Ohmi Tadahiro | New Industry Creation Hatchery Center Future Information Industry Creation Center Tohoku University
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関連著者
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Ohmi Tadahiro
New Industry Creation Hatchery Center Future Information Industry Creation Center Tohoku University
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OHMI Tadahiro
New Industry Creation Hatchery Center, Tohoku University
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SUGAWA Sigetoshi
Tohoku University
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Sugawa Shigetoshi
Graduate School Of Engineering Tohoku University
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TERAMOTO Akinobu
New Industry Creation Hatchery Center, Tohoku University
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Teramoto Akinobu
New Industry Creation Hatchery Center Tohoku University
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Sugawa Shigetoshi
Department Of Electronic Engineering Tohoku University
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Sugawa S
Graduate School Of Engineering Tohoku University
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HIGUCHI Masaaki
TOSHIBA CORPORATION
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Teramoto Akinobu
Department Of Electronic Engineering Faculty Of Engineering Tohoku University
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Hirayama Masaki
Toshiba Corporation
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HIRAYAMA Masaki
New Industry Creation Hatchery Center, Tohoku University
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Ohmi T
Tohoku Univ. Sendai‐shi Jpn
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Kotani Koji
Graduate School Of Engineering Tohoku University
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SUGAWA Shigetoshi
Graduate School of Engineering, Tohoku University
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Kotani K
Department Of Electronic Engineering Graduate School Of Engineering Tohoku University
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Teramoto A
New Industry Creation Hatchery Center Tohoku University
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Kotani Koji
Laboratory For Electronic Intelligent Systems Research Institute Of Electrical Communication Tohoku
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Kotani K
Tohoku Univ. Sendai‐shi Jpn
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Kotani Koji
Department Of Electronic Engineering Graduate School Of Engineering Tohoku University
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Pan Z
New Industry Creation Hatchery Center Tohoku University
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Hirayama Masaki
New Industry Creation Hatchery Center Tohoku University
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大見 忠弘
東北大学
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Ohmi Tadahiro
Department Of Electronic Engineering Tohoku University
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Ohmi Tadahiro
The New Industry Creation Hatchery Center (niche) Tohoku University
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PAN Zhibin
New Industry Creation Hatchery Center, Tohoku University
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Pan Zhibin
New Industry Creation Hatchery Center Tohoku University
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Saito Yuji
Department Of Electronic Engineering Graduate School Of Engineering Tohoku University
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SUGAWA Shigetoshi
Department of Electronic Engineering, Graduate School of Engineering, Tohoku University
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Teramoto Akinobu
Tohoku Univ. Sendai Jpn
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寺本 章伸
東北大学未来科学技術共同研究センター
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大見 忠弘
東北大学未来科学技術共同研究センター
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大見 忠弘
東北大学未来科学技術共同研究センター:東北大学wpiリサーチセンター
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AHARONI Herzl
New Industry Creation Hatchery Center, Tohoku University
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Saito Y
Department Of Electrical And Electronic Engineering Faculty Of Engineering Mie University
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Ohmi T
Tohoku Univ. Sendai Jpn
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NAKAO Shin-ichi
Department of Chemical System Engineering, Faculty of Engineering, The University of Tokyo
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Nakao Shin-ichi
Department Of Chemical Engineering Faculty Of Engineering University Of Tokyo
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HIRAYAMA Masaki
Department of Electronic Engineering, Graduate School of Engineering, Tohoku University
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SEKINE Katsuyuki
Department of Electronic Engineering, Graduate school of Engineering, Tohoku University
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Cheng Weitao
New Industry Creation Hatchery Center Tohoku University
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Hirayama Masaki
Department Of Electronic Engineering Faculty Of Engineering Tohoku University
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野平 博司
Musashi Institute Of Technology
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Ohshima Ichiro
Dept. Of E/e Tohoku University
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Ohmi Tadahiro
Department Of Electronic Engineering Graduate School Of Engineering Tohoku University:(present Addre
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Ohshima Ichiro
