Extraction of Interface State Density in Ultra-Thin Gate Dielectrics : A Composition Method of Ideal CV Curves in High-Frequency CV Analysis
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概要
- 論文の詳細を見る
- 2001-09-25
著者
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Yasuda Naoki
Advanced Lsi Technology Laboratory Research & Development Center Toshiba Co.
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Yasuda Naoki
Advanced Lsi Technology Laboratory Toshiba Corporation
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Satake Hideki
Advanced Lsi Technology Laboratory Toshiba Corporation
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Satake Hideki
Advanced Lsi Technology Laboratory Corporate R&d Center Toshiba Corporation
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