HIGUCHI Masaaki | TOSHIBA CORPORATION

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概要

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著作論文

Highly Reliable MOS Trench Gate FET by Oxygen Radical Oxidation
Improved J-E Characteristics and Stress Induced Leakage Currents (SILC) in Oxynitride Films Grown at 400℃ by Microwave-Excited High-Density Kr/O_2/NH_3 Plasma
Ultra-Thin Silicon Oxynitride Film Grown at Low-Temperature by Microwave-Excited High-Density Kr/O_2/N_2 Plasma
Ultra-Thin Silicon Oxynitride Films as Cu Diffusion Barrier for Lowering Interconnect Resistivity
High-Integrity Silicon Oxide Grown at Low-Temperature by Atomic Oxygen Generated in High-Density Krypton Plasma
Low-Temperature Formation of Silicon Nitride Film by Direct Nitridation Employing High-Density and Low-Energy Ion Bombardment
Ultra-Low-Temperature Formation of Si Nitride Film by Direct Nitridation Employing High-Density and Low-Energy Ion Bombardment
Study on Compositional Transition Layers at Gate Dielectrics/Si Interface by using Angle-resolved X-ray Photoelectron Spectroscopy
Study on Compositional Transition Layers at Gate Dielectrics/Si Interface by using Angle-resolved X-ray Photoelectron Spectroscopy
Electric characteristics of Si_3N_4 films formed by directly radical nitridation on Si (110) and Si (100) surfaces
Improved Transconductance and Gate Insulator Integrity of MISFETs with Si_3N_4 Gate Dielectric Fabricated by Microwave-Excited High-Density Plasma at 400℃
The Evaluation of New Amorphous Hydrocarbon Film aCHx, for Copper Barrier Dielectric Film in Low-k Copper Metallization
Low Dielectric Constant Non-Porous Fluorocarbon Films for Inter-Layer Dielectric
Characterization of Zinc Oxide Films Grown by a Newly Developed Plasma Enhanced MOCVD Employing Microwave Excited High Density Plasma
Damage-Free Microwave-Excited Plasma Contact Hole Etching without Carrier Deactivation at the Interface between Silicide and Heavily-Doped Si
MFIS-structure Memory Device with High Quality Ferroelectric Sr_2(Ta_Nb_x)_2O_7 Formed by Physical Vapor Deposition and Oxygen Radical Treatment by Radical Oxygen Assisted Layer by Layer(ROALL) deposition
Technology of Ferroelectric Thin Film Formation with Large Coercive Field for Future Scaling Down of Ferroelectric Gate FET Memory Device
Formation of Ferroelectric Sr_2(Ta_,Nb_x)_2O_7 Thin Film on Amorphous SiO_2 by Microwave-Excited Plasma Enhanced Metalorganic Chemical Vapor Deposition
Impact of The Improved High Performance Si(110) Oriented MOSFETs by Using Accumulation-Mode Fully Depleted SOI Devices
Impact of High Performance Accumulation-Mode Fully Depleted SOI MOSFETs (先端デバイスの基礎と応用に関するアジアワークショップ(AWAD2005))
Impact of High Performance Accumulation-Mode Fully Depleted SOI MOSFETs (先端デバイスの基礎と応用に関するアジアワークショップ(AWAD2005))

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