On the Interface Flattening Effect and Gate Insulator Breakdown Characteristic of Radical Reaction Based Insulator Formation Technology

概要

論文の詳細を見る
Insulator/Si interface flattening effects and gate oxide breakdown characteristics are evaluated for the oxygen radical oxidation and the wet oxidation at 750 °C. The radical oxidation is confirmed to exhibit a superior flattening effect than the wet oxidation. To obtain atomically flat top surface and interface to Si for oxides, radical oxidation on atomically flattened surfaces is indispensable. When the oxides are formed by radical oxidation on conventional flat Si surfaces with R_{\text{a}}\geq 0.12 nm, early breakdowns occur more frequently than wet oxides. These early breakdowns are eliminated when surfaces with R_{\text{a}}\leq 0.06 nm are employed before oxidation. It is suggested that the early breakdowns occur at local spots that induce excess electric field due to the flattening of micro-roughness by the radical oxidation. To apply the radical reaction based insulator formation technology to the gate insulator formation, the surface before gate insulator formation must be sufficiently flattened.
Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
2012-02-25