KANEMOTO Kei | Department of Electronic Engineering, Graduate School of Engineering, Tohoku University

スポンサーリンク

概要

• KANEMOTO Keiの詳細を見る
• 同名の論文著者
• Department of Electronic Engineering, Graduate School of Engineering, Tohoku Universityの論文著者

関連著者

• KANEMOTO Kei

  Department of Electronic Engineering, Graduate School of Engineering, Tohoku University

• Kanemoto Kei

  Department Of Electronic Engineering Graduate School Of Engineering Tohoku University

• Nakada A

  Vlsi Design And Education Center The University Of Tokyo

• Ohmi Tadahiro

  Department Of Electronic Engineering Graduate School Of Engineering Tohoku University

• NAKADA Akira

  Department of Electronic Engineering, Graduate School of Engineering, Tohoku University

• Ohmi Tadahiro

  Department Of Electronic Engineering

• AHARONI Herzl

  New Industry Creation Hatchery Center, Tohoku University

• Aharoni Herzl

  東北大学未来科学技術共同研究センター

• Ohmi T

  Tohoku Univ. Sendai Jpn

• Aharoni Herzl

  New Industry Creation Hatchery Center Tohoku University

• Ohmi Tadahiro

  New Industry Creation Hatchery Center (niche) Tohoku University

• OHMI Tadahiro

  New Industry Creation Hatchery Center, Tohoku University

• OKA Mauricio

  Department of Electronic Engineering, Faculty of Engineering, Tohoku University

• TAMAI Yukio

  Department of Electronic Engineering, Faculty of Engineering, Tohoku University

• Oka Maurichio

  Department Of Electronic Engineering Faculty Of Engineering Tohoku University

• Ohmi Tadahiro

  New Industry Creation Hatchery Center Future Information Industry Creation Center Tohoku University

• Tamai Yukio

  Department Of Electronic Engineering Faculty Of Engineering Tohoku University

もっと見る 閉じる

著作論文

• Minimization of BF^+_2-Implantation Dose to Reduce the Annealing Time for Ultra-Shallow Source/Drain Junction Formation below 600℃
• Reduction of BF2+-Implantation Dose to Minimize the Annealing Time for Ultra-Shallow Source/Drain Junction Formation below 600℃
• Formation of Ultra-Shallow and Low-Leakage p^+n Junctions by Low-Temperature Post-Implantation Annealing
• Ultrashallow and Low-Leakage p^+n Junction Formation by Plasma Immersion Ion Implantation (PIII) and Low-Temperature Post-Implantation Annealing
• Ultra-Shallow and Low-Leakage p^+n Junctions Formation by Plasma Immersion Ion Implantation (PIII) and Low-Temperature Post-Implantation Annealing

スポンサーリンク