Direct Growth of Single Crystalline CeO_2 High-k Gate Dielectrics
スポンサーリンク
概要
- 論文の詳細を見る
- 2001-09-25
著者
-
Nakata Y
Fujitsu Ltd. Atsugi Jpn
-
Yasuda N
Tokyo Inst. Technol. Tokyo
-
Nishikawa Y
Toshiba Corp. Kawasaki Jpn
-
Nishikawa Y
Materials And Devices Research Laboratories Toshiba Corporation
-
Nishikawa Yukie
Advanced Lsi Technology Laboratory Corporate Research & Development Center Toshiba Corporation
-
Nishikawa Yukie
Corporate Research & Development Center Toshiba Corporation
-
FUKUSHIMA Noburu
Advanced LSI Technology Laboratory, Corporate Research & Development Center, Toshiba Corporation
-
Yasuda Naoki
Advanced Lsi Technology Laboratory Research & Development Center Toshiba Co.
-
Yasuda Naoki
Corporate Research & Development Center Toshiba Corporation
-
Fukushima Noburu
Advanced Lsi Technology Laboratory Corporate R&d Center Toshiba Corporation
-
Fukushima N
Corporate Research & Development Center Toshiba Corporation
関連論文
- Optical Polarization Properties of InAs/GaAs Quantum Dot Semiconductor Optical Amplifier
- Size, density, and shape of InAs quantum dots in closely stacked multilayers grown by the Stranski-Krastanow mode
- Polarization-Independent Photoluminescence from Columnar InAs/GaAs Self-Assembled Quantum Dots : Semiconductors
- Lattice Deformation and Ga Diffusion Concerning InAs Self-Assembled Quantum Dots on GaAs(100) as a Function of Growth Interruption Time
- Quantum-Dot Semiconductor Optical Amplifiers for High Bit-Rate Signal Processing over 40Gbit/s
- A Model of Carrier Capturing and Recombination Process in Quantum-Dot System : Influence of Excitation Power on Spontaneous Emission Intensity and Lifetime
- InAs Self-Assembled Quantum Dots Coupled with GaSb Monolayer Quantum Well
- Lasing Characteristics and Carrier Dynamics of 1.3-μm InGaAs/GaAs Quantum Dot Lasers
- Quantum Dot Infrared Photodetector Using Modulation Doped InAs Self-Assembled Quantum Dots
- Effect of Size Fluctuations on the Photoluminescence Spectral Linewidth of Closely Stacked InAs Self-Assembled Quantum Dot Structures
- Crystallographic Properties of Closely Stacked InAs Quantum Dots Investigated by Ion Channeling
- Threading Dislocations in Multilayer Structure of InAs Self-Assembled Quantum Dots
- Dynamic Properties of InAs Self-Assembled Quantum Dots Evaluated by Capacitance-Voltage Measurements
- Interdiffusion between InAs Quantum Dots and GaAs Matrices
- Narrow Photoluminescemce Line Width of Closely Stacked InAs Self-Assembled Quantum Dot Structures
- Self-Formed InGaAs Quantum Dot Lasers with Multi-Stacked Dot Layer
- New Optical Memory Structure Using Self-Assembled InAs Quantum Dots
- Time-Resolved Study of Carrier Transfer among InAs/GaAs Multi-Coupled Quantum Dots
- Stacked InAs Self-Assembled Quantum Dots on (001) GaAs Grown by Molecular Beam Epitaxy
- InAs/GaAs Multi-Coupled Quantum Dots Structure Enabling High-Intensity, Near-1.3-μm Emission due to Cascade Carrier Tunneling
- Electron Spin-relaxation Dynamics in GaAs/AlGaAs Quantum Wells and InGaAs/InP Quantum Wells
- Performance of All-Optical Switch Utilizing the Spin-Dependent Transient Rotation in a Multiple-Quantum-Well Etalon
- Large Lateral Modulation in InAs/GaAs In-Plane Strained Superlattice on Slightly Misoriented (110) InP Substrate
- Stacked InAs Self-Assembled Quantum Dots on (001) GaAs Grown by Molecular Beam Epitaxy
