Tanaka Hiroaki | New Industry Creation Hatchery Center Tohoku University
スポンサーリンク
概要
関連著者
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Tanaka Hiroaki
New Industry Creation Hatchery Center Tohoku University
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Sugawa Shigetoshi
Graduate School Of Engineering Tohoku University
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Ohmi Tadahiro
New Industry Creation Hatchery Center (niche) Tohoku University
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Teramoto Akinobu
New Industry Creation Hatchery Center (NICHe), Tohoku University, Sendai 980-8579, Japan
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TERAMOTO Akinobu
New Industry Creation Hatchery Center, Tohoku University
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TANAKA Hiroaki
New Industry Creation Hatchery Center, Tohoku University
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SUGAWA Shigetoshi
Graduate School of Engineering, Tohoku University
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OHMI Tadahiro
New Industry Creation Hatchery Center, Tohoku University
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Kuroda Rihito
Graduate School Of Engineering Tohoku University
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Teramoto Akinobu
New Industry Creation Hatchery Center Tohoku Univ.
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Isogai Tatsunori
Graduate School Of Engineering Tohoku University
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Nakao Yukihisa
Graduate School of Engineering, Tohoku University
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Teramoto A
New Industry Creation Hatchery Center Tohoku University
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Sugawa S
Graduate School Of Engineering Tohoku University
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SUGAWA Sigetoshi
Tohoku University
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Goto Tetsuya
New Industry Creation Hatchery Center Tohoku University
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Teramoto Akinobu
New Industry Creation Hatchery Center Tohoku University
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Sugawa Shigetoshi
Department Of Electronic Engineering Tohoku University
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Ohmi Tadahiro
New Industry Creation Hatchery Center Future Information Industry Creation Center Tohoku University
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寺本 章伸
東北大学未来科学技術共同研究センター
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大見 忠弘
東北大学未来科学技術共同研究センター
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大見 忠弘
東北大学未来科学技術共同研究センター:東北大学wpiリサーチセンター
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NAKANO Yukihisa
Graduate School of Engineering, Tohoku University
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KURODA Rihito
Graduate School of Engineering, Tohoku University
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Ohmi T
Tohoku Univ. Sendai‐shi Jpn
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Teramoto Akinobu
Department Of Electronic Engineering Faculty Of Engineering Tohoku University
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Teramoto Akinobu
Tohoku Univ. Sendai Jpn
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Suwa Tomoyuki
New Industry Creation Hatchery Center Tohoku University
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Teramoto Akinobu
University Of Tohoku New Industry Creation Hatchery Center (niche)
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大見 忠弘
東北大学
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大見 忠弘
東北大学 未来科学技術共同研究センター
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Ohmi Tadahiro
Department Of Electronic Engineering Tohoku University
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Ohmi Tadahiro
The New Industry Creation Hatchery Center (niche) Tohoku University
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Ohmi Tadahiro
Department Of Electronic Engineering Graduate School Of Engineering Tohoku University:(present Addre
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SUWA Tomoyuki
New Industry Creation Hatchery Center, Tohoku University
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TANAKA Hiroaki
Graduate School of Engineering, Tohoku University
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ISOGAI Tatsunori
Graduate School of Engineering, Tohoku University
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TAKAHASHI Hiroto
Graduate School of Engineering Tohoku University
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KUMAGAI Yuki
Graduate School of Engineering Tohoku University
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FUJITA Genya
Graduate School of Engineering Tohoku University
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Nakano Yukihisa
Graduate School Of Engineering Tohoku University
