Fast Computational Architectures to Decrease Redundant Calculations : Eliminating Redundant Digit Calculation and Excluding Useless Data (Special Issue on Integrated Electronics and New System Paradigms)

スポンサーリンク

概要

• 論文の詳細を見る

• Current computing systems are too slow for information processing because of the huge number of procedural steps required. A decrease in the number of calculation steps is essential for real-time information processing. We have developed two kinds of novel architectures for automatic elimination of redundant calculation steps. The first architecture employs the new digit-serial algorithm which eliminates redundant lower digit calculations according to the most-significant-digit-first (MSD-first) digit-serial calculation scheme. Basic components based on this architecture, which employ the redundant number system to limit carry propagation, have been developed. The MSD-first sequential vector quantization processor (VQP) is 3.7 times faster than ordinary digital systems as the result of eliminating redundant lower-bit calculation. The second architecture realizes a decrease in the number of complex calculation steps by excluding useless data before executing the complex calculations according to the characterized value of the data. About 90% of Manhattan-distance (MD) calculations in VQP are excluded by estimating the MD from the average distance.

• 社団法人電子情報通信学会の論文
• 1999-09-25

著者

• Imai Makoto

  Department of Cardiology, Kansai Electric Power Hospital

• Kotani Koji

  Department Of Electronic Engineering Graduate School Of Engineering Tohoku University

• OHMI Tadahiro

  New Industry Creation Hatchery Center, Tohoku University

• Ohmi Tadahiro

  New Industry Creation Hatchery Center Future Information Industry Creation Center Tohoku University

• Imai Makoto

  Department Of Cardiology Kansai Electric Power Hospital

• Imai Makoto

  Department Of Electronic Engineering Tohoku University

• Imai M

  Department Of Electronic Engineering Tohoku University

• NOZAWA Toshiyuki

  Department of Electronic Engineering, Graduate School of Engineering, Tohoku University