- Quantum Dots Infrared Photodetector Using Modulation Doped InAs Self-Assembled Quantum Dots
- The Influence of Surface Treatment on the Quality of Pd/Au Contacts to p-type ZnSe
- Surface Preparation Effects for Molecular Beam Epitaxial Growth of ZnSe Layers on InGaP Layers
- Highly Reliable Operation of InGaP/InGaAlP Multi-Quantum-Well Visible Laser Diodes
- High-Power InGaAIP Laser Diodes for High-Density Optical Recording : Visible Lasers
- High-Power InGaAlP Laser Diodes for High-Density Optical Recording
- Reliable High-Power Operation of InGaAlP Visible Light Laser Diodes with Strained Active Layer
- Influence of Gas Pressure on Sputtering Deposition of Epitaxial BaTiO_3 Thin Films
- Improvement of Ferroelectric Hysteresis Curves in Epitaxial BaTiO_3 Film Capacitors by 2-Step Deposition(Special Issue on Nonvolatile Memories)
- Thickness Dependence of Ferroelectricity in Heteroepitaxial BaTiO_3 Thin Film Capacitors
- Dielectric and Ferroelectric Properties of Heteroepitaxial Ba_xSr_TiO_3 Films Grown on SrRuO_3/SrTiO_3 Substrates(Special Issue on Advanced Memory Devices Using High-ε and Ferroelectric Films)
- Relationship between Bond Valence Sums and Pressure Effects on T_c of Oxide Superconductors
- Metal-Insulator Transition in Layered-Perovskite Sr_3V_2O_7
- Bond-Valence-Sum Study on Possible Candidates for High-T_c Oxide Superconductors
- Periodicity Change in Structural Modulation in Bi_2Sr_2Ca_RE_yCu_2O_ (RE = Y, Nd) System
- Effect of Oxygen Content and Sr/Ca Ratio on Superconducting Properties in Bi_2Sr_Ca_Cu_2O : Electrical Properties Condensed Matter
- Electrical and Magnetic Properties in Bi_2Sr_2Ca_Y_xCu_2O : Electrical Properties Condensed Matter
- Transition to an Insulator from a Superconductor due to Substitution of Ca by Rare-earth Elements in Bi_4Sr_4RE_2Cu_4O_ (RE=Nd, Eu, Y) : Electrical Properties of Condensed Matter
- A Guideline for Accurate Two-Frequency Capacitance Measurement for Ultra-Thin Gate Oxides
- Two Correlated Mechanisms in Thin SiO_2 Breakdown
- Reliability of Structurally Modified Ultra-Thin Gate Oxides
- Advanced Micro-Lithography Process for i-line Lithography : Instrumentation, Measurement, and Fabrication Technology
- Advanced Micro-Lithography Process with Chemical Shrink Technology
- Structure of Ultrathin Epitaxial CeO_2 Films Grown on Si(111)
- Electrical Properties of Single Crystalline CeO_2 High-k Gate Dielectrics Directly Grown on Si(111)
- Direct Growth of Single Crystalline CeO_2 High-k Gate Dielectrics
- Effects of Growth Parameters on Oxygen Incorporation into InGaAlP Grown by Metalorganic Chemical Vapor Deposition
- Weak Temperature Dependence of Non-Coulomb Scattering Component of HfAlO_x-Limited Inversion Layer Mobility in n^+-Polysilicon/HfAlO_x/SiO_2 N-Channel Metal-Oxide-Semiconductor Field-Effect Transistors
- Novel Silicone Polymeric Material with High Thermal Stability for Optical Waveguides
- Polyphenylsilsesquioxane Partially-substituted with Germanium : Refractive Index Controllability and Thermal Stability
- A Novel Heat-Resist Silicone Polymeric Material with Refractive Index Controllability
- A Novel Photosensitive Silicone Ladder Polymer: Synthesis, Photochemical, and Thermal Characterstics
- Heeterogeneous Photocatalysis of Poly(4-trifluoromethylpyridine-2,6-diyl)
- Near-1.3-μm High-Intensity Photoluminescence at Room Temperature by InAs/GaAs Multi-Coupled Quantum Dots
