Study on Zr-Silicate Interfacial Layer of ZrO_2-MIS Structure Fabricated by Pulsed Laser Ablation Deposition Method

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概要

• 論文の詳細を見る
• 2000-08-28

著者

• Toriumi Akira

  Advanced Lsi Technology Laboratory Toshiba Corporation

• Toriumi Akira

  Advanced Lsi Technology Laboratory Research & Development Center Toshiba Co.

• Satake Hideki

  Advanced Lsi Technology Laboratory Corporate R&d Center Toshiba Corporation

• Yamaguchi Takeshi

  Advanced Lsi Technology Laboratory Corporate R&d Center Toshiba Corporation

• Toriumi Akira

  Advanced Lsi Technology Laboratory Corporate R&d Center Toshiba Corporation

関連論文

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• Origin of Structural Phase Transformation of SiO_2-doped HfO_2
• Advanced Characterization of High-k Gate Stack by Internal Photo Emission (IPE) : Interfacial Dipole and Band Diagram in Al/Hf(Si)O_2/Si MOS Structure
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