High-Integrity Silicon Oxide Grown at Low-Temperature by Atomic Oxygen Generated in High-Density Krypton Plasma

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概要

• 論文の詳細を見る
• 1999-09-20

著者

• OHMI Tadahiro

  New Industry Creation Hatchery Center, Tohoku University

• Saito Yuji

  Department Of Electronic Engineering Graduate School Of Engineering Tohoku University

• SEKINE Katsuyuki

  Department of Electronic Engineering, Graduate school of Engineering, Tohoku University

• HIRAMAYA Masaki

  Department of Electronic Engineering, Graduate School of Engineering, Tohoku University

• Saito Y

  Department Of Electrical And Electronic Engineering Faculty Of Engineering Mie University

• HIGUCHI Masaaki

  TOSHIBA CORPORATION

• HIRAYAMA Masaki

  New Industry Creation Hatchery Center, Tohoku University

• Hirayama Masaki

  Toshiba Corporation

• Ohmi Tadahiro

  New Industry Creation Hatchery Center Future Information Industry Creation Center Tohoku University

• Hirayama M

  Tohoku Univ. Sendai Jpn

• Saito Yuji

  Department Of Anesthesiology Gunma Prefectural Cardiovascular Center

• Sekine K

  Japan Aviation Electronics Ind. Ltd. Tokyo Jpn

• Sekine Katsuyuki

  Department Of Electronic Engineering Faculty Of Engineering Tohoku University

• Ohmi Tadahiro

  New Industry Creation Hatchery Center (niche) Tohoku University

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