- Fast Recovery from Excitonic Absorption Bleaching in Type-II : GaAs/AlGaAs/AlAs Tunneling Biquantum Well
- Quantum Well Width Dependence of Negative Differential Resistance of In_Al_As/In_Ga_As Resonant Tunneling Barriers Grown by MBE
- Extremely High 2DEG Concentration in Selectively Doped In_Ga_As/N-In_Al_As Heterostructures Grown by MBE
- Conduction Band Edge Discontinuity of In_Ga_As/In_(Ga_1 _xAl_x)_As(0≦x≦1) Heterostructures
- MBE Growth of InGaAlAs Lattice-Matched to InP by Pulsed Molecular Beam Method
- Influence of Lattice Distortion and Oxygen Defects in BST Films for Memory Capacitors
- Silicon-Atom Induced Fermi-Level Pinning of Fully Silicided Platinum Gates on HfO_2 Dielectrics
- Study on Oxynitride Buffer Layers in HfO_2 Metal-Insulator-Semiconductor Structures for Improving Metal-Insulator-Semiconductor Field-Effect Transistor Performance
- Degradation Mechanism of HfAlO_x/SiO_2 Stacked Gate Dielectric Films through Transient and Steady State Leakage Current Analysis
- Enhancement of Nitrogen Incorporation in ZnSe Grown on Misoriented GaAs Substrates by Molecular Beam Epitaxy
- Critical Current Density of Wire Type Y-Ba-Cu Oxide Superconductor
- Oxygen Deficiency and Cu Valence States of Supereonducting Y-Ba-Cu Oxide
- Influences of initial bulk traps on Negative Bias Temperature Instability of HfSiON
- Universal thermal activation process and current induced degradation on dielectric breakdown in HfSiO(N)
- High quality La aluminates/Si (100) interface realized by passivation of Si dangling bonds with one monolayer epitaxial SrSi_2
- A Pseudomorphic In_Ga_As/AlAs Resonant Tunneling Barrier with a Peak-to-Valley Current Ratio of 14 at Room Temperature
- Effects of Ambient Gas on Dielectric Constant of Sputtered SrTiO_3 Epitaxial Thin Films
- Enhancement of Dielectric Constant due to Expansion of Lattice Spacing in CeO_2 Directly Grown on Si(111)
- Excellent Negative Differential Resistance of InAlAs/InGaAs Resonant Tunneling Barrier Structures Grown by MBE
- Negative Differential Resistance of Strain-Free InGaAs/AlAsSb Resonant Tunneling Barrier Structures Lattice-Matched to InP
- Dynamics of the Charge Centroid in Metal--Oxide--Nitride--Oxide--Silicon Memory Cells during Avalanche Injection and Fowler--Nordheim Injection Based on Incremental-Step-Pulse Programming
- Electrical Properties of All-Perovskite Oxide (SrRuO_3/Ba_xSr_TiO_3/SrRuO_3) Capacitors
- New Layered Vanadium Oxide with Negative Magnetization, Sr_4V_3O_
- The Relation between Dielectric Constant and Film Composition of Ultra-Thin Silicon Oxynitride Films : Experimental Evaluation and Analysis of Nonlinearity
- Extraction of Interface State Density in Ultra-Thin Gate Dielectrics : A Composition Method of Ideal CV Curves in High-Frequency CV Analysis
- Fabrication of Sub-100 nm Wires and Dots in GaAs/AlGaAs Multiquantum Well Using Focused Ion Beam Lithography
- InGaAlAs /InGaAs and InAlAs/InGaAlAs Quantum-Well Structures Grown by MBE Using Pulsed Molecular Beam Method
- Structure of Ultrathin Epitaxial CeO2 Films Grown on Si(111)
- Direct Measurement of Back-Tunneling Current during Program/Erase Operation of Metal–Oxide–Nitride–Oxide–Semiconductor Memories and Its Dependence on Gate Work Function
- A New Method to Extract the Charge Centroid in the Program Operation of Metal–Oxide–Nitride–Oxide–Semiconductor Memories
- Advanced Micro-Lithography Process with Chemical Shrink Technology