Sugawa Shigetoshi | Graduate School Of Engineering Tohoku University

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Sugawa Shigetoshi
Graduate School Of Engineering Tohoku University
SUGAWA Sigetoshi
Tohoku University
Ohmi Tadahiro
New Industry Creation Hatchery Center Future Information Industry Creation Center Tohoku University
OHMI Tadahiro
New Industry Creation Hatchery Center, Tohoku University
Sugawa Shigetoshi
Department Of Electronic Engineering Tohoku University
TERAMOTO Akinobu
New Industry Creation Hatchery Center, Tohoku University
Teramoto Akinobu
New Industry Creation Hatchery Center Tohoku Univ.
Teramoto Akinobu
New Industry Creation Hatchery Center Tohoku University
Sugawa S
Graduate School Of Engineering Tohoku University
SUGAWA Shigetoshi
Graduate School of Engineering, Tohoku University
Hirayama Masaki
New Industry Creation Hatchery Center Tohoku University
Kuroda Rihito
Graduate School Of Engineering Tohoku University
HIGUCHI Masaaki
TOSHIBA CORPORATION
Teramoto Akinobu
Department Of Electronic Engineering Faculty Of Engineering Tohoku University
Hirayama Masaki
Toshiba Corporation
Teramoto A
New Industry Creation Hatchery Center Tohoku University
HIRAYAMA Masaki
New Industry Creation Hatchery Center, Tohoku University
Ohmi T
Tohoku Univ. Sendai‐shi Jpn
Ohmi Tadahiro
The New Industry Creation Hatchery Center (niche) Tohoku University
Goto Tetsuya
New Industry Creation Hatchery Center Tohoku University
TAKAHASHI Ichirou
New Industry Creation Hatchery Center, Tohoku University
大見忠弘
東北大学
Ohmi Tadahiro
Department Of Electronic Engineering Tohoku University
Suwa Tomoyuki
New Industry Creation Hatchery Center Tohoku University
Isogai Tatsunori
Graduate School Of Engineering Tohoku University
Tanaka Hiroaki
New Industry Creation Hatchery Center Tohoku University
SUGAWA Shigetoshi
Department of Electronic Engineering, Graduate School of Engineering, Tohoku University
寺本章伸
東北大学未来科学技術共同研究センター
大見忠弘
東北大学未来科学技術共同研究センター
大見忠弘
東北大学未来科学技術共同研究センター:東北大学wpiリサーチセンター
Cheng Weitao
New Industry Creation Hatchery Center Tohoku University
Teramoto Akinobu
Tohoku Univ. Sendai Jpn
Aharoni Herzl
New Industry Creation Hatchery Center Tohoku University
野平博司
Musashi Institute Of Technology
TANAKA Hiroaki
New Industry Creation Hatchery Center, Tohoku University
Ohmi Tadahiro
Department Of Electronic Engineering Graduate School Of Engineering Tohoku University:(present Addre
AHARONI Herzl
New Industry Creation Hatchery Center, Tohoku University
NOHIRA Hiroshi
Musashi Institute of Technology
ISOGAI Tatsunori
Graduate School of Engineering, Tohoku University
Nohira Hiroshi
Faculty Of Engineering Musashi Institute Of Technology
Nakazawa Hiroshi
New Industry Creation Hatchery Center Tohoku University
Funaiwa Kiyoshi
New Industry Creation Hatchery Center Tohoku University
Sakurai Hiroyuki
New Industry Creation Hatchery Center Tohoku University
Takahashi Ichirou
Graduate School Of Engineering Tohoku University
Shimada Hiroyuki
New Industry Creation Hatchery Center Tohoku University
Abe Kenichi
Graduate School Of Engineering Tohoku University
大見忠弘
東北大学未来科学技術共同研究センター
IMAI Hiroshi
Graduate School of Science and Engineering, Kagoshima University
KURODA Rihito
Graduate School of Engineering, Tohoku University
Ikenaga Eiji
Japan Synchrotron Radiation Research Institute
Hattori Tetsuya
Depaetment Of Electrical And Electronic Engineering Tokyo Institute Of Technology
Saito Yuji
Department Of Electronic Engineering Graduate School Of Engineering Tohoku University
HIRAYAMA Masaki
Department of Electronic Engineering, Graduate School of Engineering, Tohoku University
Saito Y
Department Of Electrical And Electronic Engineering Faculty Of Engineering Mie University
SUWA Tomoyuki
New Industry Creation Hatchery Center, Tohoku University
ARATANI Takashi
Shin-Etsu Chemical Co., Ltd.
