Effect of in-situ Formed Interlayer at Ta-SiO_2 interface on Performance and Reliability in Ta-Gate MOS Devices
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概要
- 論文の詳細を見る
- 1999-09-20
著者
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Ohshima Ichiro
Dept. Of E/e Tohoku University
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OHMI Tadahiro
New Industry Creation Hatchery Center, Tohoku University
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Ohshima Ichiro
Department Of Electronic Engineering Graduate School Of Engineering Tohoku University
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USHIKI Takeo
New Industry Creation Hatchery Center, Tohoku University
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KAWAI Kunihiro
Dept. of E/E, Tohoku University
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Ohmi Tadahiro
New Industry Creation Hatchery Center Future Information Industry Creation Center Tohoku University
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Ushiki Takeo
New Industry Creation Hatchery Center Tohoku University
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Kawai Kunihiro
Dept. Of E/e Tohoku University
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Ohmi Tadahiro
New Industry Creation Hatchery Center (niche) Tohoku University
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