Department Of Electronic Engineering Graduate School Of Engineering Tohoku University
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SUWA Tomoyuki
New Industry Creation Hatchery Center, Tohoku University
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Goto Tetsuya
New Industry Creation Hatchery Center Tohoku University
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ISOGAI Tatsunori
Graduate School of Engineering, Tohoku University
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Nohira Hiroshi
Faculty Of Engineering Musashi Institute Of Technology
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大見 忠弘
東北大学 未来科学技術共同研究センター
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斎藤 弥八
名大院工
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IMAI Hiroshi
Graduate School of Science and Engineering, Kagoshima University
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KURODA Rihito
Graduate School of Engineering, Tohoku University
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TANAKA Hiroaki
New Industry Creation Hatchery Center, Tohoku University
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Kuroda Rihito
Graduate School Of Engineering Tohoku University
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Tanaka Hiroaki
New Industry Creation Hatchery Center Tohoku University
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Saito Yahachi
Department Of Applied Physics Faculty Of Engineering Nagoya Universtiy
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Hattori Tetsuya
Depaetment Of Electrical And Electronic Engineering Tokyo Institute Of Technology
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Nakao Shin-ichi
Department Of Electronic Engineering Graduate School Of Engineering Tohoku University
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HAMADA Tatsufumi
Department of Electronic Engineering, Graduate school of Engineering, Tohoku University
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HATTORI Takeo
New Industry Creation Hatchery Center, Tohoku University
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Hattori Takashi
Central Research Laboratory Hitachi Ltd.
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Watabe Shunichi
Graduate School of Engineering, Tohoku University
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INOKUCHI Atsutoshi
New Industry Creation Hatchery Center, Tohoku University
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Inokuchi Atsutoshi
New Industry Creation Hatchery Center Tohoku University
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Hattori T
New Industry Creation Hatchery Center Tohoku University
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大川 猛
(独)産業技術総合研究所情報技術研究部門
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斎藤 弥八
名大工
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Imai Makoto
Department of Cardiology, Kansai Electric Power Hospital
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Numata Masashi
Department Of Electronic Engineering Graduate School Of Engineering Tohoku University:laboratory For
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Numata Masashi
Department Of Electronic Engineering Graduate School Of Engineering Tohoku University
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IKENAGA Eiji
Japan Synchrotron Radiation Research Institute/SPring-8
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Pan Zhibin
Department of electronic engineering, graduate school of engineering, Tohoku university
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Pan Zhibin
Department Of Electronic Engineering Graduate School Of Engineering Tohoku University
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Ohmi Tadahiro
New Industry Creation Hatchery Center Tohoku University
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Saito Yahachi
Institute For Materials Research (imr) Tohoku University
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大川 猛
東北大学大学院工学研究科
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大川 猛
National Institute For Advanced Industrial Science And Technology (aist):information Technology Rese
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Ohkawa Takeshi
Department Of Electronic Engineering Tohoku University
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Ikenaga Eiji
Japan Synchrotron Radiation Research Institute
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Nakao Shin-ichi
Department Of Electronic Engineering Graduate School Of Engineering Tohoku University:laboratory For
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SUGAWA Shigetoshi
New Industry Creation Hatchery Center, Tohoku University
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UEDA Naoki
Process Development Laboratory, Sharp Corporation
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YAMAUCHI Yoshimitsu
Process Development Laboratory, Sharp Corporation
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OHTSUBO Kazuo
Department of Electronic Engineering, Graduate school of Engineering, Tohoku University
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HIRAMAYA Masaki
Department of Electronic Engineering, Graduate School of Engineering, Tohoku University
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USHIKI Takeo
New Industry Creation Hatchery Center, Tohoku University
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MIYAMOTO Naoto
Department of Electronic Engineering, Graduate School of Engineering, Tohoku University
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ARATANI Takashi
Shin-Etsu Chemical Co., Ltd.
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USHIO Jiro
Hitachi, Ltd.
