Low Leakage Current and Low Resistivity p^+n Diodes on Si(110) Fabricated by Ga^+/B^+ Combination I/I and Low Temperature Annealing

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概要

• 論文の詳細を見る
• 2006-09-13

著者

• TERAMOTO Akinobu

  New Industry Creation Hatchery Center, Tohoku University

• IMAI Hiroshi

  Graduate School of Science and Engineering, Kagoshima University

• SUGAWA Shigetoshi

  Graduate School of Engineering, Tohoku University

• OHMI Tadahiro

  New Industry Creation Hatchery Center, Tohoku University

• Sugawa S

  Graduate School Of Engineering Tohoku University

• SUGAWA Sigetoshi

  Tohoku University

• Teramoto Akinobu

  New Industry Creation Hatchery Center Tohoku University

• Teramoto Akinobu

  Department Of Electronic Engineering Faculty Of Engineering Tohoku University

• Sugawa Shigetoshi

  Graduate School Of Engineering Tohoku University

• Sugawa Shigetoshi

  Department Of Electronic Engineering Tohoku University

• Ohmi Tadahiro

  New Industry Creation Hatchery Center Future Information Industry Creation Center Tohoku University

• Teramoto Akinobu

  New Industry Creation Hatchery Center Tohoku Univ.

• Teramoto Akinobu

  University Of Tohoku New Industry Creation Hatchery Center (niche)

• Imai Hiroshi

  Graduate School Of Engineering Tohoku University

• Ohmi Tadahiro

  New Industry Creation Hatchery Center (niche) Tohoku University

• Teramoto Akinobu

  New Industry Creation Hatchery Center (NICHe), Tohoku University, Sendai 980-8579, Japan

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