HIRAYAMA Masaki | Department of Electronic Engineering, Graduate School of Engineering, Tohoku University
スポンサーリンク
概要
- 同名の論文著者
- Department of Electronic Engineering, Graduate School of Engineering, Tohoku Universityの論文著者
関連著者
-
HIRAYAMA Masaki
Department of Electronic Engineering, Graduate School of Engineering, Tohoku University
-
Hirayama Masaki
Department Of Electronic Engineering Faculty Of Engineering Tohoku University
-
HIGUCHI Masaaki
TOSHIBA CORPORATION
-
HIRAYAMA Masaki
New Industry Creation Hatchery Center, Tohoku University
-
Hirayama Masaki
Toshiba Corporation
-
OHMI Tadahiro
New Industry Creation Hatchery Center, Tohoku University
-
Saito Yuji
Department Of Electronic Engineering Graduate School Of Engineering Tohoku University
-
Ohmi Tadahiro
New Industry Creation Hatchery Center Future Information Industry Creation Center Tohoku University
-
Saito Yuji
Department Of Anesthesiology Gunma Prefectural Cardiovascular Center
-
Ohmi Tadahiro
New Industry Creation Hatchery Center (niche) Tohoku University
-
Ohmi Tadahiro
Department Of Electronic Engineering Graduate School Of Engineering Tohoku University
-
Ohmi Tadahiro
Department Of Electronic Engineering
-
SUGAWA Shigetoshi
Department of Electronic Engineering, Graduate School of Engineering, Tohoku University
-
SEKINE Katsuyuki
Department of Electronic Engineering, Graduate school of Engineering, Tohoku University
-
Saito Y
Department Of Electrical And Electronic Engineering Faculty Of Engineering Mie University
-
SUGAWA Sigetoshi
Tohoku University
-
Sugawa Shigetoshi
Graduate School Of Engineering Tohoku University
-
Sugawa Shigetoshi
Department Of Electronic Engineering Tohoku University
-
Sekine K
Japan Aviation Electronics Ind. Ltd. Tokyo Jpn
-
Sekine Katsuyuki
Department Of Electronic Engineering Faculty Of Engineering Tohoku University
-
斎藤 弥八
名大院工
-
斎藤 弥八
名大工
-
Saito Yahachi
Institute For Materials Research (imr) Tohoku University
-
Saito Yahachi
Department Of Applied Physics Faculty Of Engineering Nagoya Universtiy
-
NAKAO Shin-ichi
Department of Chemical System Engineering, Faculty of Engineering, The University of Tokyo
-
Nakao Shin-ichi
Department Of Electronic Engineering Graduate School Of Engineering Tohoku University
-
Nakao Shin-ichi
Department Of Chemical Engineering Faculty Of Engineering University Of Tokyo
-
AHARONI Herzl
New Industry Creation Hatchery Center, Tohoku University
-
Shindo Wataru
Department of Electronic Engineering, Faculty of Engineering, Tohoku University
-
Aharoni Herzl
New Industry Creation Hatchery Center Tohoku University
-
Hirayama M
Tohoku Univ. Sendai Jpn
-
Shindo W
Tohoku Univ. Sendai Jpn
-
Shindo Wataru
Department Of Electronic Engineering Faculty Of Engineering Tohoku University
-
Nakao Shin-ichi
Department Of Anesthesia Kyoto University Hospital
-
YAMAMOTO Tetsuya
Department of Neurosurgery, Graduate School of Comprehensive Human Sciences, University of Tsukuba
-
Ohshima Ichiro
Dept. Of E/e Tohoku University
-
ANDO Makoto
Department of Electrical and Electronic Engineering, Tokyo Institute of Technology
-
UEDA Naoki
Process Development Laboratory, Sharp Corporation
-
YAMAUCHI Yoshimitsu
Process Development Laboratory, Sharp Corporation
-
OHTSUBO Kazuo
Department of Electronic Engineering, Graduate school of Engineering, Tohoku University
-
NANBU Tetsuhiro
Department of Electronic Engineering, Graduate School of Engineering, Tohoku University
-
Cheng Weitao
New Industry Creation Hatchery Center Tohoku University
-
Ohshima Ichiro
Department Of Electronic Engineering Graduate School Of Engineering Tohoku University
-
SHIMADA Hiroyuki
New Device Development Group, SEIKO EPSON Corporation
-
CHENG Weitao
Department of Electronic Engineering, Graduate School of Engineering, Tohoku University
-
ONO Yasuhiro
New Device Development Group, SEIKO EPSON Corporation
-
CHIEN Nguyen
Department of Electrical and Electronic Engineering, Faculty of Engineering, Tokyo Institute of Tech
-
GOTO Naohisa
Department of Electronics and Systems, Faculty of Engineering, Takushoku University
-
Yamamoto T
Department Of Electrical And Electronic Engineering Faculty Of Engineering Yamagata University
-
Ueda Naoki
Process Development Laboratory Sharp Corporation
-
Goto N
Radial Antenna Laboratory
-
Chien Nguyen
Department Of Electrical And Electronic Engineering Faculty Of Engineering Tokyo Institute Of Techno
-
Ohtsubo Kazuo
Department Of Electronic Engineering Graduate School Of Engineering Tohoku University
-
Yamamoto Tetsuya
Department Of Chemical Engineering Graduate School Of Engineering Hiroshima University
-
Shimada Hiroyuki
New Industry Creation Hatchery Center Tohoku University
-
Nanbu Tetsuhiro
Department Of Electronic Engineering Graduate School Of Engineering Tohoku University
-
Ando Makoto
Department Of Cardiovascular Surgery The Sakakibara Heart Institute
-
Yamauchi Yoshimitsu
Process Development Laboratory Sharp Corporation
-
Ando Makoto
Department Of Cardiovascular Surgery Sakakibara Heart Institute
-
Ando Makoto
Department Of Applied Physics Faculty Of Engineering Tokyo University Of Agriculture And Technology
-
Ono Yasuhiro
New Device Development Group Seiko Epson Corporation
-
Yamamoto Tetsuya
Department Of Astronomy School Of Science The University Of Tokyo
著作論文
- Highly Reliable MOS Trench Gate FET by Oxygen Radical Oxidation
- Improved J-E Characteristics and Stress Induced Leakage Currents (SILC) in Oxynitride Films Grown at 400℃ by Microwave-Excited High-Density Kr/O_2/NH_3 Plasma
- Ultra-Thin Silicon Oxynitride Films as Cu Diffusion Barrier for Lowering Interconnect Resistivity
- Low-Temperature Formation of Silicon Nitride Film by Direct Nitridation Employing High-Density and Low-Energy Ion Bombardment
- Ultra-Low-Temperature Formation of Si Nitride Film by Direct Nitridation Employing High-Density and Low-Energy Ion Bombardment
- Improved Transconductance and Gate Insulator Integrity of MISFETs with Si_3N_4 Gate Dielectric Fabricated by Microwave-Excited High-Density Plasma at 400℃
- Design of Radial Line Slot Antennas at 8.3 GHz for Large Area Uniform Plasma Generation
- Abrupt and Arbitrary Profile Formation in Silicon Using a Low-Kinetic-Energy Ion Bombardment Process
- Impact of High-Precision RF-Plasma Control on Very-Low-Temperature Silicon Epitaxy