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NOHIRA Hiroshi
Musashi Institute of Technology
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Morimoto A
Kanazawa Univ. Kanazawa Jpn
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SUGAWARA Hiroshi
Department of Dermatology and Clinical Research Institute, National Sapporo Hospital
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Sugawara Hiroshi
Department Of Electronic Engineering Graduate School Of Engineering Tohoku University
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SHIMADA Hiroyuki
New Device Development Group, SEIKO EPSON Corporation
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Abe Kenichi
Graduate School of Engineering, Tohoku University
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Fujisawa Takafumi
Graduate School of Engineering, Tohoku University
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Sugimura Masahiko
Research and Development Center, Zeon Corporation
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Kawasaki Masafumi
Research and Development Center, Zeon Corporation
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Sugimura Masahiko
Research And Development Center Zeon Corporation
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Terasaki Masato
Tokyo Electron Ltd.
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ASAHARA Hirokazu
New Industry Creation Hatchery Center, Tohoku University
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Tajima Yoshinori
Central Research Laboratories Organo Corporation
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Ueda Naoki
Process Development Laboratory Sharp Corporation
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Ushio Jiro
Hitachi Ltd.
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Imai Makoto
Department Of Cardiology Kansai Electric Power Hospital
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Imai Makoto
Department Of Electronic Engineering Tohoku University
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GAUBERT Philippe
New Industry Creation Hatchery Center, Tohoku University
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SHIBATA Tadashi
Department of Physics,Faculty of Science,Osaka University
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SHIMADA Hiroyuki
Department of Ophthalmology, School of Medicine, Nihon University
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Takahashi K
Department Of Physical Electronics Tokyo Institute Of Technology
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Takahashi K
National Inst. Res. In Inorganic Materials Ibaraki Jpn
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NAKAMURA Osamu
Department of Radiological Technology, Faculty of Health Sciences, Nihon Institute of Medical Scienc
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Kotani Koji
Faculty of Environment and Information Sciences, Yokohama National University
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Shibata Tadashi
Department Of Information And Communication Engineering The University Of Tokyo
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Nakada A
Vlsi Design And Education Center The University Of Tokyo
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NAKANO Yukihisa
Graduate School of Engineering, Tohoku University
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Shibata T
Univ. Tokyo Tokyo Jpn
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Shibata T
Department Of Information And Communication Engineering The University Of Tokyo
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Tanaka Yoshitsugu
Tokyo Electron Ltd. Tokyo Jpn
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TAKAHASHI Kaoru
Department of Applied Physics, Tokyo University of Agriculture and Technology
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Maruo K
Advantest Laboratories Ltd.
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Maruo Kazuyuki
Advantest Laboratories Ltd.
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MORIMOTO Akihiro
Faculty of Science and Engineering, Ritsumeikan University
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KAWASE Kazumasa
Advanced Technology R&D Center, Mitsubishi Electric Corporation
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UMEDA Hiroshi
Process Development Dept., Wafer Process Engineering Development Div., LSI Manufacturing Unit, Renes
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INOUE Masao
Process Development Dept., Wafer Process Engineering Development Div., LSI Manufacturing Unit, Renes
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TSUJIKAWA Shimpei
Process Development Dept., Wafer Process Engineering Development Div., LSI Manufacturing Unit, Renes
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AKAMATSU Yasuhiko
Process Development Dept., Wafer Process Engineering Development Div., LSI Manufacturing Unit, Renes
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Hattori Takeo
Department of Electrical and Electronic Engineering, Musashi Institute of Technology
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Tye Ching
Graduate School Of Engineering Tohoku University
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NOHIRA Hiroshi
Department of Electrical and Electronic Engineering, Musashi Institute of Technology
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Nohira Hiroshi
Department Of Electrical And Electronic Engineering Musashi Institute Of Technology
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NAKADA Akira
VLSI Design and Education Center, The University of Tokyo
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KONDA Masahiro
Department of Electronic Engineering, Graduate School of Engineering, Tohoku University
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MORIMOTO Tatsuo
Department of Electronic Engineering, Graduate School of Engineering, Tohoku University
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YONEZAWA Takemi
Department of Electronic Engineering, Graduate School of Engineering, Tohoku University
