A Study on Very High Performance Novel Balanced Fully Depleted Silicon-on-Insulator Complementary Metal–Oxide–Semiconductor Field-Effect Transistors on Si(110) Using Accumulation-Mode Device Structure for Radio-Frequency Analog Circuits

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概要

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• In this study, a very high performance novel balanced complementary metal–oxide–semiconductor (CMOS) has been successfully developed on the Si(110) surface by introducing the accumulation-mode (AM) device structure at the first time. The novel balanced CMOS consists of an AM n-MOSFET and an inversion-mode (IM) p-MOSFET based on the different performances of the AM n- and p-MOSFETs, and the mechanism has been revealed. The advanced characteristics of this novel balanced CMOS transistor on Si(110) surface have also been investigated for the first time. In this paper, we experimentally demonstrate the possibility of realizing a very high performance CMOS with larger current drivability in both the n- and p-MOSFETs on Si(110) than that in conventional CMOS on Si(100). Ideal inverter characteristics have been observed in this balanced CMOS on Si(110) with only half the occupancy area of the conventional CMOS on Si(100). In addition, $1/ f$ noise in an AM n-MOSFET on Si(110) has been investigated and an obvious suppression has been confirmed in both the linear and saturation operation regions.

• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
• 2009-04-25

著者

• Kuroda Rihito

  Graduate School Of Engineering Tohoku University

• Cheng Weitao

  New Industry Creation Hatchery Center Tohoku University

• Sugawa Shigetoshi

  Graduate School Of Engineering Tohoku University

• Ohmi Tadahiro

  New Industry Creation Hatchery Center (niche) Tohoku University

• Teramoto Akinobu

  New Industry Creation Hatchery Center (NICHe), Tohoku University, Sendai 980-8579, Japan

• Tye ChingFoa

  Graduate School of Engineering, Tohoku University, 6-6-10 Aza-Aoba, Aramaki, Aoba-ku, Sendai 980-8579, Japan

• Cheng Weitao

  New Industry Creation Hatchery Center, Tohoku University, 6-6-10 Aza-Aoba, Aramaki, Aoba-ku, Sendai 980-8579, Japan

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