• FUJIBAYASHI Masanori

  Department of Electronic Engineering, Tohoku University

• Nozawa T

  Department Of Electronic Engineering Tohoku University

• Ohmi Tadahiro

  New Industry Creation Hatchery Center (niche) Tohoku University

• Kotani Koji

  Department Of Electronic Engineering Tohoku University

関連論文

• High current drivability FD-SOI CMOS with low Source/Drain series resistance (Silicon devices and materials)
• 2 Prolonged Postischemic Regional Left Ventricular Delayed Relaxation or Diastolic Stunning in Patients with Coronary Artery Disease Undergoing Percutaneous Coronary Angioplasty(Frontiers in Diagnostic Echocardiography,Symposium 14 (SY-14) (M),The 73rd An
• 2 Prolonged Postischemic Regional Left Ventricular Delayed Relaxation or Diastolic Stunning in Patients with Coronary Artery Disease Undergoing Percutaneous Coronary Angioplasty(Frontiers in Diagnostic Echocardiography,Symposium 14 (SY-14) (M),The 73rd An
• 2 Prolonged Postischemic Regional Left Ventricular Delayed Relaxation or Diastolic Stunning in Patients with Coronary Artery Disease Undergoing Percutaneous Coronary Angioplasty(Frontiers in Diagnostic Echocardiography,Symposium 14 (SY-14) (M),The 73rd An
• High Current Drivability FD-SOI CMOS with Low Source/Drain Series Resistance(Session 9B : Nano-Scale devices and Physics)
• High Current Drivability FD-SOI CMOS with Low Source/Drain Series Resistance(Session 9B : Nano-Scale devices and Physics)
• Subvector-Based Fast Encoding Method for Vector Quantization Without Using Two Partial Variances
• Performance Comparison between Equal-Average Equal-Variance Equal-Norm Nearest Neighbor Search (EEENNS) Method and Improved Equal-Average Equal-Variance Nearest Neighbor Search (IEENNS) Method for Fast Encoding of Vector Quantization(Image Processing and
• Fast Encoding Method for Image Vector Quantization Based on Multiple Appropriate Features to Estimate Euclidean Distance
• A Fast Encoding Method for Vector Quantization Using Modified Memory-Efficient Sum Pyramid
• A Fast Search Method for Vector Quantization Using Enhanced Sum Pyramid Data Structure(Image)
• An Improved Fast Encoding Algorithm for Vector Quantization Using 2-Pixel-Merging Sum Pyramid and Manhattan-Distance-First Check(Image Processing, Image Pattern Recognition)
• A Fast Encoding Method for Vector Quantization Using L_1 and L_2 Norms to Narrow Necessary Search Scope(Image Processing, Image Pattern Recognition)
• A Fast Encoding Method for Vector Quantization Based on 2-Pixel-Merging Sum Pyramid Data Structure(Image)
• A nonlinear cepstral compensation method for noisy speech processing (音声言語情報処理 研究報告 第1回音声言語シンポジウム(SPLC))
• Extracting person's speech individually from original records of meeting by speaker identification technique
• Control of nitrogen profile in radical nitridation of SiO_2 films
• Tribological study for low shear force CMP process on damascene interconnects (シリコン材料・デバイス)
• Fully-Parallel VLSI Implementation of Vector Quantization Processor Using Neuron-MOS Technology (Special Issue on Integrated Electronics and New System Paradigms)
• Impact of fully depleted silicon-on-insulator accumulation-mode CMOS on Si(110) (シリコン材料・デバイス)
• Cross Sections of Charge Exchange for Fast He Ions Passing through Zn Vapor
• Performance Comparison of Ultra-thin FD-SOI Inversion-, Intrinsic- and Accumulation-Mode MOSFETs
• Highly Reliable MOS Trench Gate FET by Oxygen Radical Oxidation
• Improved J-E Characteristics and Stress Induced Leakage Currents (SILC) in Oxynitride Films Grown at 400℃ by Microwave-Excited High-Density Kr/O_2/NH_3 Plasma
• Low Temperature Gate Oxidation MOS Transistor Produced by Kr/O_2 Microwave Excited High-Density Plasma
• Ultra-Thin Silicon Oxynitride Film Grown at Low-Temperature by Microwave-Excited High-Density Kr/O_2/N_2 Plasma
• Ultra-Thin Silicon Oxynitride Films as Cu Diffusion Barrier for Lowering Interconnect Resistivity
• High-Integrity Silicon Oxide Grown at Low-Temperature by Atomic Oxygen Generated in High-Density Krypton Plasma
• Low-Temperature Formation of Silicon Nitride Film by Direct Nitridation Employing High-Density and Low-Energy Ion Bombardment
• Effect of in-situ Formed Interlayer at Ta-SiO_2 interface on Performance and Reliability in Ta-Gate MOS Devices
• A Fine-Grained Programmable Logic Module with Small Amount of Configuration Data for Dynamically Reconfigurable Field-Programmable Gate Array