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KANEMOTO Kei
Department of Electronic Engineering, Graduate School of Engineering, Tohoku University
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AHARONI Herzl
Department of Electronic Engineering, Faculty of Engineering, Tohoku University
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CHENG Weitao
New Industry Creation Hatchery Center, Tohoku University
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Shibata Tadashi
Department Of Electrical Engineering And Information Systems School Of Engineering The University Of
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NANBU Tetsuhiro
Department of Electronic Engineering, Graduate School of Engineering, Tohoku University
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Aharoni Herzl
東北大学未来科学技術共同研究センター
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Takahashi K
Department Of Physical Electronics Tokyo Institute Of Tecnology
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KAWAI Kunihiro
Dept. of E/E, Tohoku University
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KARNAN Leo
Department of Electronic Engineering, Graduate School of Engineering, Tohoku University
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Ohmi Tadahiro
Tohoku Univ. Sendai Jpn
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HAMADA Tatsufumi
Graduate School of Engineering, Tohoku University
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Akasaka Yasushi
Tokyo Electron Ltd. Tokyo Jpn
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TANAKA Hiroaki
Graduate School of Engineering, Tohoku University
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Takahashi K
Tokyo Inst. Technol. Yokohama Jpn
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Nakamura Tomohiro
Department of Internal Medicine, Saitama Medical Center, Jichi Medical University
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MURAKAWA Shigemi
Tokyo Electron Ltd.
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TAKEUCHI Masashi
Tokyo Electron AT Ltd.
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HONDA Minoru
Tokyo Electron AT Ltd.
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ISHIZUKA Shu-ichi
Tokyo Electron AT Ltd.
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NAKANISHII Toshio
Tokyo Electron AT Ltd.
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HIROTA Yoshihiro
Tokyo Electron AT Ltd.
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SUGAWARA Takuya
Tokyo Electron Ltd.
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SUGAWA Shigetoshi
Tokyo Electron AT Ltd.
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KONDA Masahiro
Graduate School of Engineering ,Department of Electronic Engineering, Tohoku University
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KONDA Masahiro
New Industry Creation Hatchery Center, Tohoku University
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TAKAHASHI Hiroto
Graduate School of Engineering Tohoku University
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KUMAGAI Yuki
Graduate School of Engineering Tohoku University
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FUJITA Genya
Graduate School of Engineering Tohoku University
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NAKAGAWA Munekatsu
Department of Electronic Engineering, Graduate School of Engineering, Tohoku University
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CHENG Weitao
Department of Electronic Engineering, Graduate School of Engineering, Tohoku University
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ONO Yasuhiro
New Device Development Group, SEIKO EPSON Corporation
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Nakano Yukihisa
Graduate School Of Engineering Tohoku University
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ISHIKAWA Hiraku
TOKYO ELECTRON LTD.
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NOZAWA Toshihisa
TOKYO ELECTRON LTD.
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MATSUOKA Takaaki
TOKYO ELECTRON LTD.
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ITO Takashi
Graduate School of Engineering, Tohoku University
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ITOH Azumi
New Industry Creation Hatchery Center, Tohoku University
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YASUDA Seiji
New Industry Creation Hatchery Center, Tohoku University
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Teramoto Akinobu
Ulsi Laboratory Mitsubishi Electric Corporation
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WATANABE Kazufumi
Graduate School of Engineering, Tohoku University
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TATE Tomoyasu
Graduate School of Engineering, Tohoku University
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CHIBA Koji
Graduate School of Engineering, Tohoku University
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TAKAHASHI Kazushi
Faculty of Electronic Engineering, Tohoku University
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SUGAWA Shigetoshi
Faculty of Electronic Engineering, Tohoku University
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MORIMOTO Akihiro
Department of Electronic Engineering, Tohoku University
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SUGAWA Sigetoshi
Department of Electronic Engineering, Graduate School of Engineering, Tohoku University
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Gaubert Philippe
New Industry Creation Hatchery Center Tohoku University
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Nakamura Tomohiro
Department Of General Education Osaka Institute Of Technology
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Takahashi Kensuke
Department Of Electrical And Electronic Engineering Musashi Institute Of Technology
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Takahashi Kuniharu
Graduate School Of Science And Technology Niigata University
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Takahashi Kazuhiko
National Research Institute For Metals Tsukuba Laboratories:sanyo Elect. Co. Ltd.