HATTORI Takeo
New Industry Creation Hatchery Center, Tohoku University
Hattori Takashi
Central Research Laboratory Hitachi Ltd.
KUMAGAI Yuki
Graduate School of Engineering Tohoku University
Watabe Shunichi
Graduate School of Engineering, Tohoku University
Hirayama Masaki
Department Of Electronic Engineering Faculty Of Engineering Tohoku University
Hattori T
New Industry Creation Hatchery Center Tohoku University
Saito Yuji
Department Of Anesthesiology Gunma Prefectural Cardiovascular Center
Akahane Nana
Graduate School Of Engineering Tohoku University
WEITAO Cheng
Graduate School of Engineering, Tohoku University
Cheng Weitao
Graduate School of Engineering, Tohoku University
Hattori Takeo
Faculty Of Engineering Musashi Institute Of Technology
Shirai Yasuyuki
New Industry Creation Hatchery Center (niche) Tohoku University
Aratani Takashi
Shin-etsu Chemical Co. Ltd.
Hamada Tatsufumi
Graduate School Of Engineering Tohoku University
大川猛
(独)産業技術総合研究所情報技術研究部門
斎藤弥八
名大院工
斎藤弥八
名大工
Ohshima Ichiro
Dept. Of E/e Tohoku University
Kotani K
Department Of Electronic Engineering Graduate School Of Engineering Tohoku University
Kotani Koji
Graduate School Of Engineering Tohoku University
NAKANO Yukihisa
Graduate School of Engineering, Tohoku University
IKENAGA Eiji
Japan Synchrotron Radiation Research Institute/SPring-8
Kotani Koji
Laboratory For Electronic Intelligent Systems Research Institute Of Electrical Communication Tohoku
Saito Yahachi
Institute For Materials Research (imr) Tohoku University
Saito Yahachi
Department Of Applied Physics Faculty Of Engineering Nagoya Universtiy
大川猛
東北大学大学院工学研究科
大川猛
National Institute For Advanced Industrial Science And Technology (aist):information Technology Rese
Ohkawa Takeshi
Department Of Electronic Engineering Tohoku University
SUGAWA Shigetoshi
New Industry Creation Hatchery Center, Tohoku University
OHTSUBO Kazuo
Department of Electronic Engineering, Graduate school of Engineering, Tohoku University
Ohshima Ichiro
Department Of Electronic Engineering Graduate School Of Engineering Tohoku University
USHIO Jiro
Hitachi, Ltd.
HIGUCHI Masaaki
Graduate School of Engineering, Tohoku University
ARATANI Takashi
Graduate School of Engineering, Tohoku University
SHINAGAWA Seiji
Musashi Institute of Technology
Kotani K
Tohoku Univ. Sendai‐shi Jpn
TAKAHASHI Hiroto
Graduate School of Engineering Tohoku University
FUJITA Genya
Graduate School of Engineering Tohoku University
SHIMADA Hiroyuki
New Device Development Group, SEIKO EPSON Corporation
Abe Kenichi
Graduate School of Engineering, Tohoku University
Fujisawa Takafumi
Graduate School of Engineering, Tohoku University
Sugimura Masahiko
Research and Development Center, Zeon Corporation
Kawasaki Masafumi
Research and Development Center, Zeon Corporation
NOZAWA Toshihisa
TOKYO ELECTRON LTD.
MATSUOKA Takaaki
TOKYO ELECTRON LTD.
Inokuchi Atsutoshi
New Industry Creation Hatchery Center Tohoku University
Sugimura Masahiko
Research And Development Center Zeon Corporation
YAMAUCHI Hiroshi
New Industry Creation Hatchery Center, Tohoku University
Ushio Jiro
Hitachi Ltd.
