Structure of Ultrathin Epitaxial CeO2 Films Grown on Si(111)
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概要
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The structure of ultrathin epitaxial CeO2 films grown on Si(111) by molecular beam epitaxy was investigated using high-resolution Rutherford backscattering spectroscopy. The observed elemental depth profiles showed that there were oxygen defects in the CeO2 films and the amount of oxygen defects was about 10%. The strain distribution in the CeO2 film was measured using a channeling technique. It was found that the [100] axis of CeO2 was tilted toward the $[2\bar{1}\bar{1}]$ direction by ${\sim}0.7$°. The observed tilt angle was more than twice larger than the expected tilt angle calculated from the lattice mismatch by assuming a pseudomorphic growth of CeO2. The present results suggest that the crystal structure of the CeO2 film was changed from a cubic structure due to the oxygen defects.
- 2004-11-15
著者
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Matsushita Daisuke
Advanced Lsi Technology Laboratory Corporate Research & Development Center Toshiba Corporation
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Nishikawa Yukie
Advanced Lsi Technology Laboratory Corporate Research & Development Center Toshiba Corporation
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SATOU Nobutaka
Toshiba Nanoanalysis Corporation
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Joumori Shinji
Department Of Engineering Physics And Mechanics Kyoto University
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Nakajima Kaoru
Department Of Engineering Physics And Mechanics Kyoto University
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Suzuki Motofumi
Department Of Global Agricultural Sciences Graduate School Of Agricultural And Life Science The Univ
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Yamaguchi Takeshi
Advanced Lsi Technology Laboratory Corporate R&d Center Toshiba Corporation
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Kimura Kenji
Deparment Of Engineering Science Kyoto University
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Kimura Kenji
Department of Engineering Physics and Mechanics, Kyoto University, Kyoto 606-8501, Japan
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Yamaguchi Takeshi
Advanced LSI Technology Laboratory, Toshiba Corporation, 1 Komukai Toshiba-cho, Saiwai-ku, Kawasaki 212-8582, Japan
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Nishikawa Yukie
Advanced LSI Technology Laboratory, Toshiba Corporation, 1 Komukai Toshiba-cho, Saiwai-ku, Kawasaki 212-8582, Japan
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Satou Nobutaka
Toshiba Nanoanalysis Corporation, 1 Komukai Toshiba-cho, Saiwai-ku, Kawasaki 212-8582, Japan
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Suzuki Motofumi
Department of Engineering Physics and Mechanics, Kyoto University, Kyoto 606-8501, Japan
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