Ohshima Ichiro | Dept. Of E/e Tohoku University
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概要
関連著者
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Ohshima Ichiro
Dept. Of E/e Tohoku University
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OHMI Tadahiro
New Industry Creation Hatchery Center, Tohoku University
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Ohshima Ichiro
Department Of Electronic Engineering Graduate School Of Engineering Tohoku University
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Ohmi Tadahiro
New Industry Creation Hatchery Center Future Information Industry Creation Center Tohoku University
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Ohmi Tadahiro
New Industry Creation Hatchery Center (niche) Tohoku University
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Shimada Hiroyuki
New Industry Creation Hatchery Center Tohoku University
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NAKAO Shin-ichi
Department of Chemical System Engineering, Faculty of Engineering, The University of Tokyo
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Nakao Shin-ichi
Department Of Electronic Engineering Graduate School Of Engineering Tohoku University
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Nakao Shin-ichi
Department Of Chemical Engineering Faculty Of Engineering University Of Tokyo
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SUGAWA Shigetoshi
Department of Electronic Engineering, Graduate School of Engineering, Tohoku University
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USHIKI Takeo
New Industry Creation Hatchery Center, Tohoku University
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SUGAWA Sigetoshi
Tohoku University
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SHIMADA Hiroyuki
New Device Development Group, SEIKO EPSON Corporation
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Sugawa Shigetoshi
Graduate School Of Engineering Tohoku University
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Sugawa Shigetoshi
Department Of Electronic Engineering Tohoku University
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Ushiki Takeo
New Industry Creation Hatchery Center Tohoku University
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Nakao Shin-ichi
Department Of Anesthesia Kyoto University Hospital
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SHIMADA Hiroyuki
Department of Ophthalmology, School of Medicine, Nihon University
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HIRAYAMA Masaki
Department of Electronic Engineering, Graduate School of Engineering, Tohoku University
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AHARONI Herzl
New Industry Creation Hatchery Center, Tohoku University
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Cheng Weitao
New Industry Creation Hatchery Center Tohoku University
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KAWAI Kunihiro
Dept. of E/E, Tohoku University
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HIGUCHI Masaaki
TOSHIBA CORPORATION
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HIRAYAMA Masaki
New Industry Creation Hatchery Center, Tohoku University
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NAKAGAWA Munekatsu
Department of Electronic Engineering, Graduate School of Engineering, Tohoku University
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CHENG Weitao
Department of Electronic Engineering, Graduate School of Engineering, Tohoku University
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ONO Yasuhiro
New Device Development Group, SEIKO EPSON Corporation
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Hirayama Masaki
Toshiba Corporation
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Hirayama Masaki
Department Of Electronic Engineering Faculty Of Engineering Tohoku University
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Aharoni Herzl
New Industry Creation Hatchery Center Tohoku University
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Kawai Kunihiro
Dept. Of E/e Tohoku University
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Shimada Hiroyuki
Department Of Geriatrics And Neurology Osaka City University Graduate School Of Medicine
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Ono Yasuhiro
New Device Development Group Seiko Epson Corporation
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Nakagawa Munekatsu
Department Of Electronic Engineering Graduate School Of Engineering Tohoku University
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SHIMADA Hiroyuki
Department of Clinical Pathology, Tokyo Metropolitan Institute of Gerontology
著作論文
- Effect of in-situ Formed Interlayer at Ta-SiO_2 interface on Performance and Reliability in Ta-Gate MOS Devices
- PVD Tantalum Oxide with Buffer Silicon Nitride Stacked High-k MIS Structure Using Low Temperature and High Density Plasma Processing
- Improved Transconductance and Gate Insulator Integrity of MISFETs with Si_3N_4 Gate Dielectric Fabricated by Microwave-Excited High-Density Plasma at 400℃
- Low Resistivity PVD TaNx/Ta/TaNx Stacked Metal Gate CMOS Technology Using Self-Grown bcc-Phased Tantalum on TaNx Buffer Layer