Ohtsubo Kazuo
Department Of Electronic Engineering Graduate School Of Engineering Tohoku University
FUNAIWA Kiyoshi
New Industry Creation Hatchery Center, Tohoku University
Kobayashi Sadao
Taisei Corporation
SAKURAI Hiroyuki
New Industry Creation Hatchery Center, Tohoku University
ISOGAI Tatsunori
New Industry Creation Hatchery Center, Tohoku University
大川猛
National Institute For Advanced Industrial Science And Technology (aist) Information Technology Rese
WAKAYAMA Yoshihide
Department of Electronic Engineering, Tohoku University
AZUMI Keita
New Industry Creation Hatchery Center, Tohoku University
WATABE Syunichi
Graduate School of Engineering, Tohoku University
Lee Woonghee
Graduate School Of Engineering Tohoku University
大川猛
(株)トプスシステムズ
Wakayama Yoshihide
Department Of Electronic Engineering Tohoku University
KUROKI Shin-Ichiro
Graduate School of Engineering, Tohoku University
Yamashita Satoru
New Industry Creation Hatchery Center Tohoku University
Kobayashi Keisuke
JASRI SPring8
NAKAMURA Osamu
Department of Radiological Technology, Faculty of Health Sciences, Nihon Institute of Medical Scienc
Philipossian Ara
University of Arizona
Sampurno Yasa
University of Arizona
Zhuang Yun
University of Arizona
Tanaka Yoshitsugu
Tokyo Electron Ltd. Tokyo Jpn
HATTORI Takeo
Musashi Institute of Technology
Cheng Jiang
Araca Inc.
Mizobuchi Koichi
Disp Development Texas Instruments Japan
Tye Ching
Graduate School Of Engineering Tohoku University
AHARONI Herzl
Department of Electronic Engineering, Faculty of Engineering, Tohoku University
CHENG Weitao
New Industry Creation Hatchery Center, Tohoku University
NAKAO Shin-ichi
Department of Chemical System Engineering, Faculty of Engineering, The University of Tokyo
Nakao Shin-ichi
Department Of Electronic Engineering Graduate School Of Engineering Tohoku University
Nakao Shin-ichi
Department Of Chemical Engineering Faculty Of Engineering University Of Tokyo
UEDA Naoki
Process Development Laboratory, Sharp Corporation
YAMAUCHI Yoshimitsu
Process Development Laboratory, Sharp Corporation
HAMADA Tatsufumi
Department of Electronic Engineering, Graduate school of Engineering, Tohoku University
SEKINE Katsuyuki
Department of Electronic Engineering, Graduate school of Engineering, Tohoku University
HIRAMAYA Masaki
Department of Electronic Engineering, Graduate School of Engineering, Tohoku University
USHIKI Takeo
New Industry Creation Hatchery Center, Tohoku University
ADACHI Satoru
DISP Development, Texas Instruments Japan
LEE Woonghee
Graduate School of Engineering, Tohoku University
AKAHANE Nana
Graduate School of Engineering, Tohoku University
OSHIKUBO Hiromichi
DISP Development, Texas Instruments Japan
HAMADA Tatsufumi
Graduate School of Engineering, Tohoku University
TERAMOTO Akinobu
The New Industry Creation Hatchery Center (NICHe), Tohoku University
HATTORI Takeo
The New Industry Creation Hatchery Center (NICHe), Tohoku University
IKENAGA Eiji
JASRI/SPring8
Akasaka Yasushi
Tokyo Electron Ltd. Tokyo Jpn
TANAKA Hiroaki
Graduate School of Engineering, Tohoku University
MURAKAWA Shigemi
Tokyo Electron Ltd.
TAKEUCHI Masashi
Tokyo Electron AT Ltd.
HONDA Minoru
Tokyo Electron AT Ltd.
ISHIZUKA Shu-ichi
Tokyo Electron AT Ltd.
NAKANISHII Toshio
Tokyo Electron AT Ltd.
HIROTA Yoshihiro
Tokyo Electron AT Ltd.
SUGAWARA Takuya
Tokyo Electron Ltd.
SUGAWA Shigetoshi
Tokyo Electron AT Ltd.
CHENG Weitao
Department of Electronic Engineering, Graduate School of Engineering, Tohoku University
ONO Yasuhiro
New Device Development Group, SEIKO EPSON Corporation
Nakano Yukihisa
Graduate School Of Engineering Tohoku University
INOKUCHI Atsutoshi
New Industry Creation Hatchery Center, Tohoku University
Terasaki Masato
Tokyo Electron Ltd.
