Nitrogen Profile Study for SiON Gate Dielectrics of Advanced DRAM

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概要

• 論文の詳細を見る
• 2007-09-19

著者

• TERAMOTO Akinobu

  New Industry Creation Hatchery Center, Tohoku University

• OHMI Tadahiro

  New Industry Creation Hatchery Center, Tohoku University

• Teramoto A

  New Industry Creation Hatchery Center Tohoku University

• Tanaka Yoshitsugu

  Tokyo Electron Ltd. Tokyo Jpn

• Sugawa S

  Graduate School Of Engineering Tohoku University

• Ohmi T

  Tohoku Univ. Sendai‐shi Jpn

• SUGAWA Sigetoshi

  Tohoku University

• Akasaka Yasushi

  Tokyo Electron Ltd. Tokyo Jpn

• MURAKAWA Shigemi

  Tokyo Electron Ltd.

• TAKEUCHI Masashi

  Tokyo Electron AT Ltd.

• HONDA Minoru

  Tokyo Electron AT Ltd.

• ISHIZUKA Shu-ichi

  Tokyo Electron AT Ltd.

• NAKANISHII Toshio

  Tokyo Electron AT Ltd.

• HIROTA Yoshihiro

  Tokyo Electron AT Ltd.

• SUGAWARA Takuya

  Tokyo Electron Ltd.

• SUGAWA Shigetoshi

  Tokyo Electron AT Ltd.

• Teramoto Akinobu

  New Industry Creation Hatchery Center Tohoku University

• Teramoto Akinobu

  Department Of Electronic Engineering Faculty Of Engineering Tohoku University

• Sugawa Shigetoshi

  Graduate School Of Engineering Tohoku University

• Sugawa Shigetoshi

  Department Of Electronic Engineering Tohoku University

• Ohmi Tadahiro

  New Industry Creation Hatchery Center Future Information Industry Creation Center Tohoku University

• Nakanishi Toshio

  Tokyo Electron At Ltd. Hyogo Jpn

• Teramoto Akinobu

  New Industry Creation Hatchery Center Tohoku Univ.

• Akasaka Yasushi

  Tokyo Electron Ltd.

• Teramoto Akinobu

  University Of Tohoku New Industry Creation Hatchery Center (niche)

• Ohmi Tadahiro

  New Industry Creation Hatchery Center (niche) Tohoku University

• Tanaka Yoshitsugu

  Tokyo Electron Ltd.

• Teramoto Akinobu

  New Industry Creation Hatchery Center (NICHe), Tohoku University, Sendai 980-8579, Japan

• Sugawara Takuya

  Tokyo Electron AT Ltd., Technology Development Center, 650, Hosaka-cho Mitsuzawa, Nirasaki, Yamanashi 407-0192, Japan

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