Impact of Tungsten Capping Layer on Yttrium Silicide for Low-Resistance n+-Source/Drain Contacts

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概要

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• In order to form a stable silicide having a low Schottky barrier height (SBH) for electrons, we employed a tungsten (W) capping layer on yttrium (Y) and investigated its physical and electrical properties. Our experimental results show that W can effectively protect against Y oxidation during silicidation. The Schottky barrier diode fabricated on p-type Si shows excellent properties, such as a near-ideal $n$-value of 1.02 and a very low reverse-biased current of $3.87\times 10^{-7}$ A/cm2, corresponding to a high SBH for holes of 0.767 eV. Also, the Schotky barrier diode fabricated on n-type Si shows a SBH for electrons of as low as 0.311 eV. We also confirm that the W capping layer can be applied to other rare-earth metals. The technology developed in this work is applied to silicide formation with no oxygen contamination to realize low-resistance source/drain contacts, which will improve the performance of metal–insulator–semiconductor field-effect transistors (MISFETs).

• 2009-04-25

著者

• Tanaka Hiroaki

  New Industry Creation Hatchery Center Tohoku University

• Goto Tetsuya

  New Industry Creation Hatchery Center Tohoku University

• Sugawa Shigetoshi

  Graduate School Of Engineering Tohoku University

• Isogai Tatsunori

  Graduate School Of Engineering Tohoku University

• Ohmi Tadahiro

  New Industry Creation Hatchery Center (niche) Tohoku University

• Teramoto Akinobu

  New Industry Creation Hatchery Center (NICHe), Tohoku University, Sendai 980-8579, Japan

• Isogai Tatsunori

  Graduate School of Engineering, Tohoku University, Sendai 980-8579, Japan

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