WATANABE Kazufumi
Graduate School of Engineering, Tohoku University
TATE Tomoyasu
Graduate School of Engineering, Tohoku University
CHIBA Koji
Graduate School of Engineering, Tohoku University
Moriguchi Makoto
New Industry Creation Hatchery Center Tohoku University
Gaubert Philippe
New Industry Creation Hatchery Center Tohoku University
Nakanishi Toshio
Tokyo Electron At Ltd. Hyogo Jpn
ASAHARA Hirokazu
New Industry Creation Hatchery Center, Tohoku University
TERASAKI Masato
New Industry Creation Hatchery Center, Tohoku University
NAKAZAWA Hiroshi
New Industry Creation Hatchery Center, Tohoku University
YAMANAKA Jiro
New Industry Creation Hatchery Center, Tohoku University
Hayakawa Yukio
New Industry Creation Hatchery Center Tohoku University
TERASAKI Masato
Graduate School of Engineering, Tohoku University
Ueda Naoki
Process Development Laboratory Sharp Corporation
Chiba Koji
Graduate School Of Engineering Tohoku University
Kumagai Yuki
Department Of Applied Physics And Chemistry The University Of Electro-communications
Ushiki Takeo
New Industry Creation Hatchery Center Tohoku University
Tate Tomoyasu
Graduate School Of Engineering Tohoku University
Yamanaka Jiro
New Industry Creation Hatchery Center Tohoku University
Chuanjie Zhong
New Industry Creation Hatchery Center Tohoku University
Konda Masahiro
New Industry Creation Hatchery Center Tohoku University
SHIRAI Yasuyuki
New Industry Creation Hatchery Center, University of Tohoku
Kato Takeyoshi
New Industry Creation Hatchery Center Tohoku University
TSUNODA Tomoya
New Industry Creation Hatchery Center, Tohoku University
YAMADA Atsuhiko
Graduate School of Engineering, Tohoku University
Watanabe Kazufumi
Graduate School Of Engineering Tohoku University
Watanuki Kohei
New Industry Creation Hatchery Center Tohoku University
Akasaka Yasushi
Tokyo Electron Ltd.
YAMASHITA Satoru
New Industry Creation Hatchery Center, Tohoku University
IMAIZUMI Fuminobu
Department of Electronic Engineering, Graduate school of Engineering, Tohoku University
Imaizumi Fuminobu
Department Of Electronic Engineering Graduate School Of Engineering Tohoku University
Oshikubo Hiromichi
Disp Development Texas Instruments Japan
Yamauchi Yoshimitsu
Process Development Laboratory Sharp Corporation
Kawase Kazumasa
Advanced Technology R&d Center Mitsubishi Electric Corporation
Nakao Shin-ichi
Department Of Anesthesia Kyoto University Hospital
Shirai Yasuyuki
New Industry Creation Hatchery Center Tohoku University
Asahara Hirokazu
New Industry Creation Hatchery Center Tohoku University
Tsunoda Tomoya
New Industry Creation Hatchery Center Tohoku University

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著作論文

High Current Drivability FD-SOI CMOS with Low Source/Drain Series Resistance(Session 9B : Nano-Scale devices and Physics)
High Current Drivability FD-SOI CMOS with Low Source/Drain Series Resistance(Session 9B : Nano-Scale devices and Physics)
Tribological study for low shear force CMP process on damascene interconnects (シリコン材料・デバイス)
Impact of fully depleted silicon-on-insulator accumulation-mode CMOS on Si(110) (シリコン材料・デバイス)
Performance Comparison of Ultra-thin FD-SOI Inversion-, Intrinsic- and Accumulation-Mode MOSFETs
Highly Reliable MOS Trench Gate FET by Oxygen Radical Oxidation
Improved J-E Characteristics and Stress Induced Leakage Currents (SILC) in Oxynitride Films Grown at 400℃ by Microwave-Excited High-Density Kr/O_2/NH_3 Plasma
Ultra-Thin Silicon Oxynitride Film Grown at Low-Temperature by Microwave-Excited High-Density Kr/O_2/N_2 Plasma
High Sensitivity Dynamic Range Enhanced CMOS Imager with Noise Suppression
Study on Compositional Transition Layers at Gate Dielectrics/Si Interface by using Angle-resolved X-ray Photoelectron Spectroscopy
Study on Compositional Transition Layers at Gate Dielectrics/Si Interface by using Angle-resolved X-ray Photoelectron Spectroscopy
Electric characteristics of Si_3N_4 films formed by directly radical nitridation on Si (110) and Si (100) surfaces