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Takahashi Kouchiro
National Institute For Research In Inorganic Materials
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Nakamura T
Department Of Electrical & Electronic Engineering Meljo University
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Ohmi Tadahiro
New Industry Creation Hatchery Center University Of Tohoku
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Ohmi Tadahiro
New Industry Creation Hatchery Center Tohoku University Fluctuation Free Facility (fff) For New Info
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Nakanishi Toshio
Tokyo Electron At Ltd. Hyogo Jpn
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WATANUKI Kohei
New Industry Creation Hatchery Center, Tohoku University
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TERASAKI Masato
New Industry Creation Hatchery Center, Tohoku University
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NAKAZAWA Hiroshi
New Industry Creation Hatchery Center, Tohoku University
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YAMANAKA Jiro
New Industry Creation Hatchery Center, Tohoku University
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Chiba Koji
Graduate School Of Engineering Tohoku University
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Karnan Leo
Department Of Electronic Engineering Graduate School Of Engineering Tohoku University
著作論文
- High Current Drivability FD-SOI CMOS with Low Source/Drain Series Resistance(Session 9B : Nano-Scale devices and Physics)
- Subvector-Based Fast Encoding Method for Vector Quantization Without Using Two Partial Variances
- Performance Comparison between Equal-Average Equal-Variance Equal-Norm Nearest Neighbor Search (EEENNS) Method and Improved Equal-Average Equal-Variance Nearest Neighbor Search (IEENNS) Method for Fast Encoding of Vector Quantization(Image Processing and
- Fast Encoding Method for Image Vector Quantization Based on Multiple Appropriate Features to Estimate Euclidean Distance
- A Fast Encoding Method for Vector Quantization Using Modified Memory-Efficient Sum Pyramid
- A Fast Search Method for Vector Quantization Using Enhanced Sum Pyramid Data Structure(Image)
- An Improved Fast Encoding Algorithm for Vector Quantization Using 2-Pixel-Merging Sum Pyramid and Manhattan-Distance-First Check(Image Processing, Image Pattern Recognition)
- A Fast Encoding Method for Vector Quantization Using L_1 and L_2 Norms to Narrow Necessary Search Scope(Image Processing, Image Pattern Recognition)
- A Fast Encoding Method for Vector Quantization Based on 2-Pixel-Merging Sum Pyramid Data Structure(Image)
- A nonlinear cepstral compensation method for noisy speech processing (音声言語情報処理 研究報告 第1回音声言語シンポジウム(SPLC))
- Extracting person's speech individually from original records of meeting by speaker identification technique
- Control of nitrogen profile in radical nitridation of SiO_2 films
- Fully-Parallel VLSI Implementation of Vector Quantization Processor Using Neuron-MOS Technology (Special Issue on Integrated Electronics and New System Paradigms)
- Impact of fully depleted silicon-on-insulator accumulation-mode CMOS on Si(110) (シリコン材料・デバイス)
- Performance Comparison of Ultra-thin FD-SOI Inversion-, Intrinsic- and Accumulation-Mode MOSFETs
- Highly Reliable MOS Trench Gate FET by Oxygen Radical Oxidation
- Improved J-E Characteristics and Stress Induced Leakage Currents (SILC) in Oxynitride Films Grown at 400℃ by Microwave-Excited High-Density Kr/O_2/NH_3 Plasma
- Low Temperature Gate Oxidation MOS Transistor Produced by Kr/O_2 Microwave Excited High-Density Plasma
