Lattice Distortion at SiO2/Si(001) Interface Studied with High-Resolution Rutherford Backscattering Spectroscopy/Channeling

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概要

• 論文の詳細を見る

• The growth-temperature dependence of the transition structure at the SiO2/Si interface is studied by high-resolution Rutherford backscattering spectroscopy/channeling. A Si lattice distortion is found at the interface. Such distortion propagates more than 2 nm from the interface. It is shown that the SiO2/Si grown by wet oxidation at 1100 °C has a smaller lattice distortion than that grown at 900 °C. This can be explained in terms of the relaxation of the strained SiO2 network caused by the viscous flow of SiO2 at high temperatures.

• 2006-04-15

著者

• HATTORI Takeo

  New Industry Creation Hatchery Center, Tohoku University

• Nakajima Kaoru

  Department Of Engineering Physics And Mechanics Kyoto University

• Suzuki Motofumi

  Department Of Global Agricultural Sciences Graduate School Of Agricultural And Life Science The Univ

• Teramoto Akinobu

  New Industry Creation Hatchery Center Tohoku Univ.

• Yamamoto Masashi

  New Industry Creation Hatchery Center Tohoku University

• Ohmi Tadahiro

  New Industry Creation Hatchery Center (niche) Tohoku University

• Kimura Kenji

  Deparment Of Engineering Science Kyoto University

• Teramoto Akinobu

  New Industry Creation Hatchery Center, Tohoku University, Aza-Aoba, Aramaki, Aoba, Sendai 980-8579, Japan

• Teramoto Akinobu

  New Industry Creation Hatchery Center (NICHe), Tohoku University, Sendai 980-8579, Japan

• Hattori Takeo

  New Industry Creation Hatchery Center, Tohoku University, Aza-Aoba, Aramaki, Aoba, Sendai 980-8579, Japan

• Suzuki Motofumi

  Department of Micro Engineering, Kyoto University, Yosida-honmachi, Sakyo, Kyoto 606-8501, Japan

• Suzuki Motofumi

  Department of Engineering Physics and Mechanics, Kyoto University, Kyoto 606-8501, Japan

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