Low-Temperature Formation of Silicon Nitride Film by Direct Nitridation Employing High-Density and Low-Energy Ion Bombardment
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1999-04-30
著者
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OHMI Tadahiro
New Industry Creation Hatchery Center, Tohoku University
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Saito Yuji
Department Of Electronic Engineering Graduate School Of Engineering Tohoku University
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HIRAYAMA Masaki
Department of Electronic Engineering, Graduate School of Engineering, Tohoku University
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SEKINE Katsuyuki
Department of Electronic Engineering, Graduate school of Engineering, Tohoku University
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HIGUCHI Masaaki
TOSHIBA CORPORATION
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HIRAYAMA Masaki
New Industry Creation Hatchery Center, Tohoku University
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Hirayama Masaki
Toshiba Corporation
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Hirayama Masaki
Department Of Electronic Engineering Faculty Of Engineering Tohoku University
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Ohmi Tadahiro
New Industry Creation Hatchery Center Future Information Industry Creation Center Tohoku University
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Saito Yuji
Department Of Anesthesiology Gunma Prefectural Cardiovascular Center
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Sekine K
Japan Aviation Electronics Ind. Ltd. Tokyo Jpn
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Sekine Katsuyuki
Department Of Electronic Engineering Faculty Of Engineering Tohoku University
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Ohmi Tadahiro
New Industry Creation Hatchery Center (niche) Tohoku University
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