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Gaubert Philippe
New Industry Creation Hatchery Center Tohoku University
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Konda Masahiro
New Industry Creation Hatchery Center Tohoku University
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Tanaka Hiroaki
Graduate School Of Engineering The University Of Tokyo
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Shigetoshi Sugawa
Graduate School of Engineering, Tohoku University, Sendai 980-8579, Japan
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Teramoto Akinobu
New Industry Creation Hatchery Center, Tohoku University, 6-6-10 Aza-Aoba, Aramaki, Aoba-ku, Sendai 980-8579, Japan
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Akinobu Teramoto
New Industry Creation Hatchery Center, Tohoku University, 6-6-10 Aza Aoba, Aramaki, Aoba-ku, Sendai 980-8579, Japan
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Gaubert Philippe
New Industry Creation Hatchery Center, Tohoku University, Sendai 980-8579, Japan
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Tadahiro Ohmi
New Industry Creation Hatchery Center, Tohoku University, 6-6-10 Aza Aoba, Aramaki, Aoba-ku, Sendai 980-8579, Japan
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Ohmi Tadahiro
New Industry Creation Hatchery Center, Tohoku University, 6-6-10 Aza-Aoba, Aramaki, Aoba-ku, Sendai 980-8579, Japan
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Li Xiang
Graduate School of Engineering, Tohoku University, 6-6-10 Aza-Aoba, Aramaki, Aoba-ku, Sendai 980-8579, Japan
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Konda Masahiro
New Industry Creation Hatchery Center, Tohoku University, 6-6-10 Aza-Aoba, Aramaki, Aoba-ku, Sendai 980-8579, Japan
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Hasebe Rui
New Industry Creation Hatchery Center, Tohoku University, 6-6-10 Aza-Aoba, Aramaki, Aoba-ku, Sendai 980-8579, Japan
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OHMI Tadahiro
New Industry Creation Hatchery Center, Tohoku University:WPI Research Center, Tohoku University
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Suwa Tomoyuki
New Industry Creation Hatchery Center, Tohoku University, 6-6-10 Aza-Aoba, Aramaki, Aoba-ku, Sendai 980-8579, Japan
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Tetsuya Goto
New Industry Creation Hatchery Center, Tohoku University, Sendai 980-8579, Japan
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Nakao Yukihisa
Graduate School of Engineering, Tohoku University, 6-6-10 Aza-Aoba, Aramaki, Aoba-ku, Sendai 980-8579, Japan
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Nakao Yukihisa
Graduate School of Engineering, Tohoku University, Sendai 980-8579, Japan
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Hiroaki Tanaka
New Industry Creation Hatchery Center, Tohoku University, Sendai 980-8579, Japan
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Tatsunori Isogai
Graduate School of Engineering, Tohoku University, Sendai 980-8579, Japan
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Isogai Tatsunori
Graduate School of Engineering, Tohoku University, Sendai 980-8579, Japan
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Isogai Tatsunori
Graduate School of Engineering, Tohoku University, 6-6-10 Aza-Aoba, Aramaki, Aoba-ku, Sendai 980-8579, Japan
著作論文
- High Current Drivability FD-SOI CMOS with Low Source/Drain Series Resistance(Session 9B : Nano-Scale devices and Physics)
- High Current Drivability FD-SOI CMOS with Low Source/Drain Series Resistance(Session 9B : Nano-Scale devices and Physics)
- Low contact resistivity with low silicide/p[+]-silicon Schottky barrier for high-performance p-channel metal-oxide-silicon field effect transistors (Special issue: Solid state devices and materials)
- Impact of tungsten capping layer on yttrium silicide for low-resistance n[+]-source/drain cont (Special issue: Solid state devices and materials)
- Formation and property of yttrium and yttrium silicide films as low Schottky barrier material for n-type silicon (Special issue: Solid state devices and materials)
- Low Contact Resistance with Low Schottky Barrier for N-type Silicon Using Yttrium Silicide
- Very low bit error rate in flash memory using tunnel dielectrics formed by Kr/O2/NO plasma oxynitridation (Special issue: Solid state devices and materials)
- Very Low Bit Error Rate in Flash Memory using Tunnel Dielectrics formed by Kr/O_2/NO Plasma Oxynitridation
- Analysis of the Low-Frequency Noise Reduction in Si(100) Metal--Oxide--Semiconductor Field-Effect Transistors
- Complementary Metal–Oxide–Silicon Field-Effect-Transistors Featuring Atomically Flat Gate Insulator Film/Silicon Interface
- Impact of Tungsten Capping Layer on Yttrium Silicide for Low-Resistance n+-Source/Drain Contacts
- Low Contact Resistivity with Low Silicide/p+-Silicon Schottky Barrier for High-Performance p-Channel Metal–Oxide–Silicon Field Effect Transistors