- Ultra-Thin Silicon Oxynitride Film Grown at Low-Temperature by Microwave-Excited High-Density Kr/O_2/N_2 Plasma
- Ultra-Thin Silicon Oxynitride Films as Cu Diffusion Barrier for Lowering Interconnect Resistivity
- High-Integrity Silicon Oxide Grown at Low-Temperature by Atomic Oxygen Generated in High-Density Krypton Plasma
- Low-Temperature Formation of Silicon Nitride Film by Direct Nitridation Employing High-Density and Low-Energy Ion Bombardment
- Effect of in-situ Formed Interlayer at Ta-SiO_2 interface on Performance and Reliability in Ta-Gate MOS Devices
- A Fine-Grained Programmable Logic Module with Small Amount of Configuration Data for Dynamically Reconfigurable Field-Programmable Gate Array
- Study on Compositional Transition Layers at Gate Dielectrics/Si Interface by using Angle-resolved X-ray Photoelectron Spectroscopy
- Study on Compositional Transition Layers at Gate Dielectrics/Si Interface by using Angle-resolved X-ray Photoelectron Spectroscopy
- Thin and Low-Resistivity Tantalum Nitride Diffusion Barrier and Giant-Grain Copper Interconnects for Advanced ULSI Metallization
- Thin and Low-Resistivity Tantalum Nitride Diffusion Barrier and Giant-Grain Copper Interconnects for Advanced ULSI Metallization
- Nitrogen Profile Study for SiON Gate Dielectrics of Advanced DRAM
- Data Analysis Technique of Atomic Force Microscopy for Atomically Flat Silicon Surfaces
- Low Contact Resistance with Low Schottky Barrier for N-type Silicon Using Yttrium Silicide
- Very Low Bit Error Rate in Flash Memory using Tunnel Dielectrics formed by Kr/O_2/NO Plasma Oxynitridation
- PVD Tantalum Oxide with Buffer Silicon Nitride Stacked High-k MIS Structure Using Low Temperature and High Density Plasma Processing
- Improved Transconductance and Gate Insulator Integrity of MISFETs with Si_3N_4 Gate Dielectric Fabricated by Microwave-Excited High-Density Plasma at 400℃
- Low Resistivity PVD TaNx/Ta/TaNx Stacked Metal Gate CMOS Technology Using Self-Grown bcc-Phased Tantalum on TaNx Buffer Layer
- A Statistical Analysis of Distributions of RTS Characteristics by Wide-Range Sampling Frequencies
- A Statistical Analysis of Distributions of RTS Characteristics by Wide-Range Sampling Frequencies
- A Material of Semiconductor Package with Low Dielectric Constant, Low Dielectric Loss and Flat Surface for High Frequency and Low Power Propagation(Session2: Silicon Devices I)
- A Material of Semiconductor Package with Low Dielectric Constant, Low Dielectric Loss and Flat Surface for High Frequency and Low Power Propagation(Session2: Silicon Devices I)
- The Evaluation of New Amorphous Hydrocarbon Film aCHx, for Copper Barrier Dielectric Film in Low-k Copper Metallization
- Low Dielectric Constant Non-Porous Fluorocarbon Films for Inter-Layer Dielectric
- A Large-Signal MOSFET Model Based on Transient Carrier Response for RF Circuits
- A High S/N Ratio Object Extraction CMOS Image Sensor with Column Parallel Signal Processing
- Analysis of High-Speed Signal Behavior in a Miniaturized Interconnect(Special Issue on Advanced Sub-0.1μm CMOS Devices)
- Interconnect and Substrate Structure for High Speed Giga-Scale Integration
- Characterization of Zinc Oxide Films Grown by a Newly Developed Plasma Enhanced MOCVD Employing Microwave Excited High Density Plasma
- Damage-Free Microwave-Excited Plasma Contact Hole Etching without Carrier Deactivation at the Interface between Silicide and Heavily-Doped Si
- Influence of Interface Structure on Oxidation Rate of Silicon : Surfaces, Interfaces, and Films