• 2 Diagnosis of Coronary Artery Disease by Detection of Postischemic Left Ventricular Diastolic Dyssynchrony after Treadmill Exercise Using 2D Speckle Tracking(Symposium 15 (SY-15) (I) New Trends in Echocardiography,Special Program,The 72nd Annual Scientif
• Study on Compositional Transition Layers at Gate Dielectrics/Si Interface by using Angle-resolved X-ray Photoelectron Spectroscopy
• Study on Compositional Transition Layers at Gate Dielectrics/Si Interface by using Angle-resolved X-ray Photoelectron Spectroscopy
• A Technology for Reducing Flicker Noise for ULSI Applications
• High-Quality Silicon Oxide Film Formed by Diffusion Region Plasma Enhanced Chemical Vapor Deposition and Oxygen Radical Treatment Using Microwave-Excited High-Density Plasma
• Downregulation of miR-138 is associated with overexpression of human telomerase reverse transcriptase protein in human anaplastic thyroid carcinoma cell lines
• Thin and Low-Resistivity Tantalum Nitride Diffusion Barrier and Giant-Grain Copper Interconnects for Advanced ULSI Metallization
• Thin and Low-Resistivity Tantalum Nitride Diffusion Barrier and Giant-Grain Copper Interconnects for Advanced ULSI Metallization
• Dopant-Free Channel Transistor with Punchthrough Control Region under Source and Drain
• Nitrogen Profile Study for SiON Gate Dielectrics of Advanced DRAM
• Data Analysis Technique of Atomic Force Microscopy for Atomically Flat Silicon Surfaces
• Low Contact Resistance with Low Schottky Barrier for N-type Silicon Using Yttrium Silicide
• Very Low Bit Error Rate in Flash Memory using Tunnel Dielectrics formed by Kr/O_2/NO Plasma Oxynitridation
• PVD Tantalum Oxide with Buffer Silicon Nitride Stacked High-k MIS Structure Using Low Temperature and High Density Plasma Processing
• Improved Transconductance and Gate Insulator Integrity of MISFETs with Si_3N_4 Gate Dielectric Fabricated by Microwave-Excited High-Density Plasma at 400℃
• Low Resistivity PVD TaNx/Ta/TaNx Stacked Metal Gate CMOS Technology Using Self-Grown bcc-Phased Tantalum on TaNx Buffer Layer
• PJ-275 Coronary Fractional Flow Reserve less than 0.83 is Useful Predictor of Myocardial Ischemia Compared with Postischemic Diastolic Dysfunction(PJ046,Coronary Revascularization, PCI (New Devices/New Technology) 2 (IHD),Poster Session (Japanese),The 73r
• 4 Diagnosis of Unstable Angina by Detection of Postischemic Left Ventricular Diastolic Dyssynchrony Using Strain Image Derived From 2D Speckle Tracking(Echocardiography : Novel Concepts and Technologies in Evaluation of Diastolic Function,Japan-Korea Card
• A Statistical Analysis of Distributions of RTS Characteristics by Wide-Range Sampling Frequencies
• A Statistical Analysis of Distributions of RTS Characteristics by Wide-Range Sampling Frequencies
• A Material of Semiconductor Package with Low Dielectric Constant, Low Dielectric Loss and Flat Surface for High Frequency and Low Power Propagation(Session2: Silicon Devices I)
• A Material of Semiconductor Package with Low Dielectric Constant, Low Dielectric Loss and Flat Surface for High Frequency and Low Power Propagation(Session2: Silicon Devices I)
• The Evaluation of New Amorphous Hydrocarbon Film aCHx, for Copper Barrier Dielectric Film in Low-k Copper Metallization
• Low Dielectric Constant Non-Porous Fluorocarbon Films for Inter-Layer Dielectric
• A High S/N Ratio Object Extraction CMOS Image Sensor with Column Parallel Signal Processing
• A Large-Signal MOSFET Model Based on Transient Carrier Response for RF Circuits
• A High S/N Ratio Object Extraction CMOS Image Sensor with Column Parallel Signal Processing
• Analysis of High-Speed Signal Behavior in a Miniaturized Interconnect(Special Issue on Advanced Sub-0.1μm CMOS Devices)
• Interconnect and Substrate Structure for Gigascale Integration
• Interconnect and Substrate Structure for High Speed Giga-Scale Integration
• Characterization of Zinc Oxide Films Grown by a Newly Developed Plasma Enhanced MOCVD Employing Microwave Excited High Density Plasma
• Damage-Free Microwave-Excited Plasma Contact Hole Etching without Carrier Deactivation at the Interface between Silicide and Heavily-Doped Si
• Angiotensin II and epidermal growth factor receptor cross-talk mediated by a disintegrin and metalloprotease accelerates tumor cell proliferation of hepatocellular carcinoma cell lines