Nitrogen Profile Study for SiON Gate Dielectrics of Advanced DRAM
Low Contact Resistance with Low Schottky Barrier for N-type Silicon Using Yttrium Silicide
Very Low Bit Error Rate in Flash Memory using Tunnel Dielectrics formed by Kr/O_2/NO Plasma Oxynitridation
Improved Transconductance and Gate Insulator Integrity of MISFETs with Si_3N_4 Gate Dielectric Fabricated by Microwave-Excited High-Density Plasma at 400℃
Low Resistivity PVD TaNx/Ta/TaNx Stacked Metal Gate CMOS Technology Using Self-Grown bcc-Phased Tantalum on TaNx Buffer Layer
A Statistical Analysis of Distributions of RTS Characteristics by Wide-Range Sampling Frequencies
A Statistical Analysis of Distributions of RTS Characteristics by Wide-Range Sampling Frequencies
A Material of Semiconductor Package with Low Dielectric Constant, Low Dielectric Loss and Flat Surface for High Frequency and Low Power Propagation(Session2: Silicon Devices I)
A Material of Semiconductor Package with Low Dielectric Constant, Low Dielectric Loss and Flat Surface for High Frequency and Low Power Propagation(Session2: Silicon Devices I)
A Large-Signal MOSFET Model Based on Transient Carrier Response for RF Circuits
A High S/N Ratio Object Extraction CMOS Image Sensor with Column Parallel Signal Processing
Damage-Free Microwave-Excited Plasma Contact Hole Etching without Carrier Deactivation at the Interface between Silicide and Heavily-Doped Si
Tribological effects of brush scrubbing in post chemical mechanical planarization cleaning on electrical characteristics in novel non-porous low-k dielectric fluorocarbon on Cu interconnects (Special issue: Advanced metallization for ULSI applications)
Electrical characteristics of novel non-porous low-k dielectric fluorocarbon on Cu interconnects for 22nm generation and beyond (Special issue: Advanced metallization for ULSI applications)
Study of the Metal-Ferroelectric-Insulator-Si Structure Device Formation by Controlling Properties of High Frequency and Microwave Excited Plasma
MFIS-structure Memory Device with High Quality Ferroelectric Sr_2(Ta_Nb_x)_2O_7 Formed by Physical Vapor Deposition and Oxygen Radical Treatment by Radical Oxygen Assisted Layer by Layer(ROALL) deposition
Analysis of the Low-Frequency Noise Reduction in Si(100) Metal--Oxide--Semiconductor Field-Effect Transistors
Impact of Channel Direction Dependent Low Field Hole Mobility on (100) Orientation Silicon Surface
A Very Low Dark Current Temperature-Resistant, Wide Dynamic Range, Complementary Metal Oxide Semiconductor Image Sensor
The Effect of Organic Contaminations Molecular Weights in the Cleanroom Air on MOS Devices Degradation - a Controlled laminar Air Flow Experiment
The Effect of Organic Compounds Contamination on the Electrical Characteristics of Ultra-Thin Gate Oxide Films
Technology of Ferroelectric Thin Film Formation with Large Coercive Field for Future Scaling Down of Ferroelectric Gate FET Memory Device
A New Statistical Evaluation Method for the Variation of MOSFETs
Low Leakage Current and Low Resistivity p^+n Diodes on Si(110) Fabricated by Ga^+/B^+ Combination I/I and Low Temperature Annealing
Electrical Properties of Metal-Oxide-Containing SiO2 Films Formed by Organosiloxane Sol–Gel Precursor
Formation of Ferroelectric Sr_2(Ta_,Nb_x)_2O_7 Thin Film on Amorphous SiO_2 by Microwave-Excited Plasma Enhanced Metalorganic Chemical Vapor Deposition
Impact of The Improved High Performance Si(110) Oriented MOSFETs by Using Accumulation-Mode Fully Depleted SOI Devices
A Comparative Examination of Polyoxide Films Performance Grown by Conventional Dry Thermal (900℃) or Plasma Assisted (400℃) Oxidation Techniques
Impact of High Performance Accumulation-Mode Fully Depleted SOI MOSFETs (先端デバイスの基礎と応用に関するアジアワークショップ(AWAD2005))
Impact of High Performance Accumulation-Mode Fully Depleted SOI MOSFETs (先端デバイスの基礎と応用に関するアジアワークショップ(AWAD2005))