- A Study on Reclaimed Photoresist Developer Using an Electrodialysis Method
- A Study on Reclaimed Photoresist Developer Using an Electrodialysis Method
- Manufacturing Process of Flat Display(Micro Mechanical Engineering)
- Sonoluminescence measurement of 1MHz ultrasonic cavitation and effect of dissolved gases
- Ultra-Shallow and Low-Leakage p^+n Junctions Formation by Plasma Immersion Ion Implantation (PIII) and Low-Temperature Post-Implantation Annealing
- A Dynamically Reconfigurable Processor with Multi-Mode Operation Based on Newly Developed Full-Adder/D-Flip-Flop Merged Module (FDMM)
- Impurity Measurement in Specialty Gases Using an Atmospheric Pressure Ionizaiton Mass Spectrometer with a Two-Compartment Ion Source
- Impurity Measurement in Specialty Gases Using Atmospheric Pressure Ionization Mass Spectrometer with Two Compartments Ion Source
- A New Two-Step Round Oxidation STI Technology for Highly Reliable Flash Memory
- Study of the Metal-Ferroelectric-Insulator-Si Structure Device Formation by Controlling Properties of High Frequency and Microwave Excited Plasma
- MFIS-structure Memory Device with High Quality Ferroelectric Sr_2(Ta_Nb_x)_2O_7 Formed by Physical Vapor Deposition and Oxygen Radical Treatment by Radical Oxygen Assisted Layer by Layer(ROALL) deposition
- A 100 MHz 7.84 mm^2 31.7 msec 439 mW 512-Point 2-Dimensional FFT Single-Chip Processor(Low-Power System LSI, IP and Related Technologies)
- Suppression of the low frequency noise level in (100) and (110) oriented silicon p-MOSFETs induced by an alkali-free cleaning process
- Eliminating Needless Calculations on Circuit Level : Most-Significant-Digit-First Digit-Serial Processing
- Fast Computational Architectures to Decrease Redundant Calculations : Eliminating Redundant Digit Calculation and Excluding Useless Data (Special Issue on Integrated Electronics and New System Paradigms)
- The Effect of Organic Contaminations Molecular Weights in the Cleanroom Air on MOS Devices Degradation - a Controlled laminar Air Flow Experiment
- The Effect of Organic Compounds Contamination on the Electrical Characteristics of Ultra-Thin Gate Oxide Films
- Technology of Ferroelectric Thin Film Formation with Large Coercive Field for Future Scaling Down of Ferroelectric Gate FET Memory Device
- A New Statistical Evaluation Method for the Variation of MOSFETs
- Low Leakage Current and Low Resistivity p^+n Diodes on Si(110) Fabricated by Ga^+/B^+ Combination I/I and Low Temperature Annealing
- Formation of Ferroelectric Sr_2(Ta_,Nb_x)_2O_7 Thin Film on Amorphous SiO_2 by Microwave-Excited Plasma Enhanced Metalorganic Chemical Vapor Deposition
- Impact of The Improved High Performance Si(110) Oriented MOSFETs by Using Accumulation-Mode Fully Depleted SOI Devices
- A Comparative Examination of Polyoxide Films Performance Grown by Conventional Dry Thermal (900℃) or Plasma Assisted (400℃) Oxidation Techniques
- Impact of High Performance Accumulation-Mode Fully Depleted SOI MOSFETs (先端デバイスの基礎と応用に関するアジアワークショップ(AWAD2005))
- Impact of High Performance Accumulation-Mode Fully Depleted SOI MOSFETs (先端デバイスの基礎と応用に関するアジアワークショップ(AWAD2005))
- Precise Control of Gas Concentration Ratio in Process Chamber : Instrumentation, Measurement, and Fabrication Technology
- Source/Drain Dopant Deactivation and Junction Degradation by Energetic Ions in Plasma Processes
- Dopant-Induced Defects Formed by Ion Implantation : Dopant Species Dependence
- Perfectly Etching Uniformity Control of Various Doped Oxide Films Using an Anhydrous HF Gas
- A12-081 MANUFACTURING PROCESS OF FLAT DISPLAY