Reconsideration of Hydrogen Release at Ultra Thin Gate Oxide Interface
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概要
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In this work, hydrogen release under an applied negative bias temperature (NBT) stress voltage was investigated by comparing interface-state generation between p+- and n+-gate/p-channel metal–oxide–silicon field effect transistors (pMOSFETs). Deuterium incorporation into gate dielectrics was also utilized to study hydrogen release at the Si/SiO2 interface. As results, it was found that interface-state generation in n+-gate/pMOSFET is more pronounced than that in p+-gate/pMOSFET even under the same stress oxide voltage. Furthermore, the elimination of interface-state generation by deuterium incorporation is observed only in the case of n+-gate/pMOSFETs, whereas no isotope effect is observed in p+-gate/pMOSFETs. The correlation between injected electrons and interface trap generation was investigated considering the flux and energy of injected electrons. In conclusion, at least two kinds of hydrogen release contribute to the interface-state generation under NBT stressing. One is Si–H bond breakage by injected energetic electrons from gate electrodes. The other is the non-predomination of such energetic electrons in hydrogen release.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2008-03-25
著者
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Mitani Yuichiro
Advanced Lsi Technology Laboratory Corporate R&d Center Toshiba Corporation
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Satake Hideki
Advanced Lsi Technology Laboratory Corporate R&d Center Toshiba Corporation
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Mitani Yuichiro
Advanced LSI Technology Laboratory, Corporate R&D Center, Toshiba Corporation, 8 Shinsugita-cho, Isogo-ku, Yokohama 235-8522, Japan
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