Highly reliable radical SiO2 films on atomically flat silicon surface formed by low temperature pure Ar annealing (Special issue: Dielectric thin films for future electron devices: science and technology)
Large-scale test circuits for high-speed and highly accurate evaluation of variability and noise in metal-oxide-semiconductor field-effect transistor electrical characteristics
Anomalous Random Telegraph Signal Extractions from a Very Large Number of n-Metal Oxide Semiconductor Field-Effect Transistors Using Test Element Groups with 0.47 Hz–3.0 MHz Sampling Frequency
Complementary Metal–Oxide–Silicon Field-Effect-Transistors Featuring Atomically Flat Gate Insulator Film/Silicon Interface
High Sensitivity Dynamic Range Enhanced Complementary Metal–Oxide–Semiconductor Imager with Noise Suppression
A New Microwave-Excited Plasma Etching Equipment for Separating Plasma Excited Region from Etching Process Region
Mobile-Ion-Induced Charge Loss Failure in Silicon–Oxide–Nitride–Oxide–Silicon Two-Bit Storage Flash Memory
Impact of Tungsten Capping Layer on Yttrium Silicide for Low-Resistance n+-Source/Drain Contacts
Very Low Bit Error Rate in Flash Memory Using Tunnel Dielectrics Formed by Kr/O2/NO Plasma Oxynitridation
Integration Process Development for Improved Compatibility with Organic Non-Porous Ultralow-k Dielectric Fluorocarbon on Advanced Cu Interconnects
Recovery Characteristics of Anomalous Stress-Induced Leakage Current of 5.6 nm Oxide Films
High-Quality Silicon Oxide Film Formed by Diffusion Region Plasma Enhanced Chemical Vapor Deposition and Oxygen Radical Treatment Using Microwave-Excited High-Density Plasma
A Study on Very High Performance Novel Balanced Fully Depleted Silicon-on-Insulator Complementary Metal–Oxide–Semiconductor Field-Effect Transistors on Si(110) Using Accumulation-Mode Device Structure for Radio-Frequency Analog Circuits
A Low-Dielectric-Constant Sr2(Ta1-x,Nbx)2O7 Thin Film Controlling the Crystal Orientation on an IrO2 Substrate for One-Transistor-Type Ferroelectric Memory Device
Relationship between Sr2(Ta1-x,Nbx)2O7 Crystal Phase and RF-Sputtering Plasma Condition for Metal–Ferroelectric–Insulator–Si Structure Device Formation
Technology of Ferroelectric Thin-Film Formation with Large Coercive Field on Amorphous SiO2 by Ion-Bombardment-Assisted Sputtering and Oxygen Radical Treatment for Future Scaling Down of Ferroelectric Gate Field-Effect Transistor Memory Device
Development of Microwave-Excited Plasma-Enhanced Metal–Organic Chemical Vapor Deposition System for Forming Ferroelectric Sr2(Ta1-x,Nbx)2O7 Thin Film on Amorphous SiO2
Fabrication of Pt/Sr2(Ta1-x,Nbx)2O7/IrO2/SiO2/Si Device with Large Memory Window and Metal–Ferroelectric–Metal–Insulator–Si Field-Effect Transistor
High-Speed Damage-Free Contact Hole Etching Using Dual Shower Head Microwave-Excited High-Density-Plasma Equipment
Electric Characteristics of Si3N4 Films Formed by Directly Radical Nitridation on Si(110) and Si(100) Surfaces
Performance Comparison of Ultrathin Fully Depleted Silicon-on-Insulator Inversion-, Intrinsic-, and Accumulation-Mode Metal–Oxide–Semiconductor Field-Effect Transistors
A 2.8 μm Pixel-Pitch 55 ke
On the Interface Flattening Effect and Gate Insulator Breakdown Characteristic of Radical Reaction Based Insulator Formation Technology
Impact of Improved High-Performance Si(110)-Oriented Metal–Oxide–Semiconductor Field-Effect Transistors Using Accumulation-Mode Fully Depleted Silicon-on-Insulator Devices
Formation and Property of Yttrium and Yttrium Silicide Films as Low Schottcky Barrier material for n-Type Silicon
A Column-Parallel Hybrid Analog-to-Digital Converter Using Successive-Approximation-Register and Single-Slope Architectures with Error Correction for Complementary Metal Oxide Silicon Image Sensors
New Statistical Evaluation Method for the Variation of Metal–Oxide–Semiconductor Field-Effect Transistors

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