 Stacked Gate Dielectric Films through Transient and Steady State Leakage Current Analysis
- Precipitation of Boron in Highly Boron-Doped Silicon
- Si-Capped Annealing of HfO_2-based Dielectrics for Suppressing Interface Layer Growth and Oxygen Out-Diffusion
- The first principles calculations of Fermi level pinning in FUSI/PtSi/HfO_2/Si system induced by local distortion of HfO_2
- Gate Depletion Effect Reduction and Flat-band Voltage Control in Poly-Si/HfAlO_x MOSFETs with Nanometer TaN Dots at the Top Interface
- Effects of Aluminum and Nitrogen Profile Control on Electrical Properties of HfAlON Gate Dielectric MOSFETs
- Oxide-Mediated Solid Phase Epitaxy(OMSPE)of Silicon : A New Low-Temperature Epitaxy Technique Using Intentionally Grown Native Oxide
- Impact of Captured-Carrier Distribution on Recovery Characteristics of Positive- and Negative-Bias Temperature Instability in HfSiON/SiO_2 Gate Stack
- Influences of initial bulk traps on Negative Bias Temperature Instability of HfSiON
- Exact Trap Level Estimation of HfSiON Films with Various Atomic Compositions
- Suppression of Stress-Induced Leakage Current of Wet and Dry SiO_2 by SiD_4 Poly-Si Gate Electrode
- Double Junction Tunnel using Si Nanocrystalline Layer for Nonvolatile Memory Devices
- Deuterium Effect on Both Interface-State Generation and Stress-Induced-Leakage-Current under Fowler-Nordheim Electron Injection
- A Study of the Effect of Deuterium on Stress-Induced Leakage Current
- Time Evolution of Mean and Dispersion in Si/SiO_2 Interface States Generation Statistics
- Method of Decoupling the Bias Temperature Instability Component from Hot Carrier Degradation in Ultrathin High-$k$ Metal–Oxide–Semiconductor Field-Effect Transistors
- Experimental Clarification of Hydrogen-related Mechanism in NBT Degradation
- Evidence of Electrical and Structural Evolution of Gate Dielectric Breakdown Observed by Conductive Atomic Force Microscopy
- Silicon-Atom Induced Fermi-Level Pinning of Fully Silicided Platinum Gates on HfO2 Dielectrics
- Low-Threshold-Voltage HfOxN p-Channel Metal–Oxide–Semiconductor Field-Effect Transistors with Partially Silicided Platinum Gate Electrode
- Suppression of Stress-Induced Leakage Current of Wet and Dry SiO2 by SiD4 Poly-Si Gate Electrode
- Reconsideration of Hydrogen Release at Ultra Thin Gate Oxide Interface