• Influence of Interface Structure on Oxidation Rate of Silicon : Surfaces, Interfaces, and Films
• High-Speed Damage-Free Contact Hole Etching Using Dual Shower Head Microwave-Excited High-Density-Plasma Equipment
• A Study on Reclaimed Photoresist Developer Using an Electrodialysis Method
• A Study on Reclaimed Photoresist Developer Using an Electrodialysis Method
• Ferroelectric Sr_2(Ta_, Nb_x)_2O_7 with a Low Dielectric Constant by Plasma Physical Vapor Deposition and Oxygen Radical Treatment
• Manufacturing Process of Flat Display(Micro Mechanical Engineering)
• Sonoluminescence measurement of 1MHz ultrasonic cavitation and effect of dissolved gases
• Ultra-Shallow and Low-Leakage p^+n Junctions Formation by Plasma Immersion Ion Implantation (PIII) and Low-Temperature Post-Implantation Annealing
• A Dynamically Reconfigurable Processor with Multi-Mode Operation Based on Newly Developed Full-Adder/D-Flip-Flop Merged Module (FDMM)
• Impurity Measurement in Specialty Gases Using an Atmospheric Pressure Ionizaiton Mass Spectrometer with a Two-Compartment Ion Source
• Impurity Measurement in Specialty Gases Using Atmospheric Pressure Ionization Mass Spectrometer with Two Compartments Ion Source
• CROSS SECTION MEASURMENTS IN HIGH-ENERGY H^+ IMPACT-IONIZATION AND FRAGMENTATION OF C_
• Hot-Carrier-Immunity Degradation in Metal Oxide Semiconductor Field Effect Transistors Caused by Ion-Bombardment Processes
• A New Microwave-Excited Plasma Etching Equipment for Separating Plasma Excited Region from Etching Process Region
• A New Two-Step Round Oxidation STI Technology for Highly Reliable Flash Memory
• Habitual snoring in an outpatient population in Japan
• Study of the Metal-Ferroelectric-Insulator-Si Structure Device Formation by Controlling Properties of High Frequency and Microwave Excited Plasma
• MFIS-structure Memory Device with High Quality Ferroelectric Sr_2(Ta_Nb_x)_2O_7 Formed by Physical Vapor Deposition and Oxygen Radical Treatment by Radical Oxygen Assisted Layer by Layer(ROALL) deposition
• A Low-Dielectric-Constant Sr_2(Ta_, Nb_x)_2O_7 Thin Film Controlling the Crystal Orientation on an IrO_2 Substrate for One-Transistor-Type Ferroelectric Memory Device
• A 100 MHz 7.84 mm^2 31.7 msec 439 mW 512-Point 2-Dimensional FFT Single-Chip Processor(Low-Power System LSI, IP and Related Technologies)
• Above-Complementary Metal--Oxide--Semiconductor Metal Pattern Technique for Postfabrication Tuning of On-Chip Inductor Characteristics
• Suppression of the low frequency noise level in (100) and (110) oriented silicon p-MOSFETs induced by an alkali-free cleaning process
• Binary Encounter Peaks for 0゜ Electrons in Collisions between 2MeV/amu Si^ and He
• Rapid eye movement-localized apnea in a female patient with chronic insomnia
• Eliminating Needless Calculations on Circuit Level : Most-Significant-Digit-First Digit-Serial Processing
• Fast Computational Architectures to Decrease Redundant Calculations : Eliminating Redundant Digit Calculation and Excluding Useless Data (Special Issue on Integrated Electronics and New System Paradigms)
• The Effect of Organic Contaminations Molecular Weights in the Cleanroom Air on MOS Devices Degradation - a Controlled laminar Air Flow Experiment
• Modified Membrane Approximation on a Thin Liquid Sheet : Classical Phenomenology and Applications
• C-12-16 A 2-Stage Analog to Digital Converter Combining Successive Approximation and Integrating Techniques
• Extracting person's speech individually from original records of meeting by speaker identification technique
• A Fine-Grained Programmable Logic Module with Small Amount of Configuration Data for Dynamically Reconfigurable Field-Programmable Gate Array
• Postfabrication Independent Inductance and Quality Factor Adjustments of On-Chip Inductors by Above-CMOS Processing for Rapid Prototyping of Radio Frequency System on Chips
• A High S/N Ratio Object Extraction CMOS Image Sensor with Column Parallel Signal Processing
• Stable Readout Circuit for Ferroelectric Random Access Memory Using Complementary Metal–Oxide–Semiconductor-Inverter-Based Capacitive-Feedback Charge-Integration Scheme
• Above-Complementary Metal–Oxide–Semiconductor Inductor for Rapid Prototyping of Mixed-Signal System on Chips
• Interconnect and Substrate Structure for Gigascale Integration

もっと見る 閉じる

スポンサーリンク