Carrier mobility characteristics of (100), (110), and (551) oriented atomically flattened Si surfaces for fin structure design of multi-gate metal–insulator–silicon field-effect transistors
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- 論文の詳細を見る
- Institute of Physicsの論文
- 2014-02-07
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- Carrier mobility characteristics of (100), (110), and (551) oriented atomically flattened Si surfaces for fin structure design of multi-gate metal–insulator–